Programmable resistance memory on wide-bandgap semiconductor technologies

ABSTRACT

Programmable resistive memory can be integrated with wide-bandgap semiconductor devices on a wide-bandgap semiconductor, silicon, or insulator substrate. The wide-bandgap semiconductor can be group IV-IV, III-V, or II-VI crystal or compound semiconductor, such as silicon carbide or gallium nitride. The programmable resistive memory can be PCRAM, RRAM, MRAM, or OTP. The OTP element can be a metal, silicon, polysilicon, silicided polysilicon, or thermally insulated wide-bandgap semiconductor. The selector in a programmable resistive memory can be a MOS or diode fabricated by wide-bandgap semiconductor.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority benefit of U.S. Provisional PatentApplication No. 63/141,479, filed on Jan. 26, 2021 and entitled“PROGRAMMABLE RESISTANCE MEMORY ON WIDE-BANDGAP SEMICONDUCTORTECHNOLOGIES,” which is hereby incorporated herein by reference.

This application claims priority benefit of U.S. Provisional PatentApplication No. 63/155,269, filed on Mar. 1, 2021 and entitled“PROGRAMMABLE RESISTANCE MEMORY ON WIDE-BANDGAP SEMICONDUCTORTECHNOLOGIES,” which is hereby incorporated herein by reference.

BACKGROUND OF THE INVENTION

A programmable resistive device is generally referred to a device'sresistance states that may change after means of programming. Resistancestates can also be determined by resistance values. For example, aresistive device can be a One-Time Programmable (OTP) device, such as anelectrical fuse, and the programming means can apply a high voltage toinduce a high current to flow through the OTP element. When a highcurrent flows through an OTP element by turning on a program selector,the OTP element can be programmed, or burned into a high or lowresistance state (depending on either fuse or anti-fuse). Theprogrammable resistive device can also be referred to those devices thatcan be programmed into another state reversible and repetitively, suchas PCM, RRAM, or CBRAM, etc. The programmable resistive device can alsobe referred to those devices that can be programmed into another stateby conductive current in opposite directions, such as bipolar RRAM, orMRAM, etc.

An electrical fuse is a common OTP which is a programmable resistivedevice that can be constructed from a segment of interconnect, such aspolysilicon, silicided polysilicon, silicide, metal, metal alloy, orsome combination thereof. The metal can be aluminum, copper, or othertransition metals. One of the most commonly used electrical fuses is aCMOS gate, fabricated in silicided polysilicon, used as interconnect.The electrical fuse can also be one or more contacts or vias instead ofa segment of interconnect. A high current may blow the contact(s) orvia(s) into a very high resistance state. The electrical fuse can be ananti-fuse, where a high voltage makes the resistance lower, instead ofhigher. The anti-fuse can consist of one or more contacts or vias withan insulator in between. The anti-fuse can also be a CMOS gate coupledto a CMOS body with a thin gate oxide as insulator.

The programmable resistive device can be a reversible resistive devicethat can be programmed into a digital logic value “0” or “1”repetitively and reversibly. The programmable resistive device can befabricated from phase change material, such as Germanium(Ge),Antimony(Sb), and Tellurium(Te) with composition Ge₂Sb₂Te₅ (GST-225) orGeSbTe-like materials including compositions of Indium (In), Tin (Sn),or Selenium (Se). Another phase change material can include achalcogenide material such as AgInSbTe. The phase change material can beprogrammed into a high resistance amorphous state or a low resistancecrystalline state by applying a short and high voltage pulse or a longand low voltage pulse, respectively.

Another type of reversible resistive device is a class of memory calledResistive RAM (RRAM), which is a normally insulating dielectric, but canbe made conducting through filament, defects, metal migration, etc. Thedielectric can be binary transition metal oxides such as NiO or TiO2,perovskite materials such as Sr(Zr)TiO3 or PCMO, organic charge transfercomplexes such as CuTCNQ, or organic donor-acceptor systems such as AlAIDCN. As an example, RRAM can have cells fabricated from metal oxidesbetween electrodes, such as Pt/NiO/Pt, TiN/TiOx/HfO2/TiN, TiN/ZnO/Pt, orW/TiN/SiO2/Si, etc. The resistance states can be changed reversibly anddetermined by polarity, magnitude, duration, voltage/current-limit, orthe combinations thereof to generate or annihilate conductive filaments.Another programmable resistive device similar to RRAM is a ConductiveBridge RAM (CBRAM) that is based on electro-chemical deposition andremoval of metal ions in a thin solid-state electrolyte film. Theelectrodes can be an oxidizable anode and an inert cathode and theelectrolyte can be Ag- or Cu-doped chalcogenide glass such as GeSe,Cu2S, or GeS, etc. The resistance states can be changed reversibly anddetermined by polarity, magnitude, duration, voltage/current-limit, orcombinations thereof to generate or annihilate conductive bridges. Theprogrammable resistive device can also be an MRAM (Magnetic RAM) withcells fabricated from magnetic multi-layer stacks that construct aMagnetic Tunnel Junction (MTJ). In a Spin Transfer Torque MRAM(STT-MRAM) the direction of currents applied to an MTJ determinesparallel or anti-parallel states, and hence low or high resistancestates.

A conventional programmable resistive memory cell 10 is shown in FIG. 1.The cell 10 consists of a resistive element 11 and an NMOS programselector 12. The resistive element 11 is coupled to the drain of theNMOS 12 at one end, and to a high voltage V+at the other end. The gateof the NMOS 12 is coupled to a select signal (Sel), and the source iscoupled to a low voltage V−. When a high voltage is applied to V+ and alow voltage to V−, the resistive cell 10 can be programmed by raisingthe select signal (Sel) to turn on the NMOS 12. One of the most commonresistive elements is a silicided polysilicon, the same material andfabricated at the same time as a MOS gate. The size of the NMOS 12, asprogram selector, needs to be large enough to deliver the requiredprogram current for a few microseconds. The program current for asilicided polysilicon is normally between a few milliamps for a fusewith width of 40 nm to about 20 mA for a fuse with width about 0.6 um.As a result, the cell size of an electrical fuse using silicidedpolysilicon tends to be very large. The resistive cell 10 can beorganized as a two-dimensional array with all Sel's and V-'s in a rowcoupled as wordlines (WLs) and a ground line, respectively, and all V+'sin a column coupled as bitlines (BLs).

Another conventional programmable resistive device 20 for Phase ChangeMemory (PCM) is shown in FIG. 2(a). The PCM cell 20 has a phase changefilm 21 and a bipolar transistor 22 as program selector with P+ emitter23, N base 27, and P sub collector 25. The phase change film 21 iscoupled to the emitter 23 of the bipolar transistor 22 at one end, andto a high voltage V+at the other. The N type base 27 of bipolartransistor 22 is coupled to a low voltage V−. The collector 25 iscoupled to ground. By applying a proper voltage between V+ and V− for aproper duration of time, the phase change film 21 can be programmed intohigh or low resistance states, depending on voltage and duration.Conventionally, to program a phase-change memory to a high resistancestate (or reset state) requires about 3V for 50 ns and consumes about300 μA of current, or to program a phase-change memory to a lowresistance state (or set state) requires about 2V for 300 ns andconsumes about 100 μA of current.

FIG. 2(b) shows a cross section of a conventional bipolar transistor 22.The bipolar transistor 22 includes a P+ active region 23, a shallow Nwell 24, an N+ active region 27, a P type substrate 25, and a ShallowTrench Isolation (STI) 26 for device isolation. The P+ active region 23and N+ active region 27 couple to the N well 24 are the P and Nterminals of the emitter-base diode of the bipolar transistor 22, whilethe P type substrate 25 is the collector of the bipolar transistor 22.This cell configuration requires an N well 24 be shallower than the STI26 to properly isolate cells from each other and needs 3-4 more maskingsteps over the standard CMOS logic processes which makes it more costlyto fabricate.

Another programmable resistive device 20′ for Phase Change Memory (PCM)is shown in FIG. 2(c). The PCM cell 20′ has a phase change film 21′ anda diode 22′. The phase change film 21′ is coupled between an anode ofthe diode 22′ and a high voltage V+. A cathode of the diode 22′ iscoupled to a low voltage V−. By applying a proper voltage between V+ andV− for a proper duration of time, the phase change film 21′ can beprogrammed into high or low resistance states, depending on voltage andduration. The programmable resistive cell 20′ can be organized as a twodimensional array with all V−'s in a row coupled as wordline bars(WLBs), and all V+'s in a column coupled as bitlines (BLs). As anexample of use of a diode as program selector for each PCM cell as shownin FIG. 2(c), see Kwang-Jin Lee et al., “A 90 nm 1.8V 512 MbDiode-Switch PRAM with 266 MB/s Read Throughput,” InternationalSolid-State Circuit Conference, 2007, pp. 472-273. Though thistechnology can reduce the PCM cell size to only 6.8F² (F stands forfeature size), the diode requires very complicated process steps, suchas Selective Epitaxial Growth (SEG), to fabricate, which would be verycostly for embedded PCM applications.

FIGS. 3(a) and 3(b) show several embodiments of an electrical fuseelement 80 and 84, respectively, fabricated from an interconnect. Theinterconnect serves as a particular type of resistive element. Theresistive element has three parts: anode, cathode, and body. The anodeand cathode provide contacts for the resistive element to be connectedto other parts of circuits so that a current can flow from the anode tocathode through the body. The body width determines the current densityand hence the electro-migration threshold for a program current. FIG.3(a) shows a conventional electrical fuse element 80 with an anode 81, acathode 82, and a body 83. This embodiment has a large symmetrical anodeand cathode. FIG. 3(b) shows another conventional electrical fuseelement 84 with an anode 85, a cathode 86, and a body 87. Thisembodiment has an asymmetrical shape with a large anode and a smallcathode to enhance the electro-migration effect based on polarity andreservoir effects. The polarity effect means that the electro-migrationalways starts from the cathode. The reservoir effect means that asmaller cathode makes electro-migration easier because the smaller areahas lesser ions to replenish voids when the electro-migration occurs.The fuse elements 80, 84 in FIGS. 3(a) and 3(b) are relatively largestructures which makes them unsuitable for some applications.

FIGS. 4(a) and 4(b) show programming a conventional MRAM cell 210 intoparallel (or state 0) and anti-parallel (or state 1) by currentdirections. The MRAM cell 210 consists of a Magnetic Tunnel Junction(MTJ) 211 and an NMOS program selector 218. The MTJ 211 has multiplelayers of ferromagnetic or anti-ferromagnetic stacks with metal oxide,such as Al₂O₃ or MgO, as an insulator in between. The MTJ 211 includes afree layer stack 212 on top and a fixed layer stack 213 underneath. Byapplying a proper current to the MTJ 211 with the program selector CMOS218 turned on, the free layer stack 212 can be aligned into parallel oranti-parallel to the fixed layer stack 213 depending on the currentflowing into or out of the fixed layer stack 213, respectively. Thus,the magnetic states can be programmed and the resultant states can bedetermined by resistance values, lower resistance for parallel andhigher resistance for anti-parallel states. The resistances in state 0or 1 are about 5KC) or 10KΩ, respectively, and the program currents areabout +/−100-200 μA. One example of programming an MRAM cell isdescribed in T. Kawahara, “2 Mb Spin-Transfer Torque RAM with Bit-by-BitBidirectional Current Write and Parallelizing-Direction Current Read,”International Solid-State Circuit Conference, 2007, pp. 480-481.

SUMMARY

Programmable resistive memory can be fabricated with wide-bandgapsemiconductor on their own natural crystal structure, silicon, orinsulator substrate. The wide-bandgap semiconductor can be group IVsemiconductor compound such as silicon carbine (SiC), or III-Vsemiconductor compound, such as Gallium Nitride (GaN). Programmableresistive memory can also be fabricated with the other II-IVsemiconductor compound that has bandgap similar to that of silicon, suchas Tin selenide (SnGe). The wide bandgap semiconductors are differentfrom the group IV silicon semiconductor with about 3× of bandgap, 10× ofbreakdown voltage, 2× of mobility that can operate in high voltage, hightemperature, and high frequency for power applications. The devices madeof wide-bandgap semiconductor can be Schottky Barrier Diode (SBD), P-I-Ndiode, MOSFET, MESFET, IGBT, or bipolar, similar to the silicon devices.

The invention can be implemented in numerous ways, including as amethod, system, device, or apparatus (including graphical user interfaceand computer readable medium). Several embodiments of the invention arediscussed below.

As a programmable resistive memory integrated with at least onewide-bandgap semiconductor device on the same chip, one embodiment can,for example, include at least a plurality of programmable resistivecells, and at least one of the cells includes at least: a programmableresistive element (PRE) having one end coupled to a first supply voltageline; a selector having at least a first active region and a secondactive region, where the first active region having a first type ofdopant and a second active region having a first or a second type ofdopant, the first active region providing a first terminal of theselector, the second active region providing a second terminal of theselector, both the first and second active regions built bysemiconductor material on a semiconductor, or insulator substrate, thefirst active region coupled to the PRE and the second active regioncoupled to a second supply voltage line; and a gate fabricated on thelayer of semiconductor material with a sandwich of dielectric inbetween; the gate coupled to a third supply voltage line that cancontrol conductivity between the first and the second active region. ThePRE can be configured to be programmable by applying voltages to thefirst, second, and/or the third supply voltage lines to thereby changeits logic state. The semiconductor material can be a wide-bandgapsemiconductor.

As an electronics system, one embodiment can, for example, include atleast a circuit block fabricated with wide-bandgap semiconductor, and aprogrammable resistive memory operatively connected to the processor,the programmable resistive memory including a plurality of programmableresistive cells. At least one of the cells can include, at least: aprogrammable resistive element (PRE) having one end coupled to a firstsupply voltage line; a selector having at least a first active regionand a second active region, where the first active region having a firsttype of dopant and a second active region having a first or a secondtype of dopant, the first active region providing a first terminal ofthe selector, the second active region providing a second terminal ofthe selector, both the first and second active regions built bysemiconductor material on a semiconductor, or an insulator substrate,the first active region coupled to the PRE and the second active regioncoupled to a second supply voltage line; and a gate fabricated on thelayer of semiconductor material with a sandwich of dielectric inbetween, the gate coupled to a third supply voltage line to control theconductivity between the first and the second active region. The PRE canbe configured to be programmable by applying voltages to the first,second, and/or the third supply voltage lines to thereby change itslogic state. The semiconductor material can be a wide-bandgapsemiconductor.

As a method for operating a programmable resistive memory integratedwith a wide bandgap semiconductor, one embodiment of the method caninclude at least: providing a plurality of programmable resistive cells,at least one of the programmable resistive cells includes at least (i) aprogrammable resistive element having one end coupled to a first supplyvoltage line; and (ii) a selector having at least one first activeregion and a second active region, where the first active region havinga first type of dopant and the second region having a first or a secondtype of dopant, both the first and second active regions beingfabricated by a semiconductor material on a semiconductor or insulatorsubstrate, the first active region coupled to the OTP element, and thesecond active region coupled to a second supply voltage line, (iii) agate fabricated on the semiconductor material with a sandwich ofdielectric in between, the gate coupled to a third supply voltage tocontrol the conductivity between the first and the second activeregions; and programming a logic state into at least one of theprogrammable resistive cells by applying voltages to the first, thesecond, and/or the third voltage lines. The semiconductor material canbe a wide-bandgap semiconductor.

The above and other features will be presented in more detail in thefollowing detailed description and the associated figures. Other aspectsand advantages will become apparent from the following detaileddescription, taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be readily understood by the followingdetailed descriptions in conjunction with the accompanying drawings,wherein like reference numerals designate like structural elements, andin which:

FIG. 1 shows a conventional programmable resistive memory cell.

FIG. 2(a) shows another conventional programmable resistive device forPhase Change Memory (PCM) using bipolar transistor as program selector.

FIG. 2(b) shows a cross section of a conventional Phase Change Memory(PCM) using bipolar transistor as program selector.

FIG. 2(c) shows another conventional Phase Change Memory (PCM) cellusing diode as program selector.

FIGS. 3(a) and 3(b) show several embodiments of an electrical fuseelement, respectively, fabricated from an interconnect.

FIGS. 4(a) and 4(b) show programming a conventional MRAM cell intoparallel (or state 0) and anti-parallel (or state 1) by currentdirections.

FIG. 5(a) shows a block diagram of a memory cell using a junction diodeaccording to one embodiment.

FIG. 5(a 1) shows I-V characteristics of programming an electrical fusereliably according to one embodiment.

FIG. 5(a 1 a) shows a scanning electronic microscope (SEM) photo ofelectrical fuses with some programmed below a critical current accordingto one embodiment.

FIG. 5(a 1 b) shows a typical cell current distribution of programmingelectrical fuses.

FIG. 5(a 1 c) shows a cell current distribution by programming cellslightly to enhance data security according to one embodiment.

FIG. 5(a 1 d) shows a cell current distribution by programming“unprogrammed” cells lightly to enhance data security according toanother embodiment.

FIG. 5(a 1 e) shows an address map where about enhancing data securitycan be applied to only a few lines of code and still be very effective.

FIG. 5(a 1 f) shows a block diagram of scramble the program pad VDDPcurrent to prevent cell current from be detected according to oneembodiment.

FIG. 5(a 2 a) shows a portion of a block diagram of using a voltageregulator to limit an OTP internal program voltage supply according toone embodiment.

FIG. 5(a 2 b) shows a portion of a block diagram of using a currentregulator to limit an OTP programming current according to anotherembodiment.

FIG. 5(a 2 c) shows a portion of a block diagram of an OTP macro toillustrate low-voltage concurrent program and read.

FIG. 5(a 2 d) shows a portion of a block diagram of an OTP macro with aresistor to external power supply, as an example to illustrateconcurrent low-voltage write and read.

FIG. 5(a 2 e) shows a portion of schematics of an OTP program and sensecircuits, as an example to illustrate concurrent low-voltage write andread.

FIG. 5(a 2 f) shows a plot of external supply VPP to flip the cell datawith cell resistance Rc, as an example to illustrate concurrent lowvoltage write read (CLVWR).

FIG. 5(b) shows a cross section of junction diodes as program selectorwith STI isolation according to one embodiment.

FIG. 5(c) shows a cross section of junction diodes as program selectorwith dummy CMOS gate isolation according to one embodiment.

FIG. 5(d) shows a cross section of junction diodes as program selectorwith SBL isolation according to one embodiment.

FIG. 6(a) shows a cross section of junction diodes as program selectorwith dummy CMOS gate isolation in SOI technologies according to oneembodiment.

FIG. 6(a 01) shows a cross section of a bottom-gate thin-film transistor(TFT) on insulator substrate, such as glass or flexible film, used as aselector for a programmable resistive memory.

FIG. 6(a 02) shows a cross section of a top-gate thin-film transistor(TFT) on insulator substrate, such as glass or flexible film, used as aselector for a programmable resistive memory.

FIG. 6(a 03) shows a cross section of a Schottky Barrier Diode (SBD)built by wide bandgap semiconductor, such as SiC or GaN, in a circuitintegrated with programmable resistive memory.

FIG. 6(a 04) shows a cross section of a P-i-N diode built by widebandgap semiconductor, such as SiC or GaN, in a circuit integrated withprogrammable resistive memory

FIG. 6(a 05) shows a cross section of a DMOS (Double-DiffusedMetal-Oxide Semiconductor) built by wide bandgap semiconductor, such asSiC or GaN, in a circuit integrated with programmable resistive memory.

FIG. 6(a 06) shows a cross section of a MESFET (Metal-SemiconductorField Effect Transistor) built by wide bandgap semiconductor, such asSiC or GaN, in a circuit integrated with programmable resistive memory.

FIG. 6(a 1) shows a top view of junction diodes as program selector withdummy CMOS gate isolation in SOI or similar technologies according toone embodiment.

FIG. 6(a 2) shows a top view of junction diodes as program selector withSilicide Block Layer (SBL) isolation in SOI or similar technologiesaccording to one embodiment

FIG. 6(a 3) shows a top view of a programmable resistive cell having aresistive element and a diode as program selector in one piece of anisolated active region with dummy gate isolation in the two terminals ofthe diode, according to one embodiment.

FIG. 6(a 4) shows a top view of a programmable resistive cell having aresistive element with a diode as program selector in one piece of anisolated active region with SBL isolation in the two terminals of thediode, according to another embodiment

FIG. 6(a 5) shows a top view of a Schottky diode with STI isolation as aprogram selector according to one embodiment.

FIG. 6(a 6) shows a top view of a Schottky diode with CMOS gateisolation as a program selector according to one embodiment.

FIG. 6(a 7) shows a top view of a Schottky diode with Silicide BlockLayer (SBL) isolation as a program selector according to one embodiment.

FIG. 6(b) shows a 3D view of junction diodes as program selector withdummy CMOS gate isolation in FINFET technologies according to oneembodiment.

FIG. 6(b 0 a) shows a 3D view of fin structured used as an electricalfuse element in FinFET technologies according to one embodiment.

FIG. 6(b 0 b) shows a 3D view of an active-region fuse in advanced CMOSprocess according to another embodiment.

FIG. 6(b 1 a) shows a device cross section of building a channel diodein a gate-last process after polysilicon gate formation according to oneembodiment.

FIG. 6(b 1 b) shows a device cross section of building a channel diodein a gate-last process after LDD implant according to one embodiment.

FIG. 6(b 1 c) shows a device cross section of building a channel diodein a gate-last process after spacer formation and source/drain implantsaccording to one embodiment.

FIG. 6(b 1 d) shows a device cross section of building a channel diodein a gate-last process after polysilicon gate removed according to oneembodiment.

FIG. 6(b 1 e) shows a device cross section of building a channel diodein a gate-last process after building replacement metal gate accordingto one embodiment.

FIG. 6(c 01) shows a block diagram of a programmable resistive cell witha read selector in parallel to a selector for low voltage read,according to one embodiment.

FIG. 6(c 02) shows a block diagram of a programmable resistive cell witha read selector in parallel to a MOS selector for low voltage read,according to another embodiment.

FIG. 6(c 03) shows a block diagram of a programmable resistive cell witha read selector in parallel to a diode selector for low voltage read,according to yet another embodiment.

FIG. 6(c 1) shows a schematic of a programmable resistive cell with aPMOS for low power applications according to one embodiment.

FIG. 6(c 2) shows a schematic of a programmable resistive cell with aPMOS for low power applications according to another embodiment.

FIG. 6(c 3) shows a schematic of a programmable resistive cell with anNMOS for low power applications according to another embodiment.

FIG. 6(c 4) shows a schematic of a programmable resistive cell with aPMOS configured as diode or MOS during program or read according to oneembodiment.

FIG. 6(c 5) shows a cross section of a programmable resistive cell witha PMOS configured as diode or MOS during program or read, correspondingto the programmable resistive cell in FIG. 6(c 4), according to oneembodiment.

FIG. 6(c 6) shows operation conditions of a programmable resistive cellwith a PMOS configured as a diode for program and read selector,corresponding to the programmable resistive cell in FIG. 6(c 4),according to one embodiment.

FIG. 6(c 7) shows operation conditions of a programmable resistive cellwith a PMOS configured as a MOS for program and read selector,corresponding to the programmable resistive cell in FIG. 6(c 4),according to one embodiment.

FIG. 6(c 8) shows a top view of a programmable resistive cell with amerged dummy-gate diode and a PMOS selector in an SOI technologyaccording to one embodiment.

FIG. 6(c 8 a) shows a schematic of a programmable resistive cell with amerged dummy-gate diode and a PMOS selector in an SOI technology,corresponding to FIG. 6(c 8), according to one embodiment.

FIG. 6(c 9) shows a top view of a programmable resistive cell with amerged PNP bipolar and a PMOS selector in an SOI technology according toone embodiment.

FIG. 6(c 9 a) shows a schematic of a programmable resistive cell with amerged PNP bipolar and a PMOS selector in an SOI technology,corresponding to FIG. 6(c 9), according to one embodiment.

FIG. 6(c 9 b) shows a top view of a planar bipolar device built in aCMOS process, corresponding to the PNP bipolar in FIG. 6(c 9 a),according to one embodiment.

FIG. 6(d 1) shows a programmable resistive cell using a dummy gate of aprogram selector as a PRD element in a thermally insulated substrate,according to one embodiment.

FIG. 6(d 2) shows a programmable resistive cell using a MOS gate of aprogram selector as a PRD element in a thermally insulated substrate,according to another embodiment.

FIG. 7(a) shows an electrical fuse element according to one embodiment.

FIG. 7(a 1) shows an electrical fuse element with a small body andslightly tapered structures according to another embodiment.

FIG. 7(a 2) shows an electrical fuse element using a thermallyconductive but electrically insulated area near the anode as a heat sinkaccording to another embodiment.

FIG. 7(a 3) shows an electrical fuse element using a thinner oxideunderneath the body and near the anode as a heat sink according toanother embodiment.

FIG. 7(a 3 a) shows an electrical fuse element using thin oxide areasunderneath the anode as heat sinks according to yet another embodiment.

FIG. 7(a 3 b) shows an electrical fuse element using a thin oxide areanear to the anode as a heat sink according to yet another embodiment.

FIG. 7(a 3 b 1) shows an electrical fuse element having a bend in thefuse body and/or using another interconnect underneath to aidprogramming according to yet another embodiment.

FIG. 7(a 3 c) shows an electrical fuse element using an extended anodeas a heat sink according to yet another embodiment.

FIG. 7(a 3 d) shows an electrical fuse element using a high resistancearea as a heat generator according to one embodiment.

FIG. 7(a 3 e) shows an electrical fuse element with an extended area inthe cathode according to one embodiment.

FIG. 7(a 3 f) shows an electrical fuse element with an extended area inthe cathode and a borderless contact in the anode according to oneembodiment.

FIG. 7(a 3 g) shows an electrical fuse element with an extended area inthe cathode and a shared contact in the anode according to oneembodiment.

FIG. 7(a 4) shows an electrical fuse element with at least one notchaccording to another embodiment.

FIG. 7(a 5) shows an electrical fuse element with part NMOS metal gateand part PMOS metal gate according to another embodiment.

FIG. 7(a 6) shows an electrical fuse element with a segment ofpolysilicon between two metal gates according to another embodiment.

FIG. 7(a 7) shows a diode constructed from a polysilicon between twometal gates according to another embodiment.

FIG. 7(a 8) shows a 3D perspective view of a metal fuse elementconstructed from a contact and a metal segment, according to oneembodiment.

FIG. 7(a 9) shows a 3D perspective view of a metal fuse elementconstructed from a contact, two vias, and segment(s) of metal 2 andmetal 1, according to another embodiment.

FIG. 7(a 10) shows a 3D perspective view of a metal fuse elementconstructed from three contacts, segment(s) of metal gate and metal 1with an extension at one end, according to another embodiment.

FIG. 7(a 11) shows a 3D perspective view of a metal fuse elementconstructed from three contacts, segments of metal gate and metal 1 witha hook shape at one end, according to another embodiment.

FIG. 7(a 12) shows a 3D perspective view of a metal1 fuse elementconstructed from one contact and four vias (two via1 and two via2)according to another embodiment.

FIG. 7(a 13) shows a 3D perspective view of a metal-gate fuse element ina FinFET technology according to yet another embodiment.

FIG. 7(b) shows a top view of an electrical fuse coupled to a junctiondiode with STI isolation in four sides, according to one embodiment.

FIG. 7(c) shows a top view of an electrical fuse coupled to a junctiondiode with dummy CMOS isolation in two sides, according to oneembodiment.

FIG. 7(d) shows a top view of an electrical fuse coupled to a junctiondiode with dummy CMOS isolation in four sides, according to oneembodiment.

FIG. 7(e) shows a top view of an electrical fuse coupled to a junctiondiode with Silicide Block Layer isolation in four sides, according toone embodiment.

FIG. 7(f) shows a top view of an abutted contact coupled between aresistive element, P terminal of a junction diode, and metal in a singlecontact, according to one embodiment.

FIG. 7(g) shows a top view of an electrical fuse coupled to a junctiondiode with dummy CMOS gate isolation between P+/N+ of a diode andadjacent cells, according to one embodiment.

FIG. 7(h) shows a top view of a programmable resistive cell coupled to ajunction diode with dummy CMOS gate isolation between P+/N+ activeregions, according to one embodiment.

FIG. 7(i 1) shows a top view of a programmable resistive cell with aPMOS for low voltage operations according to one embodiment.

FIG. 7(i 2) shows a top view of a programmable resistive cell with aPMOS for low voltage operations according to another embodiment.

FIG. 7(i 3) shows a top view of a programmable resistive cell with aPMOS for low voltage operations according to yet another embodiment.

FIG. 7(i 4) shows a top view of a programmable resistive cell with aPMOS for low voltage operations according to yet another embodiment.

FIG. 7(i 5) shows a top view of a programmable resistive cell with aPMOS for low voltage operations according to yet another embodiment.

FIG. 7(i 6) shows a top view of a programmable resistive cell with aPMOS and a shared contact for low voltage operations according to yetanother embodiment.

FIG. 7(i 7) shows a top view of 1×4 programmable resistive cells in aFinFET technology according to one embodiment.

FIG. 7(i 8) shows a top view of 2×2 programmable resistive cells in aFinFET technology according to another embodiment.

FIG. 7(i 8 a) shows a top view of a 2×1 programmable resistive cells ina FinFET technology using a fin as a programmable resistive elementaccording to one embodiment.

FIG. 7(i 8 b) shows a top view of a 2×1 programmable resistive cells ina FinFET technology using a fin as a programmable resistive elementaccording to another embodiment.

FIG. 7(i 9) shows a table for different operation modes of a selectoraccording to one embodiment.

FIG. 8(a) shows a top view of a metal fuse coupled to a junction diodewith dummy CMOS gate isolation according to one embodiment.

FIG. 8(b) shows a top view of a metal fuse coupled to a junction diodewith 4 cells sharing one N well contact in each side according to oneembodiment.

FIG. 8(c) shows a top view of a via1 fuse coupled to a junction diodewith 4 cells sharing one N well contact in each side according to oneembodiment.

FIG. 8(d) shows a top view of a two-dimensional array of via1 fusesusing P+/N well diodes according to one embodiment.

FIG. 8(e 1) shows a 3D perspective view of a contact/via fuse cellaccording to one embodiment.

FIG. 8(e 2) shows various cross sections of a contact/via fuse elementcorresponding to the contact/fuse cell in FIG. 8(e 1), according to oneembodiment.

FIG. 9(a) shows a cross section of a programmable resistive device cellusing phase-change material as a resistive element, with buffer metalsand a P+/N well junction diode, according to one embodiment.

FIG. 9(b) shows a top view of a PCM cell using a P+/N well junctiondiode as program selector in accordance with one embodiment.

FIG. 10 shows one embodiment of an MRAM cell using diodes as programselectors in accordance with one embodiment.

FIG. 11(a) shows a top view of an MRAM cell with an MTJ as a resistiveelement and with P+/N well diodes as program selectors in standard CMOSprocesses in accordance with one embodiment.

FIG. 11(b) shows another top view of an MRAM cell with an MTJ as aresistive element and with P+/N well diodes as program selectors in ashallow well CMOS process in accordance with another embodiment.

FIG. 12(a) shows one embodiment of a three-terminal 2×2 MRAM cell arrayusing junction diodes as program selectors and the condition to programthe upper-right cell into 1 in accordance with one embodiment.

FIG. 12(b) shows alternative conditions to program the upper-right cellinto 1 in a 2×2 MRAM array in accordance with one embodiment.

FIG. 13(a) shows one embodiment of a three-terminal 2×2 MRAM cell arrayusing junction diodes as program selectors and the condition to programthe upper-right cell into 0 in accordance with one embodiment.

FIG. 13(b) shows alternative conditions to program the upper-right cellinto 0 in a 2×2 MRAM array in accordance with one embodiment.

FIGS. 14(a) and 14(b) show one embodiment of programming 1 and 0 intothe upper-right cell, respectively, in a two-terminal 2×2 MRAM cellarray in accordance with one embodiment.

FIG. 15(a) shows a portion of a programmable resistive memoryconstructed by an array of n-row by (m+1)-columnsingle-diode-as-program-selector cells and n wordline drivers inaccordance with one embodiment.

FIG. 15(b) shows a block diagram of a portion of a low-powerprogrammable resistive memory array according to one embodiment.

FIG. 15(b 1) shows a block diagram of a portion of a programmableresistive memory array with MOS/junction diode for programming and MOSin triode region for reading according to one embodiment.

FIG. 15(c) shows a block diagram of a portion of a low-powerprogrammable resistive memory array with differential sensing accordingto one embodiment.

FIG. 15(d) shows a portion of timing diagram of a low-power OTP memoryarray according to one embodiment.

FIG. 16(a) shows a portion of a programmable resistive memoryconstructed by an array of 3-terminal MRAM cells according to oneembodiment.

FIG. 16(b) shows another embodiment of constructing a portion of MRAMmemory with 2-terminal MRAM cells.

FIGS. 17(a), 17(b), and 17(c) show three other embodiments ofconstructing reference cells for differential sensing.

FIG. 18(a) shows a schematic of a wordline driver circuit according toone embodiment.

FIG. 18(b) shows a schematic of a bitline circuit according to oneembodiment.

FIG. 18(c) shows a portion of memory with an internal power supply VDDPcoupled to an external supply VDDPP and a core logic supply VDD throughpower selectors.

FIG. 19(a) shows one embodiment of a schematic of a pre-amplifieraccording to one embodiment.

FIG. 19(b) shows one embodiment of a schematic of an amplifier accordingto one embodiment.

FIG. 19(c) shows a timing diagram of the pre-amplifier and the amplifierin FIGS. 19(a) and 19(b), respectively.

FIG. 20(a) shows another embodiment of a pre-amplifier, similar to thepre-amplifier in FIG. 18(a).

FIG. 20(b) shows level shifters according to one embodiment.

FIG. 20(c) shows another embodiment of an amplifier with current-mirrorloads.

FIG. 20(d) shows another embodiment of a pre-amplifier with two levelsof PMOS pullup stacked so that all core devices can be used.

FIG. 20(e) shows another embodiment of a pre-amplifier with anactivation device for enabling.

FIG. 21(a) depicts a method of programming a programmable resistivememory in a flow chart according to one embodiment.

FIG. 21(b) depicts a method of reading a programmable resistive memoryin a flow chart according to one embodiment.

FIG. 21(c) depicts a method of reading a programmable resistive memorywith MOS read selector in a flow chart according to one embodiment.

FIG. 21(d) depicts a programming method of randomizing OTP resistance ina flow chart according to one embodiment.

FIG. 21(e) depicts a programming method of reaching a desirable OTPresistance in a flow chart according to one embodiment.

FIG. 22 shows an electronic system according to one embodiment.

DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION

Embodiments disclosed herein use a P+/N well junction diode as programselector for a programmable resistive device. The diode can comprise P+and N+ active regions on an N well. Since the P+ and N+ active regionsand N well are readily available in standard CMOS logic processes, thesedevices can be formed in an efficient and cost effective manner. Forstandard Silicon-On-Insulator (SOI), FinFET, or similar technologies,isolated active regions can be used to construct diodes as programselectors or as programmable resistive elements. The programmableresistive device can also be included within an electronic system.

Programmable resistive memory can be fabricated with a wide-bandgapsemiconductor formed on a semiconductor or insulator substrate. Thewide-bandgap semiconductor can be Group IV-IV, such as silicon carbide(SiC), or III-V compound, such as gallium nitride (GaN). The substratecan be silicon, wide-bandgap semiconductor or insulator, such assapphire. The programmable resistive memory can be PCRAM, RRAM, MRAM, orOTP. The OTP element can be metal, polysilicon, silicided polysilicon,or thermally isolated silicon or wide-bandgap semiconductor. Theselector in a programmable resistive memory can be a MOS or diodefabricated in silicon or wide-bandgap semiconductor.

In one or more embodiments, junction diodes can be fabricated withstandard CMOS logic processes and can be used as program selectors forOne-Time Programmable (OTP) devices. The OTP devices can includeelectrical fuses are programmable elements. Examples of electrical fusesinclude interconnect fuse, contact/via fuse, contact/via anti-fuse,gate-oxide breakdown anti-fuse, etc. At least one heat sink, heatgenerator, or extended area can be built in a programmable resistivedevice (PRD) to assist programming. A heat sink can include at least oneconductor built in or near to a PRD element to dissipate heat fast. Aheat generator can include at least one high resistance material in thecurrent path to generate more heat. An interconnect, a conductivejumper, a single or a plurality of contact or via can be used as a heatgenerator. An extended area is an area in the PRD element where there isreduced or no current flow through. If a metal fuse is used as anelectrical fuse, at least one contact and/or a plurality of vias can bebuilt (possibly with use of one or more jumpers) in the program path togenerate more Joule heat to assist with programming. The jumpers areconductive and can be formed of metal, metal gate, local interconnect,polymetal, etc. The OTP device can have at least one OTP element coupledto at least one diode in a memory cell. The diode can be constructed byP+ and N+ active regions in a CMOS N well, or on an isolated activeregion as the P and N terminals of the diode. The OTP element can bepolysilicon, silicided polysilicon, silicide, polymetal, metal, metalalloy, local interconnect, thermally isolated semiconductor area, CMOSgate, or combination thereof.

Embodiments of the invention are discussed below with reference to thefigures. However, those skilled in the art will readily appreciate thatthe detailed description given herein with respect to these figures isfor explanatory purposes as the invention extends beyond these limitedembodiments.

FIG. 5(a) shows a block diagram of a memory cell 30 using at least aselector according to one embodiment. In particular, the memory cell 30includes a resistive element 30 a and a selector 30 b. The resistiveelement 30 a can be coupled between one terminal of the selector 30 band a high voltage V+. Another terminal of the selector 30 b can becoupled to a low voltage V−. The selector 30 b may have a third terminalin other embodiments to turn on the selector. In one implementation, thememory cell 30 can be a fuse cell with the resistive element 30 aoperating as an electrical fuse. The selector 30 b can serve as aprogram or read selector. The selector can be constructed a MOS, diode,bipolar, or combined from a P+/N well in standard CMOS processes using aP type substrate or on an isolated active region in an SOI or FinFETtechnologies. If the selector is a diode, the P+ and N+ active regionsserved as the anode and cathode of the diode can be the sources ordrains of CMOS devices. The N well is a CMOS well to house PMOS devices.Alternatively, the junction diode can be constructed from N+/P well intriple-well or CMOS processes using an N type substrate. The coupling ofthe resistive element 30 a and the selector 30 b between the supplyvoltages V+ and V− can be interchanged. By applying a proper voltagebetween V+ and V− for a proper duration of time, the resistive element30 a can be programmed into high or low resistance states, depending onvoltage and duration, thereby programming the memory cell 30 to store adata value (e.g., bit of data). The P+ and N+ active regions of thediode can be isolated by using a dummy CMOS gate, Shallow TrenchIsolation (STI) or Local Oxidation (LOCOS), or Silicide Block Layer(SBL).

FIG. 5(a 1) shows an I-V characteristic of programming a programmableresistive element, such as electrical fuse, according to one embodiment.The I-V characteristic shows a voltage applied to the electrical fuse inthe X-axis and the responding current is shown in the Y-axis. When thecurrent is very low, the slope of the curve is the inversion of theinitial resistance. As the current is increased, the resistance isincreased due to Joule heat so that the curve bends toward the X-axis ifthe temperature coefficient is positive. At a critical point, Icrit, theresistance of the electrical fuse changes drastically (or can evenbecome negative) due to rupture, decomposition, melt, or thermal runaway. The conventional way of programming an electrical fuse is byapplying a current higher than Icrit such that the programming behavioris chaotic like an explosion and the resultant resistance is highlyunpredictable. On the other hand, if a programming current is belowIcrit, the programming mechanism is solely based on electromigrationsuch that the programming behavior is very controllable, deterministic,and can be modeled precisely by the laws of physics. An electrical fusecan be programmed by applying multiple voltage or current pulses withprogressive resistance changes until a satisfactory high resistance canbe reached and sensed. The post-program yield can be 100% practically sothat the total yield can be determined by pre-program yield whichdepends on the pre-program fabrication defects. As a result, programmingan electrical fuse can be very reliable. The I-V characteristics in FIG.5(a 1) can also be applicable for an OTP cell that includes OTP elementand a selector. Further, the program status, whether an electrical fuseis programmed or not, is not clearly visible by optical microscope orscanning electronic microscope (SEM).

A method of programming a fuse reliably can include the following steps:(a) starting with a low program voltage initially to program a portionof an OTP memory and incrementing the program voltage until all OTPcells can be programmed and verified, marked this voltage as a low boundof the program voltage, (b) continuously incrementing the programvoltage to program a portion of OTP memory cells until at least one OTPcell, whether programmed or not, is verified failure, marked thisvoltage as a high bound of the program voltage. Incremental programmingcan happen on the same or another unprogrammed OTP cells in differentembodiments. Furthermore, the program time can be adjusted tocharacterize the program window by repeating the above steps (a) and (b)accordingly until a low bound, high bound, or program window (voltagerange between high and low bound) meets a target value. The window ofprogramming an electrical fuse reliably is marked in FIG. 5(a 1). Aftercharacterizing the program window, the other OTP cells can be programmedwith a voltage between the low and high bounds in at least one pulse.

A method of measuring the cell current can include the following steps:(a) applying a voltage to a program pad VDDP in the program mode, lowenough that can not program the OTP cells, (b) preventing the VDDP fromsupplying current to the OTP macro other than the OTP memory array, (c)turning on the selector of the OTP cell to be measured, (d) measuringthe current flowing through the VDDP pad as the cell current of theselected OTP cell. This method is applicable to those OTP cells thathave been programmed or not. This method can also be used as a criteriato determine whether an OTP cell is verified as being in anun-programmed state or a programmed state by using a maximum cellcurrent for programmed and a minimum cell current for un-programmed,respectively, to determine the low and high bounds of a program voltageduring characterization. This method can verify the resistance of an OTPcell, other than using a sense amplifier to convert the cell resistanceinto logic data.

The program voltage and time can be further optimized in differentembodiments to accommodate that some bits are easier to program and someare harder to program. A program pulse can be ramping from low to highin voltage over time. A lower voltage in shorten pulse can be applied tothose bits to start with and then a higher voltage and/or longer pulsecan be supplemented to those bits that haven't been programmed yet.Thus, the total program time can be saved accordingly. For example, theprogram voltage of an OTP is 3.5 to 4.2V and program time is 10 μs foran electrical fuse in 0.18 μm. Programming an OTP memory can includethree steps: (a) applying a 3.7V pulse with 1 us duration to program allbits, (b) verifying the data in nominal or lower supply voltage or withhigher reference resistor, and (c) applying a 3.9V pulse with 10 μsduration to those bits that haven't passed verification yet. In anotherembodiment, the same or higher voltage can be applied to all bits in thesecond or subsequent programming passes. In yet another embodiment, theprogram time of the second or the subsequent programming pulses can bedifferent from the first or earlier pulses.

Programming below a critical current can make fuse state almostundetectable. FIG. 5(a 1 a) show a scanning electronic microscope (SEM)scanning electronic microscope (SEM) photo 300, as an example, of someelectrical fuses programmed below a critical current as depicted in theabove description. Some fuses were programmed and some were not. Whetherthe fuses were programmed or not is hard to detect even under a highmagnification SEM. However, data security of an electrical fuse can befurther enhanced according to various embodiments also described herein.

FIG. 5(a 1 b) shows a plot 32 of cumulative percentage of cell currentdistributions for those unprogrammed fuses and fuses programmed below acritical current. The cell currents can be obtained by measuring thecurrent flowing through a program pad VDDP in low VDDP voltages. Curves33 and 34 are cumulated percentages of unprogrammed (data 0) andprogrammed (data 1) cell currents, respectively. Lines 36 and 35 are thelimits of data 1 and 0. The minimum cell current for “0” is about 950μA, or R0=100 ohm. The maximum cell current for “1” is about 150 μA, orR1=2K ohm (i.e. 10-20 times of R0).

FIG. 5(a 1 c) shows one embodiment of enhanced data security 32′.Curves/lines 33′, 34′, 35′, are 36′ data 0, data 1, minimum data 0, andmaximum data 1 of cell current distributions, respectively. The curve34′ for data 1 has been moved to the right with a maximum current of 350μA, or 1K ohm (i.e. 5-10 times of R0) by programming the fuse with lowervoltage and/or shorter time. As a result, the fuse program states can beharder to observe in SEM because of even less perceptible fuse damage.Nano-probes would be hard to detect any minor resistance changes from100 to 1K ohms because of resolution or noise.

FIG. 5(a 1 d) shows another embodiment of enhanced data security 32″.Curves/lines 33″, 34″, 35″, and 36″ are data 0, data 1, minimum data 0,and maximum data 1 of cell current distributions, respectively. The data0, the supposed unprogrammed state, can be programmed to around 300 ohm(i.e. 2-3 times of R0). This can be shown as data “0” 33″ in FIG. 5(a 1d) moved to the left. In this embodiment, any fuse would be programmedat least once, whether lightly or heavily programmed, to generate data 0and 1, respectively. The program states would be even harder to observesince all fuses would be programmed at least once with subtle degrees ofdamage to fuses. This embodiment is possible through programming fusesbelow a catastrophe condition. In yet another embodiment, any data “0”can be randomly programmed to 300 ohm to further scramble the fuseresistance. Similarly, data “1” can be randomly programmed withdifferent program voltages or time to further scramble the fuseresistance. Programming a fuse to a lower resistance can be achieved byusing a lower program voltage and/or shorter program time. Conversely,programming a fuse to a high resistance can be achieved by using ahigher program voltage and/or longer program time. By using eachembodiment alone or in any combinations, the fuse program states wouldbe almost impossible to detect externally by optical, mechanical, orelectrical means, while still providing an internal sense amplifier withsufficient margins to accurately and reliably sense data 0 and 1. In yetanother embodiment, the fuse resistance can be programmed to anydesirable level by initial lightly programming the fuse, verifying thefuse resistance, and then applying a few more pulses to further programthe fuse, if needed or as desired. In one embodiment, the verifyingmethod can be achieved by measuring the current flowing through the VDDPpad with applied voltages low enough for not disturbing the programstate or by using a sensing circuit to convert the fuse resistance intologic states.

The enhanced data security schemes discussed above can be applied toonly a portion of code (program code) and still be very effective. FIG.5(a 1 e) shows an address map 36 according to one embodiment. Normally,a program starts running when a Program Counter (PC) is initialized toaddress 00, as an example. Then the program starts in sequential orderuntil encounter branches. However, the code in address 00 can be placedwith a “jump to address AC.” In the address AC, the code can be placedwith a “jump to address F8.” Then in the address F8, the code can beplaced with a “jump to address 04.” Applying enhanced data security tothe codes in addresses 00, AC, and F8 can be sufficient to provideenough protection for the whole code.

Measuring the current flowing through the program pad VDDP at lowvoltage can be used to determine the fuse resistance. However, toprovide additionally security to data stored in the OTP memory, fuseresistance or corresponding current/voltage can be scrambled orrandomized. FIG. 5(a 1 f) shows a block diagram 37 of scrambling theVDDP current according to one embodiment. FIG. 5(a 1 f) shows a LinearFeedback Shift Register (LFSR) 38, as a pseudo random numbers. Theoutputs of LFSR 38 are coupled to the gates of the four NMOS, 39′-1through 39′-4, whose sources are coupled to ground and drains eachcoupled to VDDP through a resistor 39-1 through 39-4. When the LFSR 38is enabled after the OTP memory finishes programming and testing, therewould be some random currents flowing through the VDDP to ground toscramble the cell currents so that the real cell current will bedifficult to detect.

The program method as shown in FIG. 5(a 1) has a maximum program voltageor current that can be determined by thermal runaway, rupture, materialdecompose, or melting. A minimum program voltage or current can bedetermined by electromigration threshold. To increase the maximum limitand to decrease the minimum limit to thereby increase the program windowfor better manufacture or reliability, the program voltage or current toan OTP memory can be limited by an external supply voltage. In oneembodiment, the program current can be set to a current limit by atester during programming an OTP memory. In another embodiment, theinternal program voltage can be regulated to a suitable program voltagefrom an external supply voltage. In yet another embodiment, the currentflowing through an OTP memory can be regulated for not exceeding acurrent limit from an external supply voltage. To decrease the minimumlimit, the OTP element can include electromigration friendly structures,such as heat sink, heat generator, or extended area to accelerateelectromigration for programming.

FIG. 5(a 2 a) shows a portion of a block diagram of using a voltageregulator to set proper program voltage for an OTP memory, according toone embodiment. The new OTP memory 130 has an OTP memory 131, a PMOSheader 132, and an operational amplifier (OP) 133. The header 132 can becoupled to an external program pad VPP and an internal supply VDDP ofthe OTP memory 131. The gate of header 132 can be coupled to an outputof the OP 133. The OP 133 has one input from a reference voltage Vrefand another input from the VDDP. The VDDP will be regulated to Vref byusing an OP 133 to clamp VDDP to Vref. The Vref can be generated from aband-gap reference with proper scaling up or down in one embodiment.

FIG. 5(a 2 b) shows a portion of a block diagram of using a currentregulator to limit current for programming an OTP memory, according toanother embodiment. The new OTP memory 130′ has an OTP memory 131′, aPMOS header 132′, an operational amplifier (OP) 133′, and a resistor134′ with resistance R. The header 132′ can be coupled to an externalprogram pad VPP and an internal supply VDDP of the OTP memory 131′. Thegate of header 132′ can be coupled to an output of the OP 133′. The OP133′ has one input from a reference voltage Vref and another input fromone end of the resistor 134′. The resistor 134′ has the other endcoupled to ground. The current flowing through the OTP memory 131′ willbe regulated to Vref/R by the OP 133′ in this circuit configuration. TheVref can be generated from a band-gap reference with proper scaling upor down in one embodiment. The resistance R is normally about 10-15 ohmfor not to interfere programming. The current regulator can be tailed todifferent cell currents and therefore is a more desirable embodiment.

An OTP cell can be programmed at least once to make sure the cell can beprogrammed. However, if an OTP cell is programmed, the OTP cell can notbe used any more. This is always a dilemma for OTP memory. For afuse-based OTP programming below a critical current according to FIG.5(a 1), the program mechanism is purely determined by heat generationand heat dissipation so that a fuse with sufficiently low initialresistance can be determined programmable. If an initial fuse resistancecan be tested lower than 400 ohm, for example, this fuse is doomed to beprogrammable by using the program method as discussed in FIG. 5(a 1).This can be achieved by a sensing circuit with 400 ohm of referenceresistance. In another embodiment, measuring the current flowing throughthe program pad VDDP after applying a low voltage (e.g., 1.2V) to VDDPcan be used as criteria to determine being programmable.

FIG. 5(a 2 c) shows a portion of a block diagram of an OTP memory 131 asthe OTP memory 131 in FIG. 5(a 2 a) to demonstrate a novel scheme tofake program a fuse. The OTP memory 131 has a fuse cell 140-0,0organized as an n row and m column array. Each fuse cell has a fuseelement 144 coupled to a diode 145 as a program selector. The cathodesof the diode 145 for those cells in the same row are coupled to awordline bar (WLBi), where i=0, 1, 2, . . . , n−1. The other end of thefuse 144 for those cells in the same column are coupled to a bit line(BLj), where j=0, 1, 2, . . . , m−1. Each bit line can be coupled to aprogram pad VDDP through a write pass gate (YWPG) 141-0 through141-(m−1) for programming. Each bitline can also be coupled to a senseamplifier 143 through a read pass gate (YRPG) 142-0 through 142-(m−1)for read. The sense amplifier has a reference branch 144. To program afuse, a fuse cell (i, j) can be selected by pulling WLBi low and turningon the YWPGj so that a high current can flow from VDDP through YWPGi,fuse, diode, and WLBi to ground and program the fuse at cell (i,j)accordingly. To read a fuse resistance, a fuse cell (i,j) can beselected by pulling WLBi low and turning on the YRPGj so that a pull-upin the sense amplifier 143 can have a conduction path through YRPGj,fuse, diode, and WLBi, to ground. By comparing the current flowingthrough the cell and reference path, a data 0 or 1 can be determinedaccordingly.

The OTP memory as shown in FIG. 5(a 2 c) can be faked to a programmedstate by using low-voltage programming, such as 1.2V, and reading thesame cell at the same time. Since the program voltage is very low sothat the fake programming does not change the fuse resistance much butto raise the voltage level of a selected bitline. The high bitlinevoltage can result in reading “1” in the sense amplifier 143 output,instead of reading “0” in unprogrammed cells. By doing this way, apseudo-match pattern can be generated to test bitline/wordline open orshort accordingly. Moreover, the corresponding circuits for programming,such as YWPG, and program control circuits can be tested accordingly.Thus, full testability of a fuse-based OTP can be achieved. In theconcurrent read and low-voltage programming scheme, the net OTP cellcurrent due to fake programming can be deducted from the current flowingthrough the program pad VDDP and subtracting a sensing current flowingthrough the OTP element. Thus, the cell resistance can be calculatedaccordingly with the low program voltage, net cell current, and selectorcharacteristics.

The ability to generate “non-destructive program” offers many ways tofully test the entire OTP memory. A blank OTP always has data read as0s. It is hard to test a blank OTP if the sense amplifier (SA) reads 1s.It is also hard to test if a wordline (WL) or bitline (BL) is open,floating or coupled to the nearest WL/BL, because the readouts are allthe same. It would be hard to test if an OTP cell can be programmable,because once an OTP cell is test programmed, the OTP cell can not beused any more. It is even harder to test if the program circuits, suchas YWPG, work because this may cause accidental programming.

Several embodiments to achieve full testability are disclosed herein.According to the description pertaining to FIG. 5(a 1), the OTPprogramming can be based on heat accelerated electromigration (EM) belowa thermal runaway threshold. If one can test whether the initial fuseresistance is less than 600 ohm, e.g., 400 ohm, this fuse can surelygenerate sufficient heat to be programmable. This is one of thenon-destructive tests for OTP cell programmability. Another concept offull testability is based on techniques to generate a non-destructivereading 1, or fake reading 1, so that alternative 0s and 1s readouts canbe generated to test any defects in cells and/or peripheral circuitsjust like any memories, such as SRAMs.

One suitable OTP test pattern can be referred to as a “pseudo-walk.”This test pattern can be implemented by reading 0 for a cell, fakereading 1 the same cell, and then reading 0 the same cell again beforemoving on to the next cell. According to Van Der Goore's notation, thispseudo-walk pattern can be described as:

-   -   {r0, rx1, r0}↓↑        where rx1 means fake reading 1 and ↓↑ stand for increment or        decrement addresses.

Similarly, a more complicated pattern, referred to as a“pseudo-butterfly” pattern, can be implemented by reading 0 for a celland fake reading 1 all nearest neighbor cells, and reading the same cellagain before moving to the next cell. According to Van Der Goore'snotation, this pseudo-butterfly pattern can be described as:

-   -   {r_(ij)0, r_(i−1j)x1, r_(ij)0, r_(i+1j)x1, r_(ij)0, r_(ij−1)x1,        r_(ij)0, r_(ij+1)x1, r_(ij)0}↓↑    -   {r_(ij)x1, r_(i−1j)0, r_(ij)x1, r_(i+1j)0, r_(ij)x1, r_(ij−1)0,        r_(ij)x1, r_(ij+1)0, r_(ij)x1}↓↑        where the index i and j stand for a cell address in X and Y        dimensions and rx1 means fake reading 1.

By using pseudo-walk or pseudo-butterfly patterns, any address stuck-atfaults, address decoding, and any open or float WL/BL can be easilydetected. Moreover, program circuits can also be tested otherwise thereadout can not be flipped. One key concept is to apply voltage to VDDPhigh enough to flip the cell data and low enough not to program the cellaccidentally. The cell can only be fake reading 1 in a temporarynon-destructive programming cycle, otherwise the cell would have beenprogrammed accidentally. This is different from permanently writing 1 inSRAM tests. This can be particularly to fully test a blank OTP macrobefore shipping to customers to achieve ZERO defect. Similarly, a fakereading 0 can be created if the program pin voltage is lower than thereference dataline DLR voltage to read a programmed cell as 0, insteadof 1.

The concept of Concurrent Low-Voltage Write and Read (CLVWR) as depictedpreviously in FIG. 5(a 2 c) can be further elaborated to calculate cellresistance and to generate a resistance map. FIG. 5(a 2 d) shows a blockdiagram 150 of an OTP memory 151 with a resistor Rw 152 coupled betweenthe program pin VDDP of the OTP memory 151 and an external supply VPP,according to one embodiment. The resistor Rw 152 allows adjustingsensitivity of the external supply VPP with respect to cell resistanceRc when sweeping the external supply VPP until data read flipped, aswill be discussed further below.

FIG. 5(a 2 e) shows a portion of block diagram 150′ including a VPPresistor Rw 152′, Y-Write Pass Gate (YWPG) 151′ OTP cell (Rc 155′ anddiode 157′) and reference cell (Rf 156′ and diode 158′), current sources(153′ and 154′) and a sense amplifier 159′. The OTP block has a datalineDL coupled to a 1R1D cell consists of a fuse Rc 155′ and a diodeselector 157′. There is also a reference dataline DLR coupled to anotherreference resistor Rf 156′ and a diode 158′. In other embodiments, therecan be Y-Pass Gates coupled between the DL and the cell, especially whenthe OTP memory capacity is large. DL and DLR are coupled to currentsources 153′ and 154′, respectively, so that the difference inresistances Rc and Rf can be converted into different DL and DLRvoltages, Vc and Vr, to be amplified by a follow-on sense amplifier (SA)159′. The DL is coupled to a YWPG 151′ to a program pin VDDP, which isfurther coupled to an external supply voltage VPP through a resistor Rw152′.

Assuming the YWPG 151′ is turned off during read as in normal read, thecurrent sources 153′ and 154′, have a current I0 flowing through the Rcand Rf to generate DL and DLR voltages, Vc, and Vr, by IR drops. The SA159′ can amplify a small voltage difference in Vc and Vr to a full swingso as to determine the cell resistance Rc is larger or smaller than theresistance Rf. However, if the YWPG 151′ is turned on, an additionalcurrent I1 can source or sink through the resistance Rc to generateadditional voltage drop to raise or lower the Vc so as to change thenormal read out, i.e., reading 1, for blank cells or reading 0 forprogrammed cells. By sweeping VPP to change 11 until the cell dataflipped, the cell resistance Rc can be calculated accordingly.

The relationship for VPP to raise Vc so as to equal to Vr is

Vd+(I1+I0)·Rc=I0·Rf+Vd  (1)

Vpp=I1·Rw+I0·Rf+Vd  (2)

where Vd is the diode voltage, about 1V.Fuse resistance Rc can be readily calculated once current I0 is known:

${{Rc} = \frac{Rf}{{{\left( {{Vpp} - {Vd}} \right)/I}{0/{Rw}}} + 1 - {{Rf}/{Rw}}}},$

The relationship between Rc and VPP can be plotted in FIG. 5(a 2 f)based on a 0.18 um technology that has VDD=1.8V, 10=100 μA, and Rf=1.2K,as an example. The HSPICE simulation matches the analytic calculationsvery well.

Rw determines the sensitivity, or curvature, of VPP to Rc in the plot.If Rw is larger, the bending in the curve in FIG. 5(a 2 f) will belarger. However, if resistance Rw is omitted, the curve in FIG. 5(a 2 f)is almost flat, as the DL voltage Vc will be clamped by VPP.

With more detailed understanding of the CLVWR, several embodiments todetermine the cell resistance Rc can be implemented. With a fixed Rw,VPP can be swept higher or lower to flip an unprogrammed or programmedcell into an opposite state in one embodiment. Another embodiment is tosweep sourcing or sinking the additional current I1 to the cells so asto flip an unprogrammed or programmed cell into an opposite state. Inthis embodiment, resistance Rw can be omitted. Yet another embodiment isto sweep the resistance Rw with a fixed VPP, so as to flip the data readstate. Yet another embodiment is to sweep the reference resistance Rf,reference dataline voltage Vr, or additional current sourcing/sinkingthe reference dataline until the data state flips. This can be done bybring the node Vr to an external pin with a switch in a test mode, notshown in FIG. 5(a 2 e). Regardless of which parameters to sweep, a cellresistance map can be generated by recording the sweeping parameterswhen the data read flip. This can be applied to finding the programmedor unprogrammed cell resistance.

The testability described in FIG. 5(a 2 c)-5(a 2 f) is for illustrativepurposes. There can be many different but equivalent embodiments forthose skilled in the art and yet still fall within the scope of thisinvention. For example, the OTP memory can have any capacity with anyX/Y-addresses or any numbers of WL/BL. The OTP cell can have at leastone OTP element with different kinds of selectors, such as MOS or diode.The sense amplifier can have different type of designs for differentapplications. There can be YRPG or YWPG coupled between cells and thedatalines. The YWPG or YRPG design can be NMOS, PMOS, or full CMOS passgates. The sweeping can be voltage, current, or resistance in programpin or the reference dataline. There can be many different kinds ofSRAM-like test patterns generated and that are still within the scope ofthis invention.

Electrical fuse cell can be used as an example to illustrate the keyconcepts according to one embodiment. FIG. 5(b) shows a cross section ofa diode 32 using a P+/N well diode as program selector with ShallowTrench Isolation (STI) isolation in a programmable resistive device. P+active region 33 and N+ active region 37, constituting the P and Nterminals of the diode 32 respectively, are sources or drains of PMOSand NMOS in standard CMOS logic processes. The N+ active region 37 iscoupled to an N well 34, which houses PMOS in standard CMOS logicprocesses. P substrate 35 is a P type silicon substrate. STI 36 isolatesactive regions for different devices. A resistive element (not shown inFIG. 5(b)), such as electrical fuse, can be coupled to the P+ region 33at one end and to a high voltage supply V+at the other end. To programthis programmable resistive device, a high voltage is applied to V+, anda low voltage or ground is applied to the N+ region 37. As a result, ahigh current flows through the fuse element and the diode 32 to programthe resistive device accordingly.

FIG. 5(c) shows a cross section of another embodiment of a junctiondiode 32′ as program selector with dummy CMOS gate isolation. ShallowTrench Isolation (STI) 36′ provides isolation among active regions. Anactive region 31′ is defined between STI 36′, where the N+ and P+ activeregions 37′ and 33′ are further defined by a combination of a dummy CMOSgate 39′, P+ implant layer 38′, and N+ implant (the complement of the P+implant 38′), respectively, to constitute the N and P terminals of thediode 32′. The dummy CMOS gate 39′ is a CMOS gate fabricated in standardCMOS process. The width of dummy gate 39′ can be close to the minimumfigure width of a CMOS gate and can also be less than twice the minimumfigure width. The dummy MOS gate can also be created with a thicker gateoxide. The diode 32′ is fabricated as a PMOS-like device with 37′, 39′,33′, and 34′ as source, gate, drain, and N well, except that the source37′ is covered by an N+ implant, rather than a P+ implant 38′. The dummyMOS gate 39′, preferably biased at a fixed voltage or coupled to the N+active region 37′, only serves for isolation between P+ active region33′ and N+ active region 37′ during fabrication. The N+ active 37′ iscoupled to an N well 34′, which houses PMOS in standard CMOS logicprocesses. P substrate 35′ is a P type silicon substrate. A resistiveelement (not shown in FIG. 5(c)), such as electrical fuse, can becoupled to the P+ region 33′ at one end and to a high voltage supplyV+at the other end. To program this programmable resistive device, ahigh voltage is applied to V+, and a low voltage or ground is applied tothe N+ active region 37′. As a result, a high current flows through thefuse element and the diode 32′ to program the resistive deviceaccordingly. This embodiment is desirable for isolation for small sizeand low resistance.

FIG. 5(d) shows a cross section of another embodiment of a junctiondiode 32″ as program selector with Silicide Block Layer (SBL) isolation.FIG. 5(d) is similar to 5(c), except that the dummy CMOS gate 39″ inFIG. 5(c) is replaced by SBL 39″ in FIG. 5(d) to block a silicide grownon the top of active region 31″. Without a dummy MOS gate or a SBL, theN+ and P+ active regions would be undesirably electrically shorted by asilicide on the surface of the active region 31″.

FIG. 6(a) shows a cross section of another embodiment of a junctiondiode 32″ as a program selector in Silicon-On-Insulator (SOI), FinFET,or similar technologies. In SOI technologies, the substrate 35″ is aninsulator such as SiO₂ or similar material with a thin layer of silicongrown on top. All NMOS and PMOS are in active regions isolated by SiO₂or similar material to each other and to the substrate 35″. An activeregion 31″ is divided into N+ active regions 37″, P+ active region 33″,and bodies 34″ by a combination of a dummy CMOS gate 39″, P+ implant38″, and N+ implant (the complement of P+ implant 38″). Consequently,the N+ active regions 37″ and P+ active region 33″ constitute the N andP terminals of the junction diode 32″. The N+ active regions 37″ and P+active region 33″ can be the same as sources or drains of NMOS and PMOSdevices, respectively, in standard CMOS processes. Similarly, the dummyCMOS gate 39″ can be the same CMOS gate fabricated in standard CMOSprocesses. The dummy MOS gate 39″, which can be biased at a fixedvoltage or coupled to the N+ region 37″, only serves for isolationbetween P+ active region 33″ and N+ active region 37″ duringfabrication. The width of the dummy MOS gate 39″ can vary but can, inone embodiment, be close to the minimum gate width of a CMOS gate andcan also be less than twice the minimum width. The dummy MOS gate canalso be created with a thicker gate oxide to sustain higher voltage. TheN+ active regions 37″ can be coupled to a low voltage supply V−. Aresistive element (not shown in FIG. 6(a)), such as an electrical fuse,can be coupled to the P+ active region 33″ at one end and to a highvoltage supply V+at the other end. To program the electrical fuse cell,a high and a low voltages are applied to V+ and V−, respectively, toconduct a high current flowing through the resistive element and thejunction diode 32″ to program the resistive device accordingly. Otherembodiments of isolations in CMOS bulk technologies, such as dummy MOSgate, or SBL in one to four (1-4) or any sides or between cells, can bereadily applied to CMOS SOI technologies accordingly.

FIG. 6(a 01) shows a cross section of a bottom-gate Thin-Film TransistorMOSFET (TFT MOSFET) 40, according to one embodiment. A gate 41 isfabricated on top of a glass or flexible substrate 42. A thin layer ofdielectric 43, such as silicon nitride (SiNx) or silicon dioxide (SiO2)can be built on top of the flexible structure 42. Then a thin layer ofamorphous silicon (a-Si:H) 44 can be built on top of the thin dielectriclayer 43 and can serve as a MOS conductive channel. Additionally,separate thin layers of N-type semiconductor (N+) 45 can be fabricatedfor a source 46 and a drain 47 terminals, respectively, and then onwhich electrodes can be deposited. The source 46, drain 47, and gate 41constitute a MOSFET on TFT technologies just like in crystallinesilicon.

FIG. 6(a 02) shows a cross section of a top-gate thin-film device 40′built on a thin semiconductor film 41′ on an insulator substrate 42′,according to one embodiment. The thin semiconductor film 41′ can beamorphous silicon (a-Si:H) or polysilicon for a thin-film device to bebuilt upon. The substrate 42′ can be glass, plastics, paper, cellular,metal, or any kind of flexible substrate. The thin semiconductor film41′ can be patterned with dielectrics, such as SiO2 or SiNx, asisolation between active silicon islands. The active silicon islands canbe grown with a thin oxide or silicon nitride layer 46′ as gatedielectric and then built with a gate 47′ on top to divide the siliconislands into at least two active regions. One active region 43′ can beimplanted with one type of dopant and the other region 44′ can beimplanted with the same or different type of dopant to construct a MOSor diode, respectively. For example, if the active regions 43′ and 44′are implanted with N+ dopant, then regions 43′, 44′, 47′, and 45′ can besource, drain, gate, and bulk to constitute a NMOS device. In anotherexample, if the active region 43′ is implanted with N+ and the activeregion 44′ is implanted with P+, then regions 43′, 44′, and 45′ can becathode, anode, and body to constitute a diode as shown in FIG. 6(a 02).The gate dielectrics can be silicon dioxide (SiO2) or silicon nitride(SiNx). The gate can be a metal gate or other electrode that can beplaced on top, in the bottom, or top/bottom in a dual gate structure.The TFT can be bi-layer or tri-layer of amorphous silicon and siliconnitride. The TFT devices can be, inverted, staggered, or coplanar indifferent source, drain, and gate electrode structures.

The device shown in FIGS. 6(a 01) and 6(a 02) can be built in athin-film-transistor (TFT) technology such as in LCD displaytechnologies. Doing so can operate to construct a switch device in eachpixel. The thin silicon film used can be amorphous silicon having almostno crystal silicon structures, or polysilicon having many differentsizes and orientation of silicon grains. Since the lattice structure ofan amorphous is not well structured as the crystalline silicon, mobilityof the carriers is very low, about 1 cm²/sec/V, while the mobility inN-type crystalline silicon can be about 600 cm²/sec/V. The operatingcurrent of the MOS devices in use can be in the range of 1-10 μA, whilethe crystallize silicon is about 1-10 mA. The operation voltage can be40 volts, while the crystallize silicon is normally operated in 1-5Vrange. Therefore, the circuit speed is very slow comparing with thecrystal silicon. However, the material and processing costs can be verylow and can be built in larger area in many different low-costsubstrates. Another similar thin-film technology is polysilicon TFT.Polysilicon can be fabricated at low temperature, called Low TemperaturePoly-Silicon (LTPS), and can have mobility much higher, or 80-100cm²/sec/V, and can have an operating voltage about 10V and thus offersfaster circuit speed. The device operating current can be in the rangeof 100μ-1 mA, which is only about 10 times lower than in crystallinesilicon. The amorphous silicon and LTPS TFT are used for various kindsof passive and active LCD displays today. The diode shown in FIG. 6(a02) can be used as a selector for a programmable resistance device inany kinds of TFT technologies.

Other than silicon-based TFT devices, there can be organic TFT (OTFT)and metal oxide TFT devices. Organic molecules in aromatic or conjugatematerial have many semiconductor properties, for example, polymer ofthiophene molecules or PMMA (polymethyl-methacrylate) can be fabricatedin very low temperature with high mobility, and has many goodelectrical, mechanic, and optical properties. Organic molecules can beanother semiconductor material to build TFT as selector or OTP elementfor a programmable resistive memory on TFT technologies. Metal oxide,such as Indium Tin Oxide (ITO), Zinc Oxide (ZnO), Indium Zinc Oxide(IZO) or Indium-Gallium-Zinc-Oxide (IGZO), can also be anothersemiconductor material to build TFT FET upon or used as electrodes.Those non-Si TFTs can have higher mobility than a-Si:H or LTPS TFT andcan be easier to fabricate in lower temperature and in lower costs. Theconductive channel of a MOSFET can be fabricated in organic or metaloxide semiconductor other than a-Si:H or LTPS. The electrodes of aMOSFET can also be fabricated in organic or metal oxide semiconductorother than a-Si:H, LTPS, or metal. For examples, the source, drain, andgate electrodes can be fabricated in Indium Tin Oxide (ITO) TFT to havehigher mobility than in the LTPS TFT. Silicon germanium (SiGe) can beanother material to build TFT devices upon.

Though there are many different materials, structures, mechanisms,theories about non-single-crystalline semiconductor technologies, suchas a-Si:H, LTPS, organic TFT, and metal oxide TFT, the devices can allbe used as selectors for a programmable resistive memory. There are manydifferent and yet equivalent embodiments of using various TFT devices asa selectors or elements for a programmable resistive device and they allfall into the scope of the invention for those skilled in the arts.

Programmable resistive memory can be integrated with wide-bandgapsemiconductor devices. Wide-bandgap semiconductor has bandgap muchlarger than that of silicon. For example, silicon carbine (SiC) has abandgap of 3.2 eV, while silicon has only 1.12 ev. The breakdown voltageof a semiconductor is about a square of the bandgap, such that the widebandgap semiconductor can have about 10× of breakdown voltage. Moreover,the wide bandgap semiconductor can have high mobility, high saturationvelocity, and high thermal conductivity as compared to silicon.Wide-bandgap semiconductors can offer significant advantages oversilicon in power, photo-electronics, or high frequency applications. Forexample, if the breakdown voltage can be higher, the layers to blockhigh voltage in a semiconductor can be thinner. The resistance can belower accordingly so that the energy loss can be lesser. Higher mobilityand saturation velocity can result in lower on-resistance, i.e., lowerRon, to reduce energy loss and also make the devices operating fasterfor high frequency operations. About 3× more thermal conductivity allowsthe wide bandgap semiconductor to operate at higher temperatures thansilicon. High thermal conductivity can dissipate heat much faster toprevent thermal runaway—an important design consideration for powerdevices. Typical silicon-based power devices can only operate about10V−600V, while wide-bandgap power devices can easily operate in1,000-10 KV region with less energy loss. Almost all silicon-basedsemiconductor devices can be readily applied to wide-bandgapsemiconductors, such as Schottky Barrier Diode (SBD), JFET, MOSFET,MESFET, IGBT, DMOS or bipolar, etc. There are many wide-bandgapsemiconductors in groups IV-IV, III-V, or II-VI, though Silicon Carbine(SiC) and Gallium Nitride (GaN) are two of the many promising materials.

FIG. 6(a 03) shows a cross section of a wide-bandgap semiconductorSchottky Barrier Diode (SBD) 50. The SBD 50 has a metal to semiconductorjunction, instead of a P/N junction diode, that has low turn on voltageand high switch speed due to majority carrier transportation. The SBD 50has Schottky contact in an anode 51 and ohmic contact in a cathode 52.The SBD 50 has a semiconductor substrate 54 and a drift region 55 thatare built in wide-bandgap semiconductor or silicon material. The driftregion 55 is to provide a layer for carriers to move freely and to blockhigh voltage.

FIG. 6(a 04) shows a cross section of a wide-bandgap semiconductor P-I-Ndiode 50′ that has an anode 51′, cathode 52′, N+ region 54′, N− region55′, P+ region 56′, and isolation 57′. The diode 50′ has a N− regionthat can be nearly intrinsic to block high voltage so that the diode 50′can be operated in high-level injection, e.g., electron and holeconcentrations are comparable, such as operation in microwave ormillimeter wave regions.

FIG. 6(a 05) shows a cross section of a wide-bandgap semiconductor DMOS(Double diffused MOS) 50″ that has a source terminal 51″, drain 52″,gate 53″, N+ substrate 54″, N-drift region 55″, P-base 56″, N+ source57″, and isolation 58″. The DMOS 50″ has the lowly-doped P-base 56″diffusion region in the source to reduce breakdown voltage for highvoltage operations. The N-drift region 55″ allows carriers to transportfor similar objectives. The DMOS 50″ is suitable for power MOS insilicon that can be configured in either horizontal or verticalstructures. The diffusion, or double diffusion 56″, can be in source ordrain regions for different structures. The gate 53″ can also befabricated by entrenching into the silicon and reaching the same heightas the P-base region 56″ in a 3-dimensional structure to mitigate theelectrical field in the bottom of the trench to ensure long termreliability.

FIG. 6(a 06) shows a cross section of a wide-bandgap semiconductorMESFET 50′″ that has a source 51′″, drain 52′″, gate 53′″, substrate54′″, buffer-layer 55′″, and channel 56″. The MESFET 50′″ is differentfrom MOSFET with metal to semiconductor interface in the gate tochannel, instead of metal-oxide-semiconductor interface in a MOSFET. Thebuffer-layer 55′″ can be a structure to interface wide-bandgapsemiconductor 56′″ with silicon substrate 54′″ or can be just a regionto block high voltage.

Programmable Resistive Devices (PRD) can be integrated with wide-bandgapsemiconductors to provide wide ranges of applications in power,photonics, microwave domains. For examples, an OTP memory, one of PRDthat can be programmed only once, can be integrated with wide-bandgapdevices to provide read and nonvolatile write for chip ID, security key,device trimming, parameter storage, code storage, and/or redundancy,etc. The selector in the PRD cells can be fabricated by wide-bandgapsemiconductor. The gate in a wide-bandgap MOSFET device can befabricated by polysilicon or silicided polysilicon, which is suitable asa PRE of an OTP. A thin film or interconnect of thermally insulatedwide-bandgap semiconductor can also be used as PRE of an OTP.

Wide bandgap semiconductor can be any kind of semiconductor with bandgaphigher than that of silicon. The wide-bandgap semiconductor can beanother group IV semiconductor, such as diamond. The wide-bandgapsemiconductor can be IV-IV, III-V, or II-VI compounds, such as SiC orGaN. One or more embodiments described herein concern applyingprogrammable resistive devices to wide-bandgap semiconductors. There canbe any kinds of crystalline or compound wide-bandgap semiconductors forprogrammable resistive devices and they all fall into the scope of thisinvention for those skilled in the art.

FIG. 6(a 1) shows a top view of one embodiment of a junction diode 832,corresponding to the cross section as shown in FIG. 6(a), constructedfrom an isolated active region as a program selector inSilicon-On-Insulator (SOI), FinFET, or similar technologies. One activeregion 831 is divided into N+ active regions 837, P+ active region 833,and bodies underneath dummy gate 839 by a combination of a dummy CMOSgate 839, P+ implant 838, and N+ implant (the complement of P+ implant838). Consequently, the N+ active regions 837 and P+ active region 833constitute the N and P terminals of the junction diode 832. The N+active region 837 and P+ active region 833 can be the same as sources ordrains of NMOS and PMOS devices, respectively, in standard CMOSprocesses. Similarly, the dummy CMOS gate 839 can be the same CMOS gatefabricated in standard CMOS processes. The dummy MOS gate 839, which canbe biased at a fixed voltage or coupled to N+ region 837, only servesfor isolation between P+ active region 833 and N+ active region 837during fabrication. The N+ active region 837 can be coupled to a lowvoltage supply V−. A resistive element (not shown in FIG. 6(a 1)), suchas an electrical fuse, can be coupled to the P+ active region 833 at oneend and to a high voltage supply V+at the other end. To program theresistive element, high and low voltages are applied to V+ and V−,respectively, to conduct a high current flowing through the resistiveelement and the junction diode 832 to program the resistive elementaccordingly. Other embodiments of isolations in CMOS bulk technologies,such as dummy MOS gate, or SBL in one to four (1-4) or any sides orbetween cells, can be readily applied to CMOS SOI technologiesaccordingly.

FIG. 6(a 2) shows a top view of one embodiment of a diode 832′constructed from an isolated active region as a program selector in anSOI, FinFET, or similar technologies. This embodiment is similar to thatin FIG. 6(a 1), except that SBL is used instead of a dummy gate forisolation. An active region 831′ is on an isolated substrate that iscovered by P+838′ and N+835′ implant layers. The P+838′ and N+835′ areseparated with a space D and a Silicide Block Layer (SBL) 839′.coversthe space and overlap into both P+838′ and N+835′ regions. The P+838′and N+835′ regions serve as the P and N terminals of a diode,respectively. The space regions can be doped with slightly P, N, orunintentionally doped. The space D and/or the doping level in the spaceregions can be used to adjust the breakdown or leakage of the diode832′. The diode constructed in an isolated active region can be oneside, instead of two sides as is shown in FIG. 6(a 2) or in anotherembodiment.

FIG. 6(a 3) shows a top view of one embodiment of a fuse cell 932constructed from a fuse element 931-2, a diode 931-1 as program selectorin one piece of an isolated active region, and a contact area 931-3.These elements/regions (931-1, 931-2, and 931-3) are all isolated activeregions built on the same structure to serve as a diode, fuse element,and contact area of a fuse cell 932. The isolated active region 931-1 isdivided by a CMOS dummy gate 939 into regions 933 and 937 that arefurther covered by P+ implant 938 and N+ implant (the complement of theP+ implant 938) to serve as P and N terminals of the diode 931-1. The P+933 is coupled to a fuse element 931-2, which is further coupled to thecontact area 931-3. The contact area 931-3 and the contact area forcathode of the diode 931-1 can be coupled to V+ and V− supply voltagelines, respectively, through a single or plural of contacts. When highand low voltages are applied to V+ and V−, respectively, a high currentcan flow through the fuse element 931-2 to program the fuse into a highresistance state. In one implementation, the fuse element 931-2 can beall N or all P. In another implementation, the fuse element 931-2 can behalf P and half N so that the fuse element can behave like areverse-biased diode during read, when the silicide on top is depletedafter program. If there is no silicide available, the fuse element931-2, which is an OTP element, can be constructed as N/P or P/N diodesfor breakdown in the forward or reverse biased condition. In thisembodiment, the OTP element can be coupled directly to a diode asprogram selector without any contacts in between. Thus, the cell areacan be small and its cost can be relatively low.

FIG. 6(a 4) shows a top view of one embodiment of a fuse cell 932′constructed from a fuse element 931′-2, a diode 931′ as program selectorin one piece of an isolated active region, and a contact area 931′-3.These elements/regions (931′-1, 931′-2, and 931′-3) are all isolatedactive regions built on the same structure to serve as a diode, fuseelement, and contact area of a fuse cell 932′. The isolated activeregion 931′-1 is divided by a Silicide Block Layer (SBL) in 939′ toregions 933′ and 937′ that are further covered by P+ implant 938′ and N+implant 935′ to serve as P and N terminals of the diode 931′. The P+933′ and N+ 937′ regions are separated with a space D, and an SBL 939′covers the space and overlaps into both regions. The space D and/or thedoping level in the space region can be used to adjust the breakdownvoltage or leakage current of the diode 931′. The P+ 933′ is coupled toa fuse element 931′-2, which is further coupled to the contact area931′-3. The contact area 931′-3 and the contact area for the cathode ofthe diode 931′-1 can be coupled to V+ and V− supply voltage lines,respectively, through a single or plural of contacts. When high and lowvoltages are applied to V+ and V−, respectively, a high current can flowthrough the fuse element 931′-2 to program the fuse into a highresistance state. In one implementation, the fuse element 931′-2 can beall N or all P. In another implementation, the fuse element 931′-2 canbe half P and half N so that the fuse element can behave like areverse-biased diode during read, when the silicide on top is depletedafter program. If there is no silicide available, the fuse element931′-2, which is an OTP element, can be constructed as N/P or P/N diodesfor breakdown in the forward or reverse biased condition. In thisembodiment, the OTP element can be coupled directly to a diode asprogram selector without any contacts in between. Thus, the cell areacan be small and the costs can be low.

The diode as a program selector can be made of Schottky diode instandard CMOS processes as shown in FIGS. 6(a 5)-6(a 7). The Schottkydiode is a metal to semiconductor diode, instead of a junction diodethat is fabricated from the same semiconductor material but with N+ andP+ dopants in two terminals. The top view of a Schottky diode as aprogram selector can be very similar to that of a junction diode, exceptthe anode of the diode is a metal to a lightly doped N or P type dopant,which is different from a heavily P+ doped in a junction diode. Theanode of the Schottky diode can be made of any kinds of metals, such asaluminum or copper, metal alloys, or silicides in other embodiments. TheSchottky diode can be a metal to N+ active on N well or P+ active on Pwell. The Schottky diode can be fabricated in bulk or SOI CMOS, planaror FinFET CMOS in other embodiments. There are many variations butequivalent embodiments of fabricating Schottky diodes that are stillwithin the scope of this invention for those skilled in the art.

FIG. 6(a 5) shows a top view of a Schottky diode 530 according to oneembodiment. The Schottky diode 530 can be formed inside an N well (notshown) has active regions 531 as the cathode and an active region 532 asthe anode. The active regions 531 are covered by N+ implant 533 with acontact 535 coupled to an external connection. The active region 532 isnot covered by N+ or P+ implant so that the doping concentration of theactive region 532 is substantially the same as the doping concentrationof the N well, A silicide layer can be formed on top of the activeregion 532 to form a Schottky barrier with the silicon, which is furthercoupled to a metal 538 through an anode contact 536. A P+ implant 534can overlap into the active region 532 to reduce leakage. In otherembodiments, the P+ implant 534 can be omitted.

FIG. 6(a 6) shows a top view of a Schottky diode 530′ according to oneembodiment. The Schottky diode 530′ can be formed inside an N well (notshown) has an active region 531 to house the anode and cathode of thediode. The active region 531′ is divided by dummy gates 539′ into acentral anode and two outside cathode areas. The cathode areas arecovered by an N+ implant 533′ with a contact 535′ coupled to externalconnection. The central anode is not covered by N+ or P+ implant so thatthe doping concentration of the active region 532 is substantially thesame as the doping concentration of the N well. A silicide layer can beformed on top of the central anode region to form a Schottky barrierwith the silicon, which is further coupled to a metal 538′ through ananode contact 536′. A P+ implant 534′ can overlap into the centralactive region to reduce leakage. The boundary of N+ 533′ and P+ 534′ canfall on the cathode areas in other embodiments. The dummy gate 539′and/or P+ implant 534′ can surround the contact 536′ area in all sidesto further reduce leakage current in one embodiment. The P+ implant 534′can be omitted in another embodiment.

FIG. 6(a 7) shows a top view of a Schottky diode 530″ according to oneembodiment. The Schottky diode 530″ can be formed inside an N well (notshown) has an active region 531″ to house the anode and cathode of thediode. The active region 531″ is divided by Silicide Block Layer (SBL)539″ into a central anode and two outside cathode areas. The cathodeareas are covered by an N+ implant 533″ with a contact 535″ coupled toexternal connection. The central anode 532″ is not covered by N+ or P+implant so that the doping concentration of the active region 532 issubstantially the same as the doping concentration of the N well. Asilicide layer can be formed on top of the central anode region to forma Schottky barrier with the silicon, which is further coupled to a metal538″ through an anode contact 536″. A P+ implant region 534″ can overlapinto the anode region to reduce leakage. In other embodiments, the P+implant 534″ can be omitted.

FIG. 6(b) shows a cross section of another embodiment of a diode 45 as aprogram selector in FinFET technologies. FinFET refers to a fin-based,multigate transistor. FinFET technologies are similar to theconventional CMOS except that thin and tall silicon islands can beraised above the silicon substrate to serve as the bulks of CMOSdevices. The bulks are divided into source, drain, and channel regionsby polysilicon or non-aluminum metal gates like in the conventionalCMOS. The primary difference is that the MOS devices are raised abovethe substrate so that channel widths are the height of the islands,though the direction of current flow is still in parallel to thesurface. In an example of FinFET technology shown in FIG. 6(b), thesilicon substrate 35 is an epitaxial layer built on top of an insulatorlike SOI or other high resistivity silicon substrate. The siliconsubstrate 35 can then be etched into several tall rectangular islands31-1, 31-2, and 31-3. With proper gate oxide grown, the islands 31-1,31-2, and 31-3 can be patterned with MOS gates 39-1, 39-2, and 39-3,respectively, to cover both sides of raised islands 31-1, 31-2, and 31-3and to define source and drain regions. The source and drain regionsformed at the islands 31-1, 31-2, and 31-3 are then filled withsilicon/SiGe called extended source/drain regions, such as 40-1 and40-2, so that the combined source or drain areas can be large enough toallow contacts. The extended source/drain can be fabricated frompolysilicon, polycrystalline Si/SiGe, lateral epitaxial growthsilicon/SiGe, or Selective Epixatial Growth (SEG) of Silicon/SiGe, etc.The extended source/drain regions 40-1 and 40-2, or other types ofisolated active regions, can be grown or deposited to the sidewall orthe end of the fins. The fill 40-1 and 40-2 areas in FIG. 6(b) are forillustrative purpose to reveal the cross section and can, for example,be filled up to the surface of the islands 31-1, 31-2, and 31-3. In thisembodiment, active regions 33-1,2,3 and 37-1,2,3 are covered by a P+implant 38 and N+ implant (the complement of P+ implant 38),respectively, rather than all covered by P+ implant 38 as PMOS in theconventional FinFET, to constitute the P and N terminals of the junctiondiode 45. The N+ active regions 37-1,2,3 can be coupled to a low voltagesupply V−. A resistive element (not shown in FIG. 6(b)), such as anelectrical fuse, can be coupled to the P+ active region 33-1,2,3 at oneend and to a high voltage supply V+at the other end. To program theelectrical fuse, high and low voltages are applied between V+ and V−,respectively, to conduct a high current flowing through the resistiveelement and the junction diode 45 to program the resistive deviceaccordingly. Other embodiments of isolations in CMOS bulk technologies,such as STI, dummy MOS gate or SBL, can be readily applied to FinFETtechnologies accordingly.

FIG. 6(b 0 a) shows a 3D perspective view of an active-region fuse 45′constructed from fin structures 31′-1, 31′-2, and 31′-3 according to oneembodiment. Fins 31′-1, 31′-2, and 31′-3 t have P+ implant in an Nwell39′ and on an Nwell silicon or SOI substrate 35′. The dash lines areboundaries between the P+ implant regions and the Nwell 39′. The fuseconstructed from fin 31′-2 is a P+ active-region fuse built on Nwell39′. The middle fin 31′-2 has two contacts 33′ and 34′ to act as twoterminals of the fuse element. Because of tall and slim silicon islandin a FinFET technology, the heat generated on the surface of the fin dueto silicide can not dissipate very well so that a fin itself can be usedas an electrical fuse effectively in one embodiment.

In an advanced CMOS process when the horizontal dimensions (parallel tosilicon surface) are scaled more aggressively than the verticaldimension (perpendicular to silicon surface), an active-region fuse canbe constructed from planar CMOS too. Similarly, an active-region fusecan be constructed from a DRAM process when the interlayer dielectricsare very thick. FIG. 6(b 0 b) shows a 3D perspective view of anactive-region fuse 45″ in a planar CMOS. The shaded area 40″ is an oxideisolation, i.e. STI. The active region is the hallow area (shown by wireframes) surrounded by STI 40″ The active region has P+ implant 38″ overNwell 36″ on top of a substrate 35″ that can be Nwell in bulk or oxideisolation in SOI. The active region has two contacts 33″ and 34″′ toserve as two terminals of an electrical fuse. Because of deep STIisolation, the heat generated on the surface of the P+ active region dueto silicide can not be dissipated very well so that the P+ active regioncan be used as an electrical fuse effectively in one embodiment.

A dummy-gate diode (as known as “gated diode”) in a FinFET technology asshown in FIG. 6(b) is one embodiment to build good-performance diodes.The gate in a gated diode can be removed to form a new kind of diode,called channel diode, in a gate-last metal-gate process without anyadditional masks or process steps. The channel diode can be constructedwith the source and drain of a MOS as anode and cathode of a diode,respectively, while the gate is removed.

Metal gate in a high-K metal-gate process can not sustain hightemperature source/drain annealing process. Therefore, there is agate-last or Replacement Metal Gate (RMG) process to over come thethermal budget issues. The gate-last metal-gate process follows theconventional polysilicon-gate process from gate formation/definition,LDD implants, and source/drain implants. After the source/drainimplants, wafers are under high temperature to anneal the damage fromhigh energy and high dose source/drain implants. Then, the polysilicongates are removed and replaced with high-K dielectrics (e.g., HfO2),work function metals (e.g., TiN, TaN, etc.) and gate filler (e.g. AlCo,AlNi alloy). A high-performance diode can be created with thepolysilicon gate removed and without any metal-gate built. With properlogic operation in the mask generation, no additional masks are needed.

FIG. 6(b 1 a)-6(b 1 e) shows device cross sections of building channeldiode and MOS in a portion of process steps, according to oneembodiment. FIG. 6(b 1 a) shows device cross sections 600, along theline A-A′ as shown in FIG. 6(b), after polysilicon definition. Channeldiode 640 has a fin structure 610, a polysilicon gate 612, and a fieldoxide 670. MOS 690 has a fin structure 620, a polysilicon gate 622, anda field oxide 670. FIG. 6(b 1 b) shows device cross sections after LDDimplant 675 on the MOS device. The LDD mask has opening only over theMOS device 690, but not channel diode 640. Logic operations can be usedto block LDD mask on channel diode 640, otherwise LDD mask tends to begenerated automatically. FIG. 6(b 1 c) shows device cross sections afterspacer formation and source/drain implant. MOS 690 has the samesource/drain implant 680 on source/drain, while the channel diode 640has different source/drain implant 680 and 680′ on the two source/drainto create anode and cathode of the diode. The channels in the MOS 690and channel diode 640 can have lighter or near intrinsic implants. Asmall region near the polysilicon gate in the MOS 690 still has LDDimplant, as protected by oxide spacers from source/drain implants. FIG.6(b 1 d) shows device cross sections after the polysilicon gates aremoved for MOS 690 and channel diode 640. FIG. 6(b 1 e) shows devicecross sections after a replacement metal gate is built on MOS 690 butnot on channel diode 640, by using the LDD mask for differentiation. Bycustomizing the LDD implant mask, a channel diode can be built in agate-last CMOS process without any additional masks or process steps.The channel diode can be readily applied to replacement metal-gatetechnologies for FinFET, planar, bulk, or SOI CMOS in other embodiments.The breakdown voltage of the channel diode can be adjusted by changingthe polysilicon width for different applications, such as ESD, analog,or memory chips, etc.

FIGS. 6(a), 6(a 1)-6(a 4), 6(b) and 6(b 1 a-b 1 e) shows various schemesof constructing diodes as program selector and/or OTP element in a fullyor partially isolated active region. A diode as program selector can beconstructed from an isolated active region such as in SOI or FINFETtechnologies. The isolated active region can be used to construct adiode with two ends implanted with P+ and N+, the same implants as thesource/drain implants of CMOS devices, to serve as two terminals of adiode. A dummy CMOS gate or silicide block layer (SBL) can be used forisolation and to prevent shorting of the two terminals. In the SBLisolation, the SBL layer can overlap into the N+ and P+ implant regionsand the N+ and P+ implant regions can be separated with a space. Thewidth and/or the doping level in the space region can be used to adjustthe diode's breakdown voltage or leakage current accordingly. A fuse asOTP element can also be constructed from an isolated active region.Since the OTP element is thermally isolated, the heat generated duringprogramming cannot be dissipated easily so that the temperature can beraised higher to accelerate programming. The OTP element can have all N+or all P+ implant. If there is a silicide on top of the active region,the OTP element can have part N+ and part P+ implants so that the OTPelement can behave like a reverse biased diode during read, such as whenthe silicide is depleted after OTP programming in one embodiment. Ifthere is no silicide on top, the OTP element can have part N+ and partP+ implants as a diode to be breakdown during OTP programming in anotherembodiment. In either case, the OTP element or diode can be constructedon the same structure of an isolated active region to save area. In anSOI or FinFET SOI technology, an active region can be fully isolatedfrom the substrate and from other active regions by SiO2 or similarmaterial. Similarly, in a FINFET bulk technology, active regions in thefin structures built on the same silicon substrate are isolated fromeach other above the surface that can be coupled together by usingextended source/drain regions.

If a programmable resistance device cell uses a diode as selector forread, the read path may contain a diode's threshold voltage (˜0.7V) sothat read voltage cannot be lower. One embodiment to resolve this issueis to use a MOS as a read selector. FIGS. 6(c 01)-6(c 7) depict severalembodiments of using MOS as read selector for low voltage operation.

FIG. 6(c 01) shows a programmable resistive device (PRD) 180 having aprogrammable resistive element (PRE) 181 coupled to an element selector182 and a read selector 183 at one end and coupled to a bitline (BL) inthe other end. The element selector 182 has an enable terminal (EN) andcouples to a source line (SL). The read selector 183 can have a readenable terminal (ENR) and can couple to a read source line (SLR). Theread selector 182 can be built with low-Vt core logic devices instead ofI/O devices typically used in selector 183. During read, the readselector 182 can be turned on by applying low supply voltages to BL,SLR, and ENR so that a current can flow from BL to SLR depending on theresistance state of PRE 181. This current can be compared with areference current to determine the resistance state of the PRE 181 intoa logic state of 0 or 1.

FIG. 6(c 02) shows a block diagram of a programmable resistive device(PRD) 180′ having a programmable resistive element (PRE) 181′ coupled toan element selector 182′ and a read selector 183′ at one end and coupledto a bitline (BL) in the other end. The element selector 182′ can be aMOS built by I/O thick oxide device that has an enable terminal (EN) andcouples to a source line (SL). The read selector 183′ can have a readenable terminal (ENR) and can couple to a read source line (SLR). Theread selector 183′ can be built with low-Vt core logic devices insteadof I/O devices in selector 182′. During read, the read selector 183′ canbe turned on by applying low supply voltages to BL, SLR, and ENR so thata current can flow from BL to SLR depending on the resistance state ofPRE 181′. This current can be compared with a reference current todetermine the resistance state of the PRE 181′ into a logic state of 0or 1.

FIG. 6(c 03) shows a block diagram of a programmable resistive device(PRD) 180″ having a programmable resistive element (PRE) 181″ coupled toan element selector 182″ and a read selector 183″ at one end and coupledto a bitline (BL) in the other end. The element selector 182″ can be adummy-gate diode built by I/O thick oxide device with Vt (˜0.8V) thatcouples to a source line (SL). The read selector 183″ can have a readenable terminal (ENR) and can couple to a read source line (SLR). Theread selector 183″ can be built with low-Vt (˜0.4V) core logic devicesinstead of I/O devices as typically used in element selector 182″.During read, the read selector 183″ can be turned on by applying lowsupply voltages (˜1.0V) to BL, SLR, and ENR so that a current can flowfrom BL to SLR depending on the resistance state of PRE 181″. Thiscurrent can be compared with a reference current to determine theresistance state of the PRE 181″ into a logic state of 0 or 1. Thethick-oxide I/O device 182″ can be programmed with a higher voltage of2-3V. But, without the low-Vt core logic device 183″, the PRD cell maynot be read with ˜1.0V supply voltage. In some applications, low voltageread is more important than programming, especially for OTP.

FIGS. 6(c 01)-6(c 03) illustrate programmable resistive devices havingread selectors 183, 183′, and 183″, respectively, built by core logicdevices so that the read selectors can be turned on in low supplyvoltages. The programmable resistive element, such as 181 in FIG. 6(c01), can be a One-Time Programmable (OTP), Multiple-Time Programmable(MTP), embedded flash, or emerging memories, such as PCM, RRAM, or MRAM,etc. In particular, an oxide breakdown anti-fuse can be one example ofOTP as PRE 181 in FIG. 6(c 01). The breakdown voltage of an anti-fusecan be 4-5V even in 40 nm or 28 nm CMOS. To select an anti-fuse as a PRE181 for program, the element selector 182 is normally built in thickoxide I/O device to sustain high programming voltage of 4-5V. The I/Odevice has a higher threshold voltage, ˜0.7V, such that a low supplyvoltage of 0.7V or below may not turn on the element selector 182 forread. Therefore, a read selector 183 built by core logic device (e.g.Vt-0.4V) can serve the purpose. To prevent stressing the core logicdevice in the read selector 183, ENR or SLR can be let floating duringprogramming in one embodiment. The read selector 183 can be configuredas MOS-connected diode mode (ENR connected to drain of 183) or linearmode (ENR connected to a supply voltage) for read in another embodiment.The element selector 182 and/or read selector 183 can be built in NMOSor PMOS in different embodiments. The element selector 182 can be acombination of core logic MOS, I/O MOS and/or diode in anotherembodiment. The element selector 182 and/or 183 can be built withSchottky diode for low voltage program or read in yet anotherembodiment.

FIG. 6(c 1) shows a programmable resistive device cell 75 for lowvoltage and low power applications. If an I/O voltage supply of a chipcan be down to 1.2V, the diode's high turn-on voltage 0.7V asread/program selector can restrict the read margin. Therefore, a MOS canbe used as read selector in the cell for low voltage read according toanother embodiment. The programmable resistive cell 75 has aprogrammable resistive element 76, a diode 77 as program selector, and aMOS 72 as read selector. The anode of the diode 77 (node N) is coupledto the drain of the MOS 72. The cathode of the diode 77 is coupled tothe source of the MOS 72 as Select line (SL). The gate of the MOS 72 canbe coupled to wordline bar (WLB) for read. The programmable resistiveelement 76 is coupled between a node N and a high voltage V+, which canserve as a Bitline (BL). By applying a proper voltage between V+ and SLfor a proper duration of time, the programmable resistive element 76 canbe programmed into high or low resistance states, depending on magnitudeand/or duration of voltage/current. The diode 77 can be a junction diodeconstructed from a P+ active region and an N+ active region on the sameN well as the P and N terminals of a diode, respectively. In anotherembodiment, the diode 77 can be a diode constructed from a polysiliconstructure with two ends implanted by P+ and N+, respectively. The P or Nterminal of either junction diode or polysilicon diode can be implantedby the same source or drain implant in CMOS devices. Either the junctiondiode or polysilicon diode can be built in standard CMOS processeswithout any additional masks or process steps. The MOS 72 is for readingthe programmable resistive device. Turning on a MOS can have a lowervoltage drop between the source and the drain than a diode's turn-onvoltage for low voltage operations. To turn on the diode 77 forprogramming, the cathode of the diode can be set to low for the selectedrow during write, i.e. ˜(Wr*Sel) in one embodiment. To turn on the MOS72, the gate of the MOS can be set to low for the selected row duringread, i.e. ˜(Rd*Sel) in one embodiment. If the program voltage isVDDP=2.5V, the selected and unselected SLs for program can be 0 and2.5V, respectively. The SLs can be all set to 1.0V for read. Theselected and unselected WLBs for read are 0 and 1.0V, respectively. Theprogrammable resistive memory cell 75 can be organized as atwo-dimensional array with all V+'s in the same columns coupled togetheras bitlines (BLs) and all MOS gates and sources in the same rows coupledtogether as wordline bars (WLBs) and Source Lines (SLs), respectively.

FIG. 6(c 2) shows a schematic of another programmable resistive cellaccording to another embodiment. FIG. 6(c 2) is similar to FIG. 6(c 1)except that the placement of the resistive element and diode/MOS areinterchanged. V+'s of the cells in the same row can be coupled to asource line (SL) that can be set to VDDP for program and VDD for read.V−'s of the cells in the same column can be coupled as a bitline (BL)and further coupled to a sense amplifier for read and set to ground forprogram. The gates of the MOS in the same row can be coupled to awordline bar (WLB) that can be set to low when selected during read,i.e. ˜(Rd*Sel), in one embodiment.

FIG. 6(c 3) shows a schematic of another programmable resistive cellaccording to another embodiment. FIG. 6(c 3) is similar to FIG. 6(c 1)except that the PMOS is replaced by an NMOS. V+'s of the cells in thesame column can be coupled as a bitline (BL) that can be coupled to VDDPfor program and coupled to a sense amplifier for read. The cathodes ofthe diode and the sources of the MOS in the same row can be coupled as asource line (SL). The SL can be set to ground when selected for read orprogram. The gates of the MOS in the same row can be coupled as awordline (WL) that can be set high when selected for read, i.e., Rd*Sel,in one embodiment.

FIG. 6(c 4) shows a schematic of using at least one PMOS configured asdiode or MOS for program or read selector according to one embodiment.The programmable resistance device cell 170 has a programmable resistiveelement 171 coupled to a PMOS 177. The PMOS 177 has a gate coupled to aread wordline bar (WLRB) and a drain coupled to a program wordline bar(WLPB), a source coupled to the programmable resistive element 171, anda bulk coupled to the drain. The PMOS 177 can have the source junctionconducted to behave like a diode for the selected cells duringprogramming. The PMOS 177 can also have the source junction or thechannel conducted to behave like a diode or MOS selector, respectively,during read.

FIG. 6(c 5) shows a cross section of the cell in FIG. 6(c 4) to furtherillustrate the program and read path using at least one PMOS as aselector configured as diode or MOS for program or read selectoraccording to one embodiment. The programmable resistive device cell 170′has a programmable resistive element 171′ coupled to a PMOS thatconsists of a source 172′, gate 173′, drain 174′, N well 176′, and Nwell tap 175′. The PMOS has a special conduction mode that is hard tofind in the ordinary CMOS digital or analog designs by pulling the drain174′ to a very low voltage (e.g., ground) to turn on the junction diodein the source 172′ for programming as shown in a dash line. Since thediode has an I-V characteristic of exponential law than square law inMOS, this conduction mode can deliver high current to result in smallercell size and low program voltage. The PMOS can be turned on during readto achieve low voltage read.

The operation conditions of the cells in FIGS. 6(c 4) and 6(c 5) arefurther described in FIGS. 6(c 6) and 6(c 7) to illustrate the noveltyof the particular cells. FIG. 6(c 6) shows operation conditions ofprogramming and reading by diode. During programming, the selected cellcan have WLPB coupled to a very low voltage (i.e. ground) to turn on thesource junction diode, while the WLRB can be either coupled to VDDP, theprogram voltage, or ground. The WLPB and WLRB of the unselected cellscan be both coupled to VDDP. During reading, the selected cell can havethe WLRB coupled to VDD core voltage or ground and the WLPB coupled toground to turn on the source junction diode of PMOS 171 in FIG. 6(c 4).The WLPB and WLRB of the unselected cells are coupled to VDD. FIG. 6(c7) shows the operation conditions of programming and reading by MOS. Theoperation conditions in this figure are similar to those in FIG. 6(c 6)except that the WLRB and WLPB of the selected cells are coupled to 0 andVDD/VDDP, respectively, during read/program. Thus, the PMOS is turned onduring programming or reading. The PMOS can be drawn in a layout like aconventional PMOS, but the operation voltages applied to the PMOSterminals are quite different from conventional operations. In otherembodiments, combinations of diode and/or MOS for programming or readcan be achieved, such as programming by diode and reading by MOS in oneembodiment or programming by diode and MOS in different currentdirections for different data in another embodiment, for example.

In a Silicon-On-Isolator (SOI) technology, the selectors configured asmerged devices can be further elaborated as diode/MOS or bipolar/MOS.FIG. 6(c 8) shows a top view of a programmable resistive device (PRD)cell 630 built in an SOI technology. The PRD cell 630 has a gate 631over an active region 634 and divides the active region 634 into leftand right portions. The left active region is covered by a P+ implant636 and the right active region is covered by an N+ implant 635 on topand a P+ implant 636 in the bottom. The left, top right, and bottomright portions of the active region 634 can be coupled to contacts 638,637, and 641, respectively. The gate 631 can be coupled to a contact632. The contacts 638, 632, and 637 constitute the anode, dummy gate,and cathode terminals of a dummy-gate diode. The contacts 638, 632, and641 constitute the drain, gate, and source terminal of a PMOS device.The contacts 637 and 641 can be coupled together by metal or by silicideon top of the active region 634 as a single node. In essence, onedummy-gate diode and a PMOS are merged as a single selector in the PRDcell 630. The active region 634 can have an extension in the rightportion as a fuse, according to one embodiment. The fuse can have acontact 639 as a terminal of the fuse. The coupling of the mergeddevices and the fuse can be interchangeable in another embodiment. TheMOS can be an NMOS in yet another embodiment. FIG. 6(c 8 a) shows aschematic of a PRD cell, corresponding to the PRD cell 630 in FIG. 6(c8).

FIG. 6(c 9) shows a top view of a programmable resistive device (PRD)cell 630′ built in an SOI technology. The PRD cell 630′ has a gate 631′over an active region 634′ and divides the active region 634′ into left,right, and bottom portions. The left and right active region is coveredby a P+ implant 636′ and the bottom active region is covered by an N+implant 635′. The left, right, and bottom portions of the active region634′ can be coupled to contacts 638′, 637′, and 633′, respectively. Thegate 631′ can be coupled to a contact 632′. The contacts 638′, 633′, and637′ constitute the emitter, base, and collector terminals of a PNPbipolar device. The contacts 638′, 632′, and 637′ and 633′ alsoconstitute the drain, gate, source, and bulk terminal of a PMOS device.In essence, one PNP bipolar and a PMOS are merged as a single selectorin the PRD cell 630′. The active region 634′ can have an extension inthe right portion as a fuse, according to one embodiment. The fuse canhave a contact 639′ as a terminal of the fuse. The coupling of themerged devices and the fuse can be interchangeable in anotherembodiment. The MOS can be an NMOS in yet another embodiment. FIG. 6(c 9a) shows a schematic of a PRD cell, corresponding to the PRD cell 630′in FIG. 6(c 9).

FIG. 6(c 9 b) shows a top view of a merged bipolar/PMOS, correspondingto the PNP and PMOS in FIG. 6(c 9 a), according to one embodiment. Themerged PNP bipolar and PMOS 630″ has 2 rows and 2 columns of gates 632″dividing an active region 634″ into 9 regions. A P+ implant 636″ coversthe central and 4 sides regions, while an N+ implant 635″ covers the 4corner regions. Contact 638″, 633″, and 636″ in the central, corner, andside regions serve as terminals of an emitter, base, and collector ofthe bipolar 630″, respectively. With this configuration, the gain of thebipolar 630″ can be very high, ˜100, so that programming efficiency canbe greatly improved over the bipolar in FIG. 6(c 9). There are also 4PMOS devices built between emitter 638″ and collector 636″ that can beturned on during programming or reading by coupling the gate 632″ to alow supply voltage.

There are many different combinations of operation modes for the mergeddevices in FIGS. 6(c 8)-6(c 9 b). The selector can be configured as MOS,such as NMOS or PMOS, or bipolar, such as PNP or NPN, or diode. Thediode can have N or P type region between anode and cathode. The orderof the merged device and PRD can be interchangeable. The selector can beconfigured as a diode or bipolar to supply large current forprogramming, or reading in one embodiment. The selector can also beconfigured as a MOS to reduce supply voltage requirement for reading, orprogramming in another embodiment. There are many variations and yetequivalent embodiments and they all fall within the scope of thisinvention for those skilled in the art.

FIG. 6(d 1) shows a top view of a programmable resistive device (PRD)cell 730 built on a thermally insulated substrate, such as SOI orpolysilicon. In a thermally insulated substrate the heat conductivity ispoor such that the programmable resistive element (PRE) can be sharedwith the gate of a program selector and still keeps high programefficiency. The cell 730 has a PRE with body 731, anode 732, and cathode733. The body 731 of the PRE is also the gate of a dummy-gate diodeincluding an active region 734, a cathode with an N+ implant 735 and acathode contact 737, and an anode with a P+ implant 736 and an anodecontact 738. The cathode 733 of the PRE is coupled to the anode of thedummy-gate diode by a metal 739.

FIG. 6(d 2) shows a top view of a programmable resistive device (PRD)cell 730′ built on a thermally insulated substrate, such as SOI orpolysilicon. In a thermally insulated substrate the heat conductivity ispoor such that the programmable resistive element (PRE) can be sharedwith the gate of a program selector and still keeps high programefficiency. The cell 730′ has a PRE with body 731′, anode 732′, andcathode 5733′. The body 731′ of the PRE is also the gate of a MOSincluding an active region 734′, a drain with a drain contact 737′covered by an N+ implant 735′ and a source with a contact 738′ coveredby a P+ implant 736′. The cathode 733′ of the PRE is coupled to thesource contact 738′ of the MOS by a metal 739′. The PRD cell 730′ can beprogrammed or read by turning on the source junction diode of the MOS,similar to the operations from FIG. 6(c 4)-6(c 7).

The PRD cells 730 and 730′ shown in FIGS. 6(d 1) and 6(d 2) are forillustrative purposes. The thermally insulated substrate can be aSilicon-On-Insulator (SOI) or a polysilicon substrate. The active areacan be silicon, Ge, SiGe, III-V, or II-VI semiconductor material. ThePRE can be an electrical fuse (including anti-fuse), PCM thin film, RRAMfilm, etc. The PRE can be built with heat sink as shown in FIGS. 7(a 2),7(a 3 a)-7(a 3 c), heat source as shown in FIG. 7(a 3) or 7(a 3 d), orextended area as shown in FIG. 7(a 3 e)-7(a 3 g). The program selectorcan be a diode or a MOS. The MOS selector can be programmed or read byturning on a MOS channel or a source junction. There are manycombinations and equivalent embodiments of this concept and they allfall within the scope of this invention for those skilled in the art.

FIG. 7(a) shows a top view of an electrical fuse element 88 according toone embodiment. The electrical fuse element 88 can, for example, be usedas the resistive element 31 a illustrated in FIG. 5(a). The electricalfuse element 88 includes an anode 89, a cathode 80, and a body 81. Inthis embodiment, the electrical fuse element 88 is a bar shape with asmall anode 89 and cathode 80 to reduce area. In another embodiment, thewidth of the body 81 can be about the same as the width of cathode oranode. The width of the body 81 can be very close to the minimum featurewidth of the interconnect. The anode 89 and cathode 80 may protrude fromthe body 81 to make contacts. The contact number can be one (1) for boththe anode 89 and the cathode 80 so that the area can be very small.However, the anode 89 or cathode 80 can have any shapes or differentarea ratio in one embodiment. In other embodiments, the area ratio ofthe anode 89 to cathode 80 or cathode 80 to anode 89 can be between 2 to4. In other words, the electrical fuse can be asymmetrical betweencathode and anode, and/or between the left and right parts of the fusein FIG. 7(a). In one embodiment, the fuse body 81 can have about 0.5-8squares, namely, the length to width ratio is about 0.5-to-8, to makeefficient use of (e.g., optimize) cell area and program current. In oneembodiment, the fuse body 81 can have about 2-6 squares, namely, thelength to width ratio is about 2-to-6, to efficiently utilize cell areaand program current. In yet another embodiment, the narrow fuse body 81can be bent (such as 45, 90, or any degrees) to make the length longerbetween the width of anode and cathode areas to utilize cell area moreefficiently. The fuse element 88 has a P+ implant 82 covering part ofthe body 81 and the cathode 80, while an N+ implant over the rest ofarea. This embodiment makes the fuse element 88 behave like a reversebiased diode to increase resistance after being programmed, such as whensilicide on top is depleted by electro-migration, ion diffusion,silicide decomposition, and other effects. The fuse element 88 can alsohave a portion of NMOS gate and another portion of PMOS gate in ametal-gate process placed in any order of the current flowingdirections. NMOS and PMOS gates can have different material compositionto create stress so that fuse programming can be easier. It is desirableto make the program voltage compatible with the I/O voltages, such as3.3V, 2.5V, or 1.8V, for ease of use without the needs of buildingcharge pumps. The program voltage pin can also be shared with at leastone of the standard I/O supply voltage pins. In one embodiment, to makethe cell small while reducing the contact resistance in the overallconduction path, the number of contacts in the OTP element or diode canbe no more than two (<=2), in a single cell. Similarly, in anotherembodiment, the contact size of the OTP element or diode can be largerthan at least one contact outside of the memory array. The contactenclosure can be smaller than at least one contact enclosure outside ofthe memory array in yet another embodiment.

FIG. 7(a 1) shows a top view of an electrical fuse structure 88′ with asmall body 81′-1 and at least one slightly tapered structures 81′-2and/or 81′-3 according to another embodiment. The electrical fuseelement 88′ can, for example, be used as the resistive element 31 aillustrated in FIG. 5(a). The electrical fuse element 88′ includes ananode 89′, a cathode 80′, body 81′-1, and tapered structures 81′-2 and81′-3. The body 81′-1 can include a small rectangular structure coupledto at least one tapered structures 81′-2 and/or 81′-3, which are furthercoupled to cathode 80′ and anode 89′, respectively. The length (L) andwidth (W) ratio of the body 81′-1 is typically between 0.5 and 8. Inthis embodiment, the electrical fuse element 88′ is substantially a barshape with a small anode 89′ and cathode 80′ to reduce area. The anode89′ and cathode 80′ may protrude from the body 81-1′ to make contacts.The contact number can be one (1) for both the anode 89′ and the cathode80′ so that the area can be very small. The contact can be larger thanat least one contact outside of the memory array in another embodiment.The contact enclosure can be smaller than at least one contact enclosureoutside of the memory array in yet another embodiment. P+ implant layer82′ covers part of the body and N+ implant layer (the complement of P+)covers the other part so that the body 81′-1 and taped structure 81′-2can behave like a reverse biased diode to enhance resistance ratioduring read, such as when silicide on top is depleted after program.

FIG. 7(a 2) shows a top view of an electrical fuse element 88″ accordingto another embodiment. The electrical fuse element 88″ is similar to theone shown in FIG. 7(a) except using a thermally conductive butelectrically insulated heat sink coupled to the anode. The electricalfuse element 88″ can, for example, be used as the resistive element 31 aillustrated in FIG. 5(a). The electrical fuse element 88″ can include ananode 89″, a cathode 80″, a body 81″, and an N+ active region 83″. TheN+ active region 83″ on a P type substrate is coupled to the anode 89″through a metal 84″. In this embodiment, the N+ active region 83″ iselectrically insulated from the conduction path (i.e. N+/P sub diode isreverse biased) but thermally conductive to the P substrate that canserve as a heat sink. In other embodiment, the heat sink can be coupledto the anode 89″ directly without using any metal or interconnect, andcan be close to or underneath the anode. The heat sink can also becoupled to the body, cathode, or anode in part or all of a fuse elementin other embodiments. This embodiment of heat sink can create a steeptemperature gradient to accelerate programming.

FIG. 7(a 3) shows a top view of an electrical fuse element 88′″according to another embodiment. The electrical fuse element 88′″ issimilar to the one shown in FIG. 7(a) except a thinner oxide region 83′″which serves as a heat sink underneath the body 81″ and near the anode89′″. The electrical fuse element 88′″ can, for example, be used as theresistive element 31 a illustrated in FIG. 5(a). The electrical fuseelement 88′″ includes an anode 89′″, a cathode 80′″, a body 81′″, and anactive region 83′″ near the anode 89′″. The active region 83′″underneath the fuse element 81′″ makes the oxide thinner in the areathan the other (i.e., thin gate oxide instead of thick STI oxide). Thethinner oxide above the active region 83′″ can dissipate heat faster tocreate a temperature gradient to accelerate programming. In otherembodiments, the thin oxide area 83′″ can be placed underneath thecathode, body, or anode in part or all of a fuse element as a heat sink.

FIG. 7(a 3 a) shows a top view of an electrical fuse element 198according to another embodiment. The electrical fuse element 198 issimilar to the one shown in FIG. 7(a) except thinner oxide regions 193are placed in two sides of the anode 199 as another form of heat sink.The electrical fuse element 198 can, for example, be used as theresistive element 31 a illustrated in FIG. 5(a). The electrical fuseelement 198 includes an anode 199, a cathode 190, a body 191, and anactive region 193 near the anode 199. The active region 193 underneaththe anode 199 makes the oxide thinner in the area than the other (i.e.,thin gate oxide instead of thick STI oxide). The thinner oxide above theactive region 193 can dissipate heat faster to create a temperaturegradient to accelerate programming. In other embodiment, the thin oxidearea can be placed underneath the cathode, body, or anode in part or inall of a fuse element as a heat sink in one side, two sides, or anysides.

FIG. 7(a 3 b) shows a top view of an electrical fuse element 198′according to another embodiment. The electrical fuse element 198′ issimilar to the one shown in FIG. 7(a) except thinner oxide regions 193′are placed close to the anode 199′ as another form of heat sink. Theelectrical fuse element 198′ can, for example, be used as the resistiveelement 31 a illustrated in FIG. 5(a). The electrical fuse element 198′includes an anode 199′, a cathode 190′, a body 191′, and an activeregion 193′ near the anode 199′. The active region 193′ close to theanode 199′ of the fuse element 198′ makes the oxide thinner in the areathan the other (i.e., thin gate oxide instead of thick STI oxide) andcan dissipate heat faster to create a temperature gradient to accelerateprogramming. In other embodiment, the thin oxide area can be placed nearto the cathode, body, or anode of a fuse element in one, two, three,four, or any sides to dissipate heat faster. In other embodiments, therecan be at least one substrate contact coupled to an active region, suchas 193′, to prevent latch-up. The contact pillar and/or the metal abovethe substrate contact can also serve as another form of heat sink.

FIG. 7(a 3 b 1) shows a top view of an electrical fuse element 178according to another embodiment. The electrical fuse element 178 issimilar to the one shown in FIG. 7(a) that has two ends 170 and 179,respectively, and a body 171 coupled between the two ends 170 and 179.The fuse body 171 also has another interconnect 173 underneath to createsteps when the body 171 crosses the interconnect 173. The steps can thindown the fuse body 171 in the side walls to make electromigration easierto happen. The interconnect 173 can be made of other layers ofinterconnect processed before the fuse material. For example, if thefuse 178 can be made of 4th layer of metal, the interconnect can be1^(st), 2^(nd), 3^(rd) layer of metal or MOS gate, or some combinationthereof. The number of crosses can be more than one.

FIG. 7(a 3 b 1) shows a fuse 178 having two ends 170 and 179,respectively, and a fuse body coupled to two ends 170 and 179. The fusebody 171 has one bending to create current crowding to aidelectromigration for programming. The bending can be more than once inthe fuse body in another embodiment. The bending can be any angles,instead of 90-degree as shown in FIG. 7(a 3 b 1), or with rounding inthe corners. The bending and the interconnect underneath can be embodiedseparately or combined to make fuse programming easier. There are manyvariations and yet equivalent embodiments of the inventions as shown inFIG. 7(a 3 b 1) and they all fall into the scope of the same inventionsfor those skilled in the art.

FIG. 7(a 3 c) shows a top view of an electrical fuse element 198″according to yet another embodiment. The electrical fuse element 198″ issimilar to the one shown in FIG. 7(a) except having a heat sink 195″ inthe cathode. The electrical fuse element 198″ can, for example, be usedas the resistive element 31 a illustrated in FIG. 5(a). The electricalfuse element 198″ includes a cathode 199″, an anode 190″, a body 191″,and a heat sink 195″. In one embodiment, the heat sink area can be onlyone side, instead of two sides to fit into small cell space, and/or thelength can be longer or shorter. In another embodiment, the heat sinkarea can be a portion of anode or body in one side or two sides. In yetanother embodiment, the length to width ratio of a heat sink area can belarger than 0.6 or larger than minimum requirement by design rules.

FIG. 7(a 3 d) shows a top view of an electrical fuse element 198′″according to yet another embodiment. The electrical fuse element 198′″is similar to the one shown in FIG. 7(a) except a heater 195′″ iscreated near the cathode. The electrical fuse element 198′″ can, forexample, be used as the resistive element 31 a illustrated in FIG. 5(a).The electrical fuse element 198′″ includes an anode 199′″, a cathode190′″, a body 191′″, and high resistance area 195′″ which can serve as aheater. The high resistance area 195′″ can generate more heat to assistprogramming the fuse element. In one embodiment, the heater can be anunsilicided polysilicon or unsilicided active region with a higherresistance than the silicided polysilicon or silicided active region,respectively. In another embodiment, the heater can be a single or aplurality of contact and/or via in serial to contribute more resistanceand generate more heat along the programming path. In yet anotherembodiment, the heater can be a portion of high resistance interconnectto provide more heat to assist programming. The heater 195″″ can beplace to the cathode, anode, or body, in part or all of a fuse element.Active region 197″ has a substrate contact to reduce latch-up hazards.The contact pillar in the active region 197″ can also act as a heatsink.

FIG. 7(a 3 e) shows a top view of an electrical fuse element 298according to yet another embodiment. The electrical fuse element 298 issimilar to the one shown in FIG. 7(a) but further includes an extendedregion 295 in a cathode portion. The electrical fuse element 298 can,for example, be used as the resistive element 31 a illustrated in FIG.5(a). The electrical fuse element 298 includes a cathode 299, an anode290, a body 291, and an extended cathode region 295. In otherembodiments, the extended cathode area can be on only one side of thebody 291, for small cell size, and/or the length of the extended cathodestructures can be longer or shorter. More generally, however, theextended cathode region 295 is referred to as an extended area. That is,the extended cathode region 295 is one example of an extended area. Inanother embodiment, the extended area can be a portion of anode or bodyin one side or two sides. In yet another embodiment, the length to widthratio of an extended area can be larger than 0.6. The extended areameans any additional area longer than required by design rules andcoupled to an anode, cathode, or body that has reduced or no currentflowing therethrough to assist with programming.

FIG. 7(a 3 f) shows a top view of an electrical fuse element 298′ withan extended area in a cathode portion according to another embodiment.The electrical fuse 298′ has a cathode 299′, an anode 290′ and a body291′. The cathode 299′ has an extended cathode area 295′ near to and onone or two sides of the body 291′ to assist (e.g., accelerate)programming. The extended area 295′ are pieces of fuse element thatextend beyond nearest cathode and anode contacts and are longer thanrequired by design rules. The anode contact 290′ in the electrical fuseelement 298′ is also borderless, namely, the contact is wider than theunderneath fuse element. In another embodiment, the cathode contact canbe borderless and/or the anode portion can have extended area.

FIG. 7(a 3 g) shows a top view of an electrical fuse element 298″according to another embodiment. The electrical fuse 298″ has a cathodecontact 299″, an anode 290″ and a body 291″. The cathode 299″ hasextended areas 295″, and contacts 299″ near to and on two sides of thebody 291″ to accelerate programming. The extended areas 295″ aresegments of fuse element that extend beyond the cathode or anode contactwith reduced or substantially no current flowing through and/or arelonger than required by design rules. The extended area 295″ can havethe length to width ratio in the current flowing path of larger thanrequired by design rules, or larger than 0.6, for example. The anode290″ has a shared contact 296″ to interconnect the fuse element 291″with an active region 297″ in a single contact 296″ with a piece ofmetal 293″ on top. The extended area can be near to one side of the body291″ and/or attached to cathode or anode in other embodiment. In anotherembodiment, the extended area can be straight or bent more than once tosave area. In yet another embodiment, the anode can have an extendedarea and/or the cathode can have a shared contact.

A heat sink can be used to create a temperature gradient to accelerateprogramming. The heat sink as shown in FIGS. 7(a 2), 7(a 3 a)-7(a 3 c)are for illustrative purposes. A heat sink can be a thin oxide areaplaced near, underneath, or above the anode, body, or cathode of a fuseelement in one, two, three, four, or any sides to dissipate heat faster.A heat sink can be an extended area of the anode, body, or cathode of afuse element to increase heat dissipation area. A heat sink can also bea single or a plurality of conductors coupled to (i.e., in contact or inproximity) the anode, body, or cathode of a fuse element to dissipateheat faster. A heat sink can also be a large area of anode or cathodewith one or more contact/via to increase heat dissipation area. A heatsink can also be an active region and/or with at least one contactpillar built above an active region near the cathode, body, or anode ofthe fuse element to dissipate heat faster. In an OTP cell that has ashared contact, i.e., using a metal to interconnect MOS gate and activeregion in a single contact, can be considered as another embodiment of aheat sink for MOS gate to dissipate heat into the active region faster.

Extended areas as shown in FIGS. 7(a 3 e)-7(a 3 g) are portions of fuseelement beyond a contact or via that is longer than required by designrules and has reduced or no substantial current flowing therethroughsuch that programming can be accelerated. An extended area (which canbend 45 or 90 degrees and can include one or more separate components)can be placed to one, two, or any side of the anode, cathode, or body ofa fuse element. An extended area can also act as a heat sink todissipate more heat. Heat sink and extended area are based on twodifferent physical properties to accelerate programming, though theembodiments in structure can be very similar. An extended area can actas a heat sink, but not the other way around. It should also beunderstood that the various embodiments can be used separate or in anycombinations.

With a heat sink, the thermal conduction (i.e. heat loss) of a fuseelement can be increased from 20% to 200% in some embodiments.Similarly, a heat generator can be used to create more heat to assistprogramming the fuse element. A heater, such as 83′″ in FIG. 7(a 3) or195′″ in FIG. 7(a 3 d), can usually be a high resistance area placed onor near the cathode, body, or anode in part or all of a fuse element togenerate more heat. A heater can be embodied as a single or a pluralityof unsilicided polysilicon, unsilicided active region, a single or aplurality of contact, via, or combined, or a single or a plurality ofsegment of high resistance interconnect in the programming path. Theresistance of the heat generator can be from 8Ω to 200Ω, or moredesirably from 20Ω to 100Ω, in some embodiments.

The fuse element with heat sink, heat generator, or extended area can bemade of polysilicon, silicided polysilicon, silicide, polymetal, metal,metal alloy, metal gate, local interconnect, metal-0, thermally isolatedactive region, or CMOS gate, etc. There are many variations orcombinations of variations and yet equivalent embodiments of heat sinksto dissipate heat, heat generators to provide more heat, and/or extendedarea to assist programming and that they are all within the scope ofthis invention.

FIG. 7(a 4) shows a top view of an electrical fuse element 98′ accordingto another embodiment. The electrical fuse element 98′ is similar to theone shown in FIG. 7(a) except the fuse element has at least one notch inthe body to assist programming. More generally, a target portion of thebody 91′ can be made formed with less area (e.g., thinner), such as anotch. The electrical fuse element 98′ can, for example, be used as theresistive element 31 a illustrated in FIG. 5(a). The electrical fuseelement 98′ can include an anode 99′, a cathode 90′, and a body 91′. Thebody 91′ has at least a notch 95′ so that the fuse element can be easilybroken during programming

FIG. 7(a 5) shows a top view of an electrical fuse element 98″ accordingto another embodiment. The electrical fuse element 98″ is similar to theone shown in FIG. 7(a) except the fuse element is part NMOS and partPMOS metal gates. The electrical fuse element 98″ can, for example, beused as the resistive element 31 a illustrated in FIG. 5(a). Theelectrical fuse element 98″ can include an anode 99″, a cathode 90″, andbodies 91″ and 93″ fabricated from PMOS and NMOS metal gates,respectively. By using different types of metals in the same fuseelement, the thermal expansion can create a large stress to rupture thefuse when the temperature is raised during programming.

FIG. 7(a 6) shows a top view of an OTP element 888 according to anotherembodiment. The OTP element 888 is similar to the one shown in FIG. 7(a)except the OTP element is built with a polysilicon between metal gates.The OTP element 888 can, for example, be used as the resistive element31 a illustrated in FIG. 5(a). The OTP element 888 can include an NMOSmetal gate as anode 889, a PMOS metal gate as cathode 891, and apolysilicon as body 881. In a gate-last or Replacement Metal Gate (RMG)process, polysilicon can be provided and used as place holders for CMOSgates. After high temperature cycles of silicidation and source/drainannealing, the polysilicon gates are etched and replaced by metal gates.Different types of metals can be used for NMOS and PMOS metal gates tosuite NMOS/PMOS threshold voltage requirements. Since use of polysiliconas gates or interconnects are available before being replaced by metalgates, a portion of polysilicon can be preserved by modifying the layoutdatabase with layout logic operations. For example, the N+ and P+implant layers with N well can be used to define NMOS and PMOS in theconventional CMOS. The N+ and P+ layers can be modified with logicoperations as N′+ layer 835 and P′+ layer 838 so that a segment ofpolysilicon 881 can be preserved. The polysilicon as an OTP body 881 canbe implanted by NLDD, PLDD, N+ source/drain, P+ source/drain, orthreshold voltage adjust implants with minimum masks increment. Thepolysilicon 881 can be all N, all P, or part N and part P. The OTPelement can be breakdown by high voltage or high current. In oneembodiment, the polysilicon body can be between the same NMOS or PMOSmetal gates. In another embodiment, the polysilicon body is coupled toneither NMOS nor PMOS metal gate.

FIG. 7(a 7) shows a top view of a diode 888′ according to anotherembodiment. The diode 888′ is similar to the OTP element 888 shown inFIG. 7(a 6) except the OTP body is further divided into N type and Ptype regions to act as a diode. The diode 888′ can, for example, be usedas the resistive element 31 a or program selector 31 b illustrated inFIG. 5(a). The diode 888′ includes an NMOS metal gate as anode 889′, aPMOS metal gate as cathode 891′, and a polysilicon 881′ as body. Thebody 881′ is further divided into three regions 881′-1, 881′-3, and881′-2, covered by modified NLDD′ layer 845′, modified PLDD′ layer 848′,and none, respectively. The layers 845′ and 848′ can be generated fromNLDD and PLDD layers with logic operations so that the areas 881′-1 and881′-3 can receive NLDD and PLDD implants, respectively. The NLDD′ 845′and PLDD′ 848′ can be separated with a space D. The doping concentrationin the space region can be slightly N or P, or unintentionally doped.The width of the space and/or the doping level in the space region canbe used to adjust the diode's breakdown or leakage current. A silicideblock layer (SBL) 885′ can cover the space and overlap into bothregions. The SBL 885′ can be used to block silicide formation to preventthe bodies 881′-1 and 881′-3 from being shorts in one embodiment. Thebodies 881′-1 and 881′-3 are coupled to anode 889′ and 891′,respectively, which serve as the N and P terminals of a diode. The diodecan be used as an OTP element by junction breakdown under forward orreverse bias, or can be used as program selector. The NLDD or PLDD layerin the above discussions are for illustrative purposes. Any layers suchas N+, P+, NLDD, PLDD, high-Resistance, or Vt-adjust implants can beused to construct a diode with minimum masks increment.

FIG. 7(a 8) shows a 3D view of a metal fuse element 910 having two endsA and B, constructed from a contact 911 and a segment of metal1 912according to one embodiment. The metal fuse element 910 has one end Acoupled to a contact 911, which is coupled to a segment of metal1 912.The other end of the metal1 912 is the end B of the metal fuse element910. When a high current flows through the metal fuse element 910, thehigh contact resistance (i.e. 60 ohm in 28 nm CMOS, for example) cangenerate additional Joule heat, to supplement the metal Joule heat, toassist with programming the metal1 912. The spot with the maximumtemperature is marked with a sign of sun.

FIG. 7(a 9) shows a 3D view of another metal fuse element 920 having twoends A and B, constructed from a contact 921, two vias 923 and 925, andsegment(s) of metal1 and metal2. The metal fuse element 920 has one endA coupled to a contact 921, which is further coupled to a metal2 jumper924 through a metal1 922 and a via 923. The metal2 jumper 924 is coupledto a segment of metal1 926 through another via 925. The other end of themetal1 926 is the end B of the metal fuse element 920. The metal2 jumper924 can be referred to as a jumper because it electrically connects thevia 923 with the via 925. The contact 921 and vias 923 and 925 can beused to generate additional heat to assist programming the metal1 926.For example, in an advanced CMOS technologies such as 28 nm, a contactresistance can be 60 ohm and a via resistance can be 10 ohm. By buildingup contacts and vias in series, the resistance in the programming pathcan be increased substantially to generate more Joule heat forprogramming the metal1 926, to supplement the Joule heat generated inmetal1 926 alone. The hot spot is marked with a sign of sun in metal 1926. The location of the hot spot depends on the length ratio of metal2jumper 924 and metal1 926.

FIG. 7(a 10) shows a 3D view of yet another metal fuse element 930having two ends A and B, constructed from three contacts, one metalgate, and two segments of metal1. The metal fuse element 930 has one endA coupled to a contact 931, which is further coupled to a metal-gatejumper 934 through a metal1 jumper 932 and another contact 933. Themetal-gate jumper 934 is coupled to another metal1 936 through anothercontact 935. The other end of the metal1 936 is the end B of the metalfuse element 930. The metal1 jumper 932 can be referred to as a jumperbecause it electrically connects the contact 931 with the contact 933.Also, the metal-gate jumper 934 can be referred to as a jumper becauseit electrically connects the contact 933 with the contact 935. There arethree contacts 931, 933 and 935 being combined in this embodiment togenerate more heat, i.e. 180 ohm if each contact has 60 ohm, forprogramming the metal1 936, to supplement the Joule heat generated bymetal1 936 alone. The metal-gate jumper 934 can also help to generateJoule heat too. The end B can further be coupled to a via1 937 to metal2938 for further interconnect. The metal1 936 near end B has an extensionlonger than required in design rules to accelerate programming. The hotspot is marked with a sign of sun on metal1 936. The location of the hotspot depends on the length ratios of metal1 jumper 932, metal-gatejumper 934 and metal1 936. This embodiment is more suitable when themetal-gate jumper 934 is harder to program than the metal1 936.

FIG. 7(a 11) shows a 3D view of yet another metal fuse element 930′having two ends A and B, constructed from three contacts, one metalgate, and two segments of metal1. The metal fuse element 930′ has oneend A coupled to a contact 931′, which is further coupled to ametal-gate jumper 934′ through a metal1 jumper 932′ and another contact933′. The metal-gate jumper 934′ is coupled to another metal1 936′-1through another contact 935′. The other end of the metal1 936′-1 is theend B of the metal fuse element 930′. There are three contacts togenerate more heat, i.e. 180 ohm if each contact has 60 ohm, forprogramming the metal1 936′-1 to supplement the Joule heat generated bymetal1 936′-1 alone. The metal-gate jumper 934′ can also help togenerate Joule heat too. The end B can be coupled to a via1 937′ whichcouples to metal2 938′ for further interconnect. The metal1 936-1 nearend B can also be extended beyond required by design rules to improveprogramming. The extended area can be quite long that can be configured(e.g., bent) as or into a configuration (e.g., hook or serpentine shape)to save area. For example, as illustrated in FIG. 7(a 11), the metal1936′-1 can be extended to include a hook shape of metal1 936′-2 and936′-3 to accelerate programming. The hot spot is marked with a sign ofsun on metal1 936′. The location of the hot spot depends on the lengthratios of the metal1 jumper 932′, the metal-gate jumper 934′ and themetal1 936′. This embodiment is more suitable when the metal-gate jumper934′ is harder to program than the metal1 936′.

FIG. 7(a 12) shows a 3D view of another metal1 fuse element 940, havingtwo ends A and B, constructed from contact, via1, via2 and segments ofmetal1 and metal2, according to another embodiment. The metal1 fuse 940has one end A coupled to a contact 941, metal1 942, via1 943-1, metal2944-1, via2 944-1 to metal3 jumper 947. The metal3 jumper 947 can becoupled to the metal1 946 through via2 945-2, and couple to metal2944-2, via1 943-2. The contact and vias in the conduction path can helpto generate more Joule heat to accelerate programming. The hot spot ismarked with a sign of sun. The location of the hot spot on metal1 946depends on the length ratio of metal3 jumper 947 and metal1 946. Similarto that shown in FIG. 7(a 11), the metal 946 can be extended to improveprogramming. For example, an extension provided to the metal1 946 can belonger than required by design rules and/or a hook or serpentine shapeof metal1 near the end B can help to accelerate programming. Thisembodiment can generate more heat by using more contact or vias.

FIG. 7(a 13) shows a 3D perspective view of a metal gate as a fuseelement 950 in a FinFET technology, according to one embodiment. Themetal-gate fuse 956 straddles over 4 fins 951 (not shown) in aperspective view. Over the fins, there are high-K dielectrics with workfunction metal 952 and gate filler 953 on top of fins 951. There arealso gate filler 954 of the same material to interconnect between fins951 and gate extension 955 to provide a first gate contact 957 (notshown) and second gate contact 958 (not shown) to constitute themetal-gate fuse 956. The metal-gate fuse 956 can be built with a portionof PMOS and another portion of NMOS gate material in any currentdirections. NMOS and PMOS can have different gate material compositionsto create stress so that fuse programming can be easier. The boundariesbetween NMOS and PMOS can be somewhere in the middle of the fins 951 ornear to the fins 951 to create heat and stress spots to assist fuseprogramming. The thinner portion of the gate 953 on top of fins 951 canhave higher resistance to act as a heat generator to assist programming.On the other hand, the thin gate dielectrics below the gate 953 candissipate heat to the fins 951 and can act as a heat sink. There aremany combinations of using heat generator and heat sink as described inembodiments to accelerate programming. The metal-gate fuse 956 canstraddle one or any number of fins in other embodiment. The gate 953 ontop of the fins 951 can be in an extension area, beyond the cathode oranode contacts, instead of in the fuse body, in another embodiment.There are many variations and yet equivalent embodiments of thisembodiment.

The embodiments in FIGS. 7(a 8)-7(a 13) are representative and suitablefor those interconnect fuses that have low resistivity, i.e. metal orsome kinds of local interconnect that has sheet resistance of 0.1-0.5ohm/sq, for example. Counting on Joule heat generated by theinterconnect fuses alone may not be sufficient to raise the temperaturefor programming. Instead, by building up a plurality of contacts, vias,or combinations of contacts and/or vias in series, more heat can begenerated to raise the temperature to assist with programming. Theseembodiments can be applied to any kinds of metals, such as metal gate,local interconnect, metal1, metal2, etc. These embodiments can also beapplied to any kind or any number of contacts, via1 (between metal1 andmetal2), or via2 (between metal2 and metal3), etc. It is more desirableto keep the metal to be programmed long (i.e. length/width>20) and thejumpers (such as the other metals, metal gate, or local interconnect)being used short (i.e. length/width<10) so that high temperature canoccur in the metal portion to be programmed. The long metal line can beserpentine to fit into small area. By using jumpers, contacts/vias canbe further combined to further increase the resistance of the fuseelement and raise its temperature to thereby seed-up programming of thefuse element.

For TFT technologies, the transparent electrode can be a suitablematerial as a fuse element of a programmable resistive memory, such asIndium-Tin-Oxide (ITO), ZnO, IZO, or IGZO etc. The material or electrodeused in an organic TFT, such as polymer of thiophene molecules or PMMAcan also be used as a programmable resistive element in a programmableresistive memory. Specifically, ITO or other metal oxide or organicsemiconductor can be used as a transparent electrode that can conductelectricity and heat and yet be transparent so as not to block the lightmodulated by the liquid crystal. ITO can be printed with feature size of3-4 um wide and has sheet resistance of about 50 ohm per square, whichis within the operation range of OTP circuits in TFT technologies. TheITO fuse can have length to width ratio from 10 to 80. The ITO fuse canbe a long straight line or a serpentine structure. The ITO fuse can haveno more than two contacts, such as only one contact, in one terminal,and can have more contacts in one terminal than in the other one.

The device in a TFT technology can be used as an OTP element, such asusing the gate or spacer to trap charges. The gate to bulk or source todrain can be programmed to breakdown to act as an OTP element.

There are many different and yet equivalent embodiments of using variousa-Si;H, LTPS, organic semiconductor, or metal oxide semiconductor as aprogrammable resistive element in a programmable resistive memory andthey all fall into the same scope of the invention.

There can be many variations of equivalent embodiments in usingcontacts, vias, or combination to assist programming metal fuses. Forexample, the metal to be programmed can be metal gate, localinterconnect, metal1, metal2, metal3, or metal4, etc. The via can be anytypes of via, such as via2 between metal2 and metal3. The number of viasor contacts can be one or more, or none. The directions of current flowcan be downstream or upstream, i.e. current flows from metal2 to metal1or from metal1 to metal-2, respectively. It is more desirable for theend A to be coupled to a diode as program selector with no more than twocontacts, and for the end B to be coupled to wider metals with morevias. The program selector can be a MOS device too. Those skilled in theart understand that there are many equivalent embodiments of the metalfuses using heat generated from a single or a plurality of contacts orvias to assist with programming and that are all still within otherembodiments.

The OTP elements shown in FIGS. 7(a) and 7(a 1)-7(a 12) are only toillustrate certain embodiments. As denoted, the OTP elements can bebuilt from any interconnects, including but not limited to polysilicon,silicided polysilicon, silicide, local interconnect, polymetal, metal,metal alloy, metal gate, thermally isolative active region, CMOS gate,or combinations thereof. Polymetal is a sandwich structure ofmetal-nitride-polysilicon, (i.e., W/WNx/Si) that can be used to reducethe resistance of polysilicon. The OTP elements can be N type, P type,or part N and part P type. Each of the OTP elements can have an anode, acathode, and at least one body. The anode or cathode contacts can be nomore than 2 for polysilicon/polymetal/local interconnect, and can be nomore than 4 for metal fuse, preferably. The contact size can be largerthan at least one contact outside of the OTP memory array. The contactenclosure can be smaller than at least one contact enclosure outside ofthe OTP memory array to lower the electromigration threshold. In anotherembodiment, the enclosure can be negative, namely, the contact is widerthan the underneath figure, the so-called borderless contact. The lengthto width ratio in the body can be between 0.5-8, or more particular 2-6in some embodiments, for polysilicon/local interconnect/polymetal/metalgate, or in the case of metal even larger than 10 for metal, forexample. There are many variations or combinations of embodiments inpart or all that can be considered equivalent embodiments.

Polysilicon used to define CMOS gates or as interconnect in ahigh-K/metal-gate CMOS process can also be used as OTP elements. Thefuse element can be P type, N type, or part N and part P type ifapplicable. Particularly, the after/before resistance ratio can beenhanced for those fuse elements that have P+ and N+ implants to createa diode after being programmed, such as polysilicon, polymetal,thermally isolated active region, or gate of a high-K/metal-gate CMOS.For example, if a metal-gate CMOS has a sandwich structure ofpolysilicon between metal alloy layers, the metal alloy layers may beblocked by masks generated from layout database to create a diode in thefuse elements. In SOI or SOI-like processes, a fuse element can also beconstructed from a thermally isolated active region such that the fuseelement can be implanted with N+, P+, or part N+ and part P+ in each endof the active region. If a fuse element is partly implanted with N+ andP+, the fuse element can behave like a reverse-biased diode, such aswhen silicide on top is depleted after being programmed. In oneembodiment, if there is no silicide on top of active regions, an OTPelement can also be constructed from an isolated active region with partN+ and part P+ to act as a diode for breakdown in forward or reversebiased conditions. Using isolated active region to construct an OTPelement, the OTP element can be merged with part of the program-selectordiode in one single active island to save area.

In some processing technologies that can offer Local Interconnect, localinterconnect can be used as part or all of an OTP element. Localinterconnect, also called as metal0 (M0), is a by-product of a salicideprocess that has the capability to interconnect polysilicon or MOS gatewith an active region directly. In advanced MOS technologies beyond 28nm, the scaling along the silicon surface dimensions is much faster thanscaling in the height. As a consequence, the aspect ratio of CMOS gateheight to the channel length is very large such that making contactsbetween metal1 and source/drain or CMOS gate very expensive in terms ofdevice area and cost. Local interconnect can be used as an intermediateinterconnect between source/drain to CMOS gate, between CMOS gate tometal1, or between source/drain to metal1 in one or two levels The localinterconnects, CMOS gate, or combination can be used as an OTP elementin one embodiment. The OTP element and one terminal of theprogram-selector diode can be connected directly through localinterconnect without needing any contacts to save area in anotherembodiment.

Those skilled in the art understand that the above discussions are forillustrative purposes and that there are many variations and equivalentsin constructing electrical fuses (including anti-fuses) or programselectors in CMOS processes.

FIGS. 7(b), 7(c), 7(d), 7(e), 7(f), 7(g), 7(h) and 7(i 1)-7(i 6) showtop views of P+/N well diodes constructed with different embodiments ofisolation and fuse elements. Without isolation, P+ and N+ active regionswould be shorted together by silicide grown on top. The isolation can beprovided by STI, dummy CMOS gate, SBL, or some combination thereof fromone to four (1-4) or any sides or between cells. The P+ and N+ activeregions that act as P and N terminals of the diodes are sources ordrains of CMOS devices. Both the P+ and N+ active regions reside in an Nwell, which can be the same N well to house PMOS in standard CMOSprocesses. The N+ active region of the diodes in multiple cells can beshared, though for simplicity FIGS. 7(b)-7(h) and 7(i 1)-7(i 6) showonly one N+ active region for one P+ active region.

FIG. 7(b) shows a top view of one embodiment of an electrical fuse cell40 including a P+/N well diode having active regions 43 and 44 with STI49 isolation in four sides. A fuse element 42 is coupled to the activeregion 43 through a metal 46. The active regions 43 and 44 are coveredby a P+ implant 47 and N+ implant (the complement of P+ implant 47),respectively, to constitute the P and N terminals of the diode 40. Theactive regions 43 and 44 of the diode 40 reside in an N well 45, thesame N well can be used to house PMOS in standard CMOS processes. Inthis embodiment, the P+ active region 43 and N+ active region 44 aresurrounded by an STI 49 in four (4) sides. Since the STI 49 is muchdeeper than either the N+ or P+ active region, the resistance of thediode 40 between the P+ active region 43 and N+ active region 44 ishigh.

FIG. 7(c) shows a top view of another embodiment of an electrical fusecell 50 including a P+/N well diode having active regions 53 and 54 withan STI 59 isolation in two sides and a dummy MOS gate 58 in another twosides. An active region 51 with two STI slots 59 in the right and leftis divided into a peripheral 54 and a central 53 regions by two MOSgates 58 on top and bottom. The dummy MOS gate 58 is preferably biasedto a fixed voltage. The central active region 53 is covered by a P+implant 57, while the peripheral active region 54 is covered by an N+implant layer (the complement of the P+ implant), which constitute the Pand N terminals of the diode 50. The active region 51 resides in an Nwell 55, the same N well can be used to house PMOS in standard CMOSprocesses. A fuse element 52 is coupled to the P+ active region 53. Inthis embodiment, the P+ active region 53 and N+ active region 54 aresurrounded by STI 59 in left and right sides and the dummy MOS gate 58on top and bottom. The isolation provided by the dummy MOS gate 58 canhave lower resistance than the STI isolation, because the space betweenthe P+ active region 53 and N+ active region 54 may be narrower andthere is no oxide to block the current path underneath the siliconsurface.

FIG. 7(d) shows a top view of yet another embodiment of an electricalfuse cell 60 including a P+/N well diode with dummy MOS gate 68providing isolation in four sides. An active region 61 is divided into acenter active region 63 and a peripheral active region 64 by aring-shape MOS gate 68. The center active region 63 is covered by a P+implant 67 and the peripheral active region 64 is covered by an N+implant (the complement of the P+ implant 67), respectively, toconstitute the P and N terminals of the diode 60. The active region 61resides in an N well, the same N well can be used to house PMOS instandard CMOS processes. A fuse element 62 is coupled to the P+ activeregion 63 through a metal 66. The dummy MOS gate 68, which can be biasedat a fixed voltage, provides isolation between P+ active region 63 andN+ active region 64 regions on four sides. This embodiment offers lowresistance between P and N terminals of the diode 60.

FIG. 7(e) shows a top view of yet another embodiment of an electricalfuse cell 60′ including a P+/N well diode having active regions 63′ and64′ with Silicide Block Layer (SBL) 68′ providing isolation in foursides. An active region 61′ is divided into a center active region 63′and a peripheral active region 64′ by an SBL ring 68′. The center activeregion 63′ and the peripheral active region 64′ are covered by a P+implant 67′ and an N+ implant (the complement of P+ implant 67′),respectively, to constitute the P and N terminals of the diode 60′. Theboundaries between the P+ implant 67′ and N+ implants are about in themiddle of the SBL ring 68′. The active region 61′ resides in an N well65′. A fuse element 62′ is coupled to the P+ active region 63′ through ametal 66′. The SBL ring 68′ blocks silicide formation on the top of theactive regions between P+ active region 63′ and N+ active region 64′. Inthis embodiment, the P+ active region 63′ and N+ active region 64′ areisolated in four sides by P/N junctions. This embodiment has lowresistance between the P and N terminals of the diode 60′, though theSBL may be wider than a MOS gate. In another embodiment, there is aspace between the P+ implant 67′ and the N+ implant that is covered bythe SBL ring 68′.

FIG. 7(f) shows a top view of another embodiment of an electrical fusecell 70 having a P+/N well diode with an abutted contact. Active regions73 and 74, which are isolated by an STI 79, are covered by a P+ implant77 and an N+ implant (the complement of the P+ implant 77),respectively, to constitute the P and N terminals of the diode 70. Bothof the active regions 73 and 74 reside in an N well 75, the same N wellcan be used to house PMOS in standard CMOS processes. A fuse element 72is coupled to the P+ active region 73 through a metal 76 in a singlecontact 71. This contact 71 is quite different from the contacts in FIG.7(b), (c), (d), and (e) where a contact can be used to connect a fuseelement with a metal and then another contact is used to connect themetal with a P+ active region. By connecting a fuse element directly toan active region through a metal in a single contact, the cell area canbe reduced substantially. The abutted contact can be larger than aregular contact and, more particularly, can be a large rectangularcontact that has about twice the area of a regular contact in a CMOSprocess. This embodiment for a fuse element can be constructed by a CMOSgate, including polysilicon, silicided polysilicon, polymetal, localinterconnect, or non-aluminum metal CMOS gate, that allows an abuttedcontact.

FIG. 7(g) shows a top view of yet another embodiment of fuse cells 70′with a central cell 79′ and a portion of left/right cells. The centralcell 79′ includes an electrical fuse element 72′ and a diode as programselector. An active region 71′ is divided into upper active regions 73′,73″, and 73′″ and a lower active region 74′ by a U-shape dummy MOS gate78′. The upper active regions 73′, 73″, and 73′″ are covered by a P+implant 77′ while the rest of lower active region 74′ is covered by anN+ implant (the complement of the P+ implant 77′). The active region 73′and 74′ constitute the P and N terminals of the diode in the centralcell 79′. The active region 73″ serves as a P terminal of a diode in theleft cell, while the active region 73′″ serves as a P terminal of adiode in the right cell. The polysilicon 78′ isolates the P+/N+ of thediode in the central cell 79′ and also isolates the P+ terminals of theleft, central, and right cells by tying the polysilicon 78′ to a highvoltage (i.e. V+ in FIG. 5(a)). The polysilicon 78′ can be a dummy MOSgate fabricated in standard CMOS processes. The active region 71′resides in an N well, the same N well that can be used to house PMOS instandard CMOS processes. A fuse element 72′ is coupled to the P+ activeregion 73′ through a metal 76′ in the central cell 79′. This embodimentcan offer low resistance between P and N terminals of the diode in thecentral cell 79′ while providing isolations between the cells in theleft and right.

FIG. 7(h) shows a top view of yet another embodiment of a fuse cell 70″that has a dummy MOS gate 78″ providing isolation between P+/N+ in Nwell as two terminals of a diode and an electrical fuse element 72″. Anactive region 71″ is divided into an upper active region 73″ and a loweractive region 74″ by a dummy MOS gate 78″. The upper active region 73″can be covered by a P+ implant 77″ while the lower active region 74″ canbe covered by an N+ implant (the complement of the P+ implant 77″). Theactive regions 73″ and 74″ constitute the P and N terminals of the diodein the cell 70″. The polysilicon 78″ provides isolation between theP+/N+ of the diode in the cell 70″ and can be tied to a fixed bias. TheMOS gate 78″ is a dummy MOS gate fabricated in standard CMOS processesand can be a metal gate in advanced metal-gate CMOS processes. The widthof the dummy MOS gate can be close to the minimum gate width of a CMOStechnology. In one embodiment, the width of the dummy MOS gate can beless than twice the minimum gate width of a CMOS technology. The dummyMOS gate can also be created from an I/O device to sustain highervoltage. The active region 71″ resides in an N well 75″, the same N wellthat can be used to house PMOS in standard CMOS processes. A fuseelement 72″ can be coupled to the P+ active region 73″ through a metal76″ in one end (through contacts 75″-2 and 75″-3) and to a high voltagesupply line V+ in the other end (through contact 75″-1). The N+ region74″ is coupled to another voltage supply line V− through another contact75″-4. At least one of the contacts 75″-1, 2, 3, 4 can be larger than atleast one contacts outside of the memory array to reduce the contactresistance in one embodiment. When high and low voltages are applied toV+ and V−, respectively, a high current can flow through the fuseelement 72″ to program the fuse element 72″ into a high resistance stateaccordingly.

FIG. 7(i 1) shows a top view of a programmable resistive cell 80 thatcorresponds to the schematic in FIG. 6(c 1), according to oneembodiment. A one-piece active region 83 inside an N well 85 is dividedinto 83-1, 83-2, and 83-3 by a polysilicon gate 88, to serve as anode ofdiode, cathode of diode, and source of MOS, respectively. The activeregion 83-2 and a portion of MOS gate 88 is covered by an N+ implant 86,while the rest of the active region is covered by a P+ implant 87. Aprogrammable resistive element 82 has a cathode coupled to the anode ofthe diode by a metal 81 and has an anode coupled to a supply voltageline V+, or Bitline (BL). The cathode of the diode 83-2 and the sourceof the MOS 83-3 can be coupled as Source Line (SL) by a higher level ofmetal running horizontally.

FIG. 7(i 2) shows another top view of a programmable resistive devicecell 80′ that corresponds to the schematic in FIG. 6(c 1), according toanother embodiment. A one-piece active region 83′ inside an N well 85′is divided into 83′-1, 83′-2, and 83′-3 by a MOS gate 88′ and an N+implant 86′, to serve as anode of diode, cathode of diode, and source ofMOS, respectively. The active region 83′-2 and a portion of MOS gate 88′is covered by an N+ implant 86′, while the rest of the active region iscovered by a P+ implant 87′. A programmable resistive element 82′ hasthe cathode coupled to the anode of the diode by a metal 81′, and has ananode coupled to a supply voltage line V+, or Bitline (BL). The cathodeof the diode 83′-2 and the source of the MOS 83′-3 are coupled as SourceLine (SL) by a higher level of metal running horizontally.

FIG. 7(i 3) shows yet another top view of a programmable resistivedevice cell 80″ that corresponds to the schematic in FIG. 6(c 1),according to yet another embodiment. A one-piece active region 83″inside an N well 85″ is divided into 83″-1, 83″-2, and 83″-3 by a MOSgate 88″ and an N+ implant 86″, to serve as anode of diode, cathode ofdiode, and source of MOS, respectively. The active region 83″-2 and aportion of MOS gate 88″ is covered by an N+ implant 86″, while the restof the active region is covered by a P+ implant 87″. A programmableresistive element 82″ has the cathode coupled to the anode of the diodeby a metal 81″, and has an anode coupled to a supply voltage line V+, orBitline (BL). The resistive element 82″ can be bent to fit into thespace more efficiently. The cathode of the diode 83″-2 and the source ofthe MOS 83″-3 are coupled as Source Line (SL) by an additional activeregion 83″-4 and a higher level of metal running horizontally.

FIG. 7(i 4) shows a top view of a programmable resistive cell 90 thatcorresponds to the schematic in FIG. 6(c 1), according to oneembodiment. A one-piece active region 93 inside an N well 95 is dividedinto 93-1, 93-2, 93-3, and 93-4 by a MOS gate 98, to serve as anode ofdiode, one source of MOS, another source of MOS, and cathode of thediode, respectively. The active region 93-4 and a portion of MOS gate 98is covered by an N+ implant 96, while the rest of the active region iscovered by a P+ implant 97. A programmable resistive element 92 has acathode coupled to the anode of the diode by a metal 91, and has ananode coupled to a supply voltage line V+, or Bitline (BL). The cathodeof the diode 93-4 and the sources of the MOS 93-2 and 93-3 are coupledas Source Line (SL) by a higher level of metal running horizontally. Inthis embodiment, the MOS device is put on two sides of the cell that canbe shared with the adjacent cells to save area. One or two MOS devices93-2 or 93-3 can be converted into a diode by changing the P+ implant 97into N+ implant 96 on the active region 93-2 or 93-3, respectively, totrade read for program performance in another embodiment.

FIG. 7(i 5) shows a top view of a programmable resistive cell 90′ thatcorresponds to the schematic in FIG. 6(c 1), according to oneembodiment. A one-piece active region 93′ inside an N well 95′ isdivided into 93′-1, 93′-2, 93′-3, and 93′-4 by a polysilicon gate 98′,to serve as anode of diode, one source of MOS, another source of MOS,and cathode of the diode, respectively. The active region 93′-4 and aportion of gate 98′ is covered by an N+ implant 96′, while the rest ofthe active region is covered by a P+ implant 97′. A programmableresistive element 92′ has a cathode coupled to the anode of the diode bya metal 91′, and has an anode coupled to a supply voltage line V+, orBitline (BL). The cathode of the diode 93′-4 and the sources of the MOS93′-2 and 93′-3 are coupled as Source Line (SL) by a higher level ofmetal running horizontally. In this embodiment, the MOS device is put ontwo sides of the cell without any contact in the source to save area.One or two MOS devices 93′-2 or 93′-3 can be converted into a diode bychanging the P+ implant 97′ into N+ implant 96′ on the active region93′-2 or 93′-3, respectively, to trade read for program performance inanother embodiment.

FIG. 7(i 6) shows another top view of a programmable resistive cell 90″that corresponds to the schematic in FIG. 6(c 1), according to oneembodiment. This top view is very similar to the one shown in FIG. 7(i4), except that the body of the fuse element 92″ overlaps into theactive region 93″-1 and is coupled to the active region 93″-1 by asingle shared contact 94″ with a metal 91″ on top, instead of using onecontact for body to metal and another contact for active to metal asshown in FIG. 7(i 4). This embodiment can save spacing between the body92″ and active area 93″-1.

FIG. 7(i 7) shows a top view of 1×4 programmable resistive device (PRD)cells 180 built on a FinFET technology, according to one embodiment. Thecells 180 have MOS gates 181-1 through 181-6 provided in a horizontaldirection in this embodiment. The gates 181-3 and 181-4 are the gates ofdummy-gate diodes, while the other gates can serve as programmableresistive elements (PREs), such as fuses. In one embodiment, fins 182-1and 182-2 are fin structures provided in the vertical direction that canbe used as bodies of FinFETs. Layer 189 is an N+ implant to define thecathodes of the dummy-gate diodes for the four cells 180. For thetop-left cell 180-0, contact 283-1 and 183-0 are cathode and anodecontacts of a dummy-gate diode in cell 180-0, respectively. Contacts185-0 and 186-0 are cathode and anode contacts of a PRE 181-2,respectively. A metal 187 couples the cathode contact 185-0 of the PREto the anode contact 183-0 of the diode. 186-0 is an anode contact ofthe PRE 181-2 that can be coupled to a higher level of metal through avia 188-0. In one embodiment, the via 188-0 can be about the same sizeof the contact 186-0 and can be placed on top of the contact 186-0.Nwell layer 199 is to provide an N type well to house the devices builton fins. The portion of the gate 181-2 to the right of the contact 186-0is an extended area 184-0 of the PRE 181-2, which is longer thanrequired by design rules and with reduced or substantially no currentflow through to accelerate programming. The same construction can beapplied to the other 3 cells. The anodes of the PREs, 185-0 through185-3 are coupled to high level metals through vias 188-0 through 188-3,which are further coupled as BL0 through BL3. The cathode contacts 283-1and 283-2 of fins 182-1 and 182-2, respectively, can be coupled to a WLBrunning horizontally. The WLB and BL0-BL3 can be used to select one of1×4 PRD cells.

The two gates 181-3 and 181-4 across two fins 182-1 and 182-2 (finstructures) to define six (6) active regions. The middle two activeregions are covered by an N+ layer 189 to serve as the common cathodesof dummy-gate diodes for cells 180-0 through 180-3 that are usuallycoupled to a wordline bar (WLB) running horizontally. The four outeractive regions in the fins are covered by a P+ layer (not shown) toserve as anodes of dummy-gate diodes with contacts 183-0 through 183-3.This constructs a 1×4 dummy-gate diode array with the dummy-gate diodesacting as selectors for the 1×4 programmable resistive cell array. Eachanode of a diode is coupled to one end of PRE. The other ends of thePREs are further coupled to bitlines BL0, BL1, BL2, and BL3 through vias(188-0 to 188-3), to construct a 1×4 1R1D PRD cell array. The 4 cells ina PRE array can be selected by WLB and BLi (i=0,1,2,3).

FIG. 7(i 8) shows a top view of 2×2 programmable resistive device (PRD)cells 180′ built on a FinFET technology, according to anotherembodiment. The cells 180′ have MOS gates 181′-1 through 181′-6 runningin the horizontal direction. The gates 181′-3 and 181′-4 are the gatesof dummy-gate diodes, while the other gates can serve as programmableresistive elements (PREs), such as fuses. In this embodiment, fins182′-1 and 182′-2 are fin structures provided in a vertical directionthat can be used as bodies of FinFETs. Layer 189′ is an N+ implant todefine the cathodes of the dummy-gate diodes for four cells. For thetop-left cell 185′-0, contact 283′-1 and 183′-0 are cathode and anodecontacts of a dummy-gate diode in the cell 180′-0, respectively.Contacts 185′-0 and 186′-0 are cathode and anode contacts of a PRE181′-2, respectively. A metal 187′ couples the cathode contact 185′-0 ofthe PRE 181′-2 to the anode contact 183′-0 of the diode. The anodecontact 186′-0 of the PRE 181′-2 can be coupled to a higher level ofmetal through a via 188′-0, which can be further coupled to anupper-level metal as BL0 running horizontally. Nwell layer 199′ providesan N type well to house devices built on fins. The portion of the gate181′-2 to the right of the contact 186′-0 is an extended area 184′-0 ofthe PRE 181′-2, which is longer than required by design rules and withreduced or substantially no current flow therethrough which canaccelerate programming. The same construction can be applied to theother three (3) cells. For the bottom-left cell 180′-2, the anodecontact 183′-2 of the diode can be coupled to the cathode contact 185′-2of the PRE 181′-5. The anode contact 186′-2 of the PRE 181′-5 can becoupled to a via 188′-1, which can be further coupled to BL1 runninghorizontally. The top-right and bottom-right cells 180′-1 and 180′-3 canhave their PREs' anode contacts 186′-1 and 186′-3 coupled to BL0 andBL1, respectively. The cathode contacts 183′ and 183″ of the diodesbuilt on fins 182′-1 and 182′-2 can be coupled to WL0 and WL1,respectively, running in the vertical direction. The WL0/WL1 and BL0/BL1can be used to select one of the 2×2 PRD cells.

FIG. 7(i 8 a) shows a top view of 1×2 programmable resistive device(PRD) cells 180″ built on a FinFET technology using a portion of a fuseas a PRD element, according to one embodiment. The cells 180″-0 has MOSgates 181″-1 through 181″-2 provided in a horizontal direction to serveas dummy gates in this embodiment. In one embodiment, fins 182″ is a finstructure provided in the vertical direction that can be used as bodiesof FinFETs and PRE elements. Layer 189″ is an N+ implant to define thecathodes 283″ of the dummy-gate diodes for the two cells 180″-0 and180″-1. For the top cell 180″-0, contact 283″ and 184″-0 are cathode andanode contacts of a dummy-gate diode in cell 180″-0, respectively.Contacts 184″-0 and 186″-0 are cathode and anode contacts of a PRE185″-0, respectively. Contact 184″-0 can serve as the anode contact ofthe diode and cathode contact of the PRE. The contact 184″-0 allowsmultiple dummy-gate diodes to be coupled together to create highcurrent. The contact 184″-0 can be omitted if a single dummy-gate diodebuilt in a fin as a selector is sufficient. A metal 187″-0 couples theanode contact 186″-0 of the PRE to a bitline BL0 through a via 188″-0.In one embodiment, the via 188″-0 can be about the same size of thecontact 186″-0 and can be placed on top of the contact 186″-0. Nwelllayer 199″ provides an N type well to house the devices built on fins.The portion of the 182″ to the top of the contact 186″-0 is an extendedarea of the PRE 185″-0, which is longer than required by design rulesand with reduced or substantially no current flow through to accelerateprogramming. The same construction can be applied to the other cell. Theanodes of the PREs, 185″-0 and 185″-1 are coupled to high level metalsthrough vias 188″-0 and 188″-1, which are further coupled as BL0 andBL1, respectively. The cathode contacts 283″ of fins 182″ can be coupledto a WLB running horizontally. The WLB and BL0-BL1 can be used to selectone of 1×2 PRD cells.

FIG. 7(i 8 b) shows a top view of 2×1 programmable resistive device(PRD) cells 180′″ built on a FinFET technology using a portion of a finas a PRD element, according to another embodiment. The cell 180′″-0 haveMOS gates 181′″-1 through 181′″-2 provided in a horizontal direction toserve as dummy gates in this embodiment. In one embodiment, fins 182′″is a fin structure provided in the vertical direction that can be usedas bodies of FinFETs and PRE elements. Layer 189′″ is an N+ implant todefine the cathodes 283′″ of the dummy-gate diodes for the two cells180′″-0 and 180′″-1. For the top cell 180′″-0, contact 283′″ and 184′″-0are cathode and anode contacts of a dummy-gate diode in cell 180′″-0,respectively. Contacts 184′″-0 and 186′″-0 are cathode and anodecontacts of a PRE 185′″-0, respectively. Contact 184′″-0 can serve asthe anode contact of the diode and cathode contact of the PRE. Thecontact 184′″-0 allows multiple dummy-gate diodes to be coupled togetherto create high current. The contact 184′″-0 can be omitted if a singledummy-gate diode built in a fin as a selector is sufficient. A metal187′″-0 couples the anode contact 186′″-0 of the PRE to a bitline BL0through a via 188′″-0. In one embodiment, the via 188′″-0 can be aboutthe same size of the contact 186′″-0 and can be placed on top of thecontact 186′″-0. Nwell layer 199′″ provides an N type well to house thedevices built on fins. The portion of the 182′″ to the top of thecontact 186′″-0 is an extended area of the PRE 185′″-0, which is longerthan required by design rules and with reduced or substantially nocurrent flow through to accelerate programming. The same constructioncan be applied to the other cell. The anodes of the PREs, 185′″-0 and185′″-1 are coupled to high level metals through vias 188′″-0 and188′″-1, which are further coupled as BL0 and BL1, respectively. Thecathode contacts 283′″ of fins 182′″ can be coupled to a WLB runningvertically. The WLB and BL0-BL1 can be used to select one of 2×1 PRDcells.

FIGS. 7(i 7), 7(i 8), 7(i 8 a), and 7(i 8 b) are used for illustrativepurposes. There are many variations and equivalent embodiments thatstill fall within the scope of this invention. For example in FIG. 7(i7), the selector in a PRD cell can have any number of fins (such as 32,16, 8, 4, etc.), through it is more desirable to have few fins for onePRD cell (such as 1 or ½ fin per cell) in other embodiments. The N+layer 189 as shown in FIG. 7(i 7) falls on the gates to construct four(4) dummy-gate diodes in one embodiment. The width of the N+ layer 189can be narrower such that it does not overlap into the gates 181-3 and181-4, which constructs four (4) MOS devices as selectors in anotherembodiment. The MOS can be turned on by pulling the voltage low in thecontact 183 area to turn on the source/drain junction diode of the MOSas described in FIGS. 6(c 4)-6(c 7). The devices built on fins 182-1and/or 182-2 can be core logic or I/O devices.

The gates 181-1 through 181-6 can be gates of dummy-gate diodes or MOSdevices, or PREs. A segment or a plurality of segments can be used asPREs. The PREs can be rectangle structures and can have at least oneextended area in one or two ends to accelerate programming. The extendedarea is a portion of PRE that is formed such that it is longer thanrequired by design rules and such that reduced or substantially nocurrent flows therethrough.

The extend area can also have contacts built upon it. The length towidth ratio of the extended area can be from 2 to 10 in one embodiment.The gates can be running in the same direction and have equal widthand/or space between them in one embodiment. The gates can also havedifferent width or space combinations in another embodiment. The lengthto width ratio between two closest anode and cathode contracts in a PREcan be from 1 to 8 for metal gate configurations, in one embodiment. ThePREs can be gates for NMOS, PMOS, or combination of NMOS or PMOS gates.The gates 181-2 or 181-5 are dummy-gates of the fin structures 182-1 and182-2. The dummy gates of the fin structures 181-2 or 181-5 can also beused as PREs as shown in FIG. 7(i 7), according to one embodiment. Inanother embodiment, the dummy gates of the fun structures are not usedas PREs so that one additional row of gate per side would be providedfor PRE in another embodiment.

In FIG. 7(i 7), contacts, 183-0 through 183-3, 185-0 through 185-3, and186-0 through 186-3, are used to interconnect nodes through high-levelmetals. The contacts can be borderless contacts that are wider than thewidth of the gates. The contacts can be squares or rectangles and/or canbe made larger to reduce contact resistance that at least one contactoutside of the OTP cell array in one embodiment. There can be aplurality of contacts for one selector or PRE. It is typically moredesirable to have less contacts, such as four (4), to save space. Forexample, the PREs can have one or two contacts in each end in oneembodiment, or can have a different number of contacts at the two ends,i.e. one contact in one end and 2-4 contacts in the other end.

There can be many different conduction modes in a FinFET technology toconstruct selectors, namely dummy-gate mode, MOS/diode mode, MOS mode,and Schottky diode modes, with different implant schemes, according todifferent embodiments of the invention. The selectors shown FIGS. 7(i7), 7(i 8), 7(i 8 a), and 7(i 8 b) are dummy-gate diodes by using MOSgates to divide fins into at least two active regions, where each activeregion receives N+ and P+ implants, respectively. For the cell 180-0 inFIG. 7(i 7), if the N+ implant layer 189 only covers contact area 183but does not overlap into the MOS gate 181-3, this selector is a MOSdevice with a contact 183-0, gate 181-3, and drain/Nwell tap contact183. However, the selector can also have another diode operation bypulling the Nwell tap contact 183 node low to turn on the sourcejunction 183-0 as described in FIG. 6(c 3)-6(c 7). This is a very uniqueoperation because the Nwell tap is normally tied to a high voltage innormal MOS operation. This mode can be called MOS/diode mode. If the twoactive regions in the fin with contacts areas 183-0 and 183 are bothcovered by P+ implant (i.e. no N+ implant 189 in the cell), thisselector is a MOS without Nwell tap, called MOS mode. If the contactarea 183-0 has no N+ implant 189 and no P+ implant, the contact area183-0 forms a Schottky barrier between silicide and N type silicon,called Schottky diode mode. The four operation modes are summarized inFIG. 7(i 9). The four operation modes can also be applied to any CMOSother than FinFET technologies in other embodiments.

In general, a polysilicon or silicide polysilicon fuse is more commonlyused as an electrical fuse because of its lower program current thanmetal or contact/via fuses. However, a metal fuse has some advantagessuch as smaller size and wide resistance ratio after being programmed.Metal as a fuse element allows making contacts directly to a P+ activeregion thus eliminating one additional contact as compared to using apolysilicon fuse. In advanced CMOS technologies with feature size lessthan 40 nm, the program voltage for metal fuses can be lower than 3.3V,which makes metal fuse a viable solution.

FIG. 8(a) shows a top view of a metal1 fuse cell 60″ including a P+/Nwell diode 60″ with dummy CMOS gate isolation. An active region 61 isdivided into a center active region 63 and a peripheral active region 64by a ring-shape MOS gate 68. The center active region 63 is covered by aP+ implant 67 and the peripheral active region 64 is covered by an N+implant (the complement of the P+ implant 67), respectively, toconstitute the P and N terminals of a diode. The active region 61resides in an N well 65, the same N well can be used to house PMOS instandard CMOS processes. A metal1 fuse element 62″ is coupled to the P+region 63 directly. The ring-shape MOS gate 68, which provides dummyCMOS gate isolation, can be biased at a fixed voltage, and can provideisolation between P+ active 63 and N+ active 64 regions in four sides.In one embodiment, the length to width ratio of a metal fuse can beabout or larger than 10 to 1 to lower the electromigration threshold.

The size of the metal fuse cell in FIG. 8(a) can be further reduced, ifthe turn-on resistance of the diode is not crucial. FIG. 8(b) shows atop view of a row of metal fuse cells 60′″ having four metal fuse cellsthat share one N well contact in each side in accordance with oneembodiment. Metal1 fuse 69 has an anode 62′, a metal1 body 66′, and acathode coupled to an active region 64′ covered by a P+ implant 67′ thatacts as the P terminal of a diode. The active region 61′ resides in an Nwell 65′. Another active region 63′ covered by an N+ implant (complementof P+ implant 67′) acts as N terminal of the diode. Four diodes areisolated by STI 68′ and share one N+ active region 63′ each side. The N+active regions 63′ are connected by a metal2 running horizontally, andthe anode of the diode is connected by a metal3 running vertically. Ifmetal1 is intended to be programmed, other types of metals in theconduction path should be wider. Similarly, more contacts and viasshould be put in the conduction path to resist undesirable programming.Using metal1 as a metal fuse in FIG. 8(b) is for illustrative purposes,those skilled in the art understand that the above description can beapplied to any metals, such as metal0, metal2, metal3, or metal4 inother embodiments. Similarly, those skilled in the art understand thatthe isolation, metal scheme, and the number of cells sharing one N+active may vary in other embodiments.

Contact or via fuses may become more viable for advanced CMOStechnologies with feature size less than 65 nm, because smallcontact/via size makes program current rather low. FIG. 8(c) shows a topview of a row of four via1 fuse cells 70 sharing N type well contacts 73a and 73 b in accordance with one embodiment. Vial fuse cell 79 has avia1 79 a coupled to a metal1 76 and a metal2 72. Metal2 72 is coupledto a metal3 through via2 89 running vertically as a bitline. Metal1 76is coupled to an active region 74 covered by a P+ implant 77 that actsas the P terminal of a diode 71. Active regions 73 a and 73 b covered byan N+ implant (complement of P+ implant 77) serves as the N terminal ofthe diode 71 in via1 fuse cell 79. Moreover, the active regions 73 a and73 b serve as the common N terminal of the diodes in the four-fuse cell70. They are further coupled to a metal4 running horizontally as awordline. The active regions 74, 73 a, and 73 b reside in the same Nwell 75. Four diodes in via1 fuse cells 70 have STI 78 isolation betweeneach other. If via1 is intended to be programmed, more contacts and moreother kinds of vias should be put in the conduction path. And metals inthe conduction path should be wider and contain large contact/viaenclosures to resist undesirable programming. Vial as a via fuse in FIG.8(c) is for illustrative purpose, those skilled in the art understandthat the above description can be applied to any kinds of contacts orvias, such as via2, via3, or via4, etc. Similarly, those skilled in theart understand that the isolation, metal scheme, and the number of cellssharing one N+ active may vary in other embodiments.

FIG. 8(d) shows a top view of an array of 4×5 via1 fuses 90 with dummyCMOS gate isolation in accordance with one embodiment. The one-row viafuse shown in FIG. 8(c) can be extended into a two-dimensional array 90as shown in FIG. 8(d). The array 90 has four rows of active regions 91,each residing in a separate N well, and five columns of via fuse cells96, isolated by dummy CMOS gates 92 between active regions. Each viafuse cell 96 has one contact 99 on an active region covered by a P+implant 94 that acts as the P terminal of a diode, which is furthercoupled to a metal2 bitline running vertically. Active regions in twosides of the array 90 are covered by N+ implant 97 to serve as the Nterminals of the diodes in the same row, which is further coupled tometal3 as wordlines running horizontally. To program a via fuse, selectand apply voltages to the desired wordline and bitline to conduct acurrent from metal2 bitline, via1, metal1, contact, P+ active, N+active, to metal3 wordline. To ensure only via1 is programmed, metalscan be made wider and the numbers of other types of vias or contact canbe more than one. To simplify the drawing, metal1-via1-metal2 connectioncan be referred to FIG. 8(c) and, therefore, is not shown in each cellin FIG. 8(d). Those skilled in the art understand that various types ofcontact or vias can be used as resistive elements and the metal schemesmay change in other embodiments. Similarly, the number of cells in rowsand columns, the numbers of rows or columns in an array, and the numbersof cells between N+ active may vary in other embodiments.

The contact or via structures showed in FIGS. 8(c)-8(d) can be appliedto reversible programmable resistive devices too. The contact or via canbe filled with metal oxide between electrodes, such as TiN/Ti/HfO2/TiN,W/TiN/TiON/SiO2/Si, or W/TiOxNy/SiO2/Si, to build a Resistive RAM (RRAM)inside the contact or via hole. The RRAM element can be built into thecontact hole in the anode of the diode to reduce area. This type of RRAMelement can be built into the anode or cathode contact hole of all diodestructures, such as the diodes in FIGS. 5(b)-5(d), 6(a), 6(a 1-a 4), and6(b). The cathodes of a plurality of diodes in a row can be shared, ifthe program current is not degraded much by the parasitic resistance.Moreover, a shallow Nwell can be built to house the diodes as programselectors, instead of using Nwell in standard CMOS, to further reducethe area. By applying different magnitude, duration, or bipolar voltageor current pulses, the RRAM element built inside a contact or via holecan be programmable repetitively and reversibly into another logicstates

Conventional contact can be filled by a buffer layer (i.e. TiN, TaN), atungsten plug, and then by a layer of metal such as Al or Cu.Conventional via can be filled by the same metal layer in the dualdamascene metallization processes. Contact or via constructed in thisway can be very difficult to program. FIG. 8(e 1) shows a 3D perspectiveview of a contact/via fuse cell 400 according to one embodiment. A pairof conductors 401 and 402 run in the same or different directions. Atthe cross-over of the conductors, builds a contact/via fuse 410. Thecontact/via 410 has an N+ silicon 411, intrinsic silicon 412, P+ silicon413, and fuse element 414 to construct a fuse cell 410. The cell has afuse element 414 and a diode as program selector consisting of 411, 412,and 413. The intrinsic layer 412 only means the layer is notintentionally doped or can be slightly N or P doped to increase thediode's breakdown voltage in other embodiments. The fuse cell can beprogrammed by applying a high voltage between the conductor 1 andconductor 0 to turn on the diode as program selector and to conduct ahigh current flowing through the fuse element 414. The conductors can beone of the N+ buried layer, active region, polysilicon, metal1, metal2,etc. The contact/via structure in FIG. 8(e 1) can be applied to anycontact/via fuses discussed in this invention. The fuse element 414 canbe other kinds of materials to construct other kinds of programmableresistive element.

FIG. 8(e 2) shows three cross sections 415, 416, and 417 of the fuseelements 414, corresponding to the fuse cell in FIG. 8(e 1), accordingto other embodiments. The fuse elements can have a polysilicon layer415-1, 416-1, and 417-1 and a silicide layer 415-2, 416-2, and 417-2surrounding the polysilicon layer in the cross sections 415, 416, and417, respectively. The silicide can be coated to the polysiliconsurfaces in 4, 1, or 2 side(s) as shown in 415, 416, and 417,respectively. Alternatively, the silicide can be coated partly or fullyof any side, or none of the polysilicon surface in other embodiments.The polysilicon layers in 415-1, 416-1, and 417-1 can be N+, P+, or partN and part P doped for different embodiments. The polysilicon inside thecontact/via hole for building fuse or diode can be any kinds ofsemiconductor materials, such as silicon, crystalline silicon, selectiveepitaxial silicon (SEQ), or SiGe. The fuse can be partially silicided orfully silicided through the length of the fuse element. The contact/viahole openings may not have the same size in both ends, or may not havethe same as those contact/via outside of the memory arrays. The shape ofthe contact/via may be round square or rectangle or even circle due tolithography and etch. There can be buffer or barrier layers, such as TiNor TaN, between the polysilicon and the conductors. Those skilled in theart understand that there are many variations and equivalent embodimentsand that are still within the scope of this invention.

FIG. 9(a) shows a cross section of a programmable resistive device cell40 using phase-change material as a resistive element 42, with buffermetals 41 and 43, and a P+/N well diode 32, according to one embodiment.The P+/N well diode 32 has a P+ active region 33 and N+ active region 37on an N well 34 as P and N terminals. The isolation between the P+active region 33 and N+ active region 37 is an STI 36. The P+ activeregion 33 of the diode 32 is coupled to a lower metal 41 as a bufferlayer through a contact plug 40-1. The lower metal 41 is then coupled toa thin film of phase change material 42 (e.g., GST film such asGe2Sb2Te5 or AgInSbTe, etc.) through a contact plug 40-2. An upper metal43 also couples to the thin film of the phase-change material 42. Theupper metal 43 is coupled to another metal 44 to act as a bitline (BL)through a plug 40-3. The phase-change film 42 can have a chemicalcomposition of Germanium (Ge), Antimony (Sb), and Tellurium (Te), suchas Ge_(x)Sb_(y)Te_(z) (x, y and z are any arbitrary numbers), or as oneexample Ge₂Sb₂Te₅ (GST-225). The GST film can be doped with at least oneor more of Indium (In), Tin (Sn), or Selenium (Se) to enhanceperformance. The phase-change cell structure can be substantiallyplanar, which means the phase-change film 42 has an area that is largerthan the film contact area coupled to the program selector, or theheight from the surface of the silicon substrate to the phase-changefilm 42 is much smaller than the dimensions of the film parallel tosilicon substrate. In this embodiment, the active area of phase-changefilm 42 is much larger than the contact area so that the programmingcharacteristics can be more uniform and reproducible. The phase-changefilm 42 is not a vertical structure and does not sit on top of a tallcontact, which can be more suitable for embedded phase-change memoryapplications, especially when the diode 32 (i.e., junction diode) isused as program selector to make the cell size very small. For thoseskilled in the art understand that the structure and fabricationprocesses may vary and that the structures of phase-change film (e.g.,GST film) and buffer metals described above are for illustrativepurpose.

FIG. 9(b) shows a top view of a PCM cell using a junction diode asprogram selector having a cell boundary 80 in accordance with oneembodiment. The PCM cell has a P+/N well diode and a phase-changematerial 85, which can be a GST film. The P+/N well diode has activeregions 83 and 81 covered by a P+ implant 86 and an N+ implant(complement of P+ implant 86), respectively, to serve as the anode andcathode. Both active regions 81 and 83 reside on an N well 84, the sameN well can be used to house PMOS in standard CMOS processes. The anodeis coupled to the phase-change material 85 through a metal1 82. Thephase-change material 85 is further coupled to a metal3 bitline (BL) 88running vertically. The cathode of the P+/N well diode (i.e., activeregion 81) is connected by a metal2 wordline (WL) 87 runninghorizontally. By applying a proper voltage between the bitline 88 andthe wordline 87 for a suitable duration, the phase-change material 85can be programmed into a 0 or 1 state accordingly. Since programming thePCM cell is based on raising the temperature rather thanelectro-migration as with an electrical fuse, the phase-change film(e.g., GST film) can be symmetrical in area for both anode and cathode.Those skilled in the art understand that the phase-change film,structure, layout style, and metal schemes may vary in otherembodiments.

Programming a phase-change memory (PCM), such as a phase-change film,depends on the physical properties of the phase-change film, such asglass transition and melting temperatures. To reset, the phase-changefilm needs to be heated up beyond the melting temperature and thenquenched. To set, the phase-change film needs to be heated up betweenmelting and glass transition temperatures and then annealed. A typicalPCM film has glass transition temperature of about 200° C. and meltingtemperature of about 600° C. These temperatures determine the operationtemperature of a PCM memory because the resistance state may changeafter staying in a particular temperature for a long time. However, mostapplications require retaining data for 10 years for the operationtemperature from 0 to 85° C. or even from −40 to 125° C. To maintaincell stability over the device's lifetime and over such a widetemperature range, periodic reading and then writing back data into thesame cells can be performed. The refresh period can be quite long, suchas longer than a second (e.g., minutes, hours, days, weeks, or evenmonths). The refresh mechanism can be generated inside the memory ortriggered from outside the memory. The long refresh period to maintaincell stability can also be applied to other emerging memories such asRRAM, CBRAM, and MRAM, etc.

FIG. 10 shows one embodiment of an MRAM cell 310 using diodes 317 and318 as program selectors in accordance with one embodiment. The MRAMcell 310 in FIG. 10 is a three-terminal MRAM cell. The MRAM cell 310 hasan MTJ 311, including a free layer stack 312, a fixed layer stack 313,and a dielectric film in between, and the two diodes 317 and 318. Thefree layer stack 312 is coupled to a supply voltage V, and coupled tothe fixed layer stack 313 through a metal oxide such as Al₂O₃ or MgO.The diode 317 has the N terminal coupled to the fixed layer stack 313and the P terminal coupled to V+ for programming a 1. The diode 318 hasthe P terminal coupled to the fixed layer stack 313 and the N terminalcoupled to V− for programming a 0. If V+ voltage is higher than V, acurrent flows from V+ to V to program the MTJ 311 into state 1.Similarly, if V− voltage is lower than V, a current flows from V to V−to program the MTJ 311 into state 0. During programming, the other diodeis supposedly cutoff. For reading, V+ and V− can be both set to 0V andthe resistance between node V and V+/V− can be sensed to determinewhether the MTJ 311 is in state 0 or 1.

FIG. 11(a) shows a cross section of one embodiment of an MRAM cell 310with MTJ 311 and junction diodes 317 and 318 as program selectors inaccordance with one embodiment. MTJ 311 has a free layer stack 312 ontop and a fixed layer stack 313 underneath with a dielectric in betweento constitute a magnetic tunneling junction. Diode 317 is used toprogram 1 and diode 318 is used to program 0. Diodes 317 and 318 have P+and N+ active regions on N wells 321 and 320, respectively, the same Nwells to house PMOS in standard CMOS processes. Diode 317 has a P+active region 315 and N+ active region 314 to constitute the P and Nterminals of the program-1 diode 317. Similarly, diode 318 has a P+active 316 and N+ active 319 to constitute the P and N terminals of theprogram-0 diode 318. FIG. 11(a) shows STI 330 isolation for the P and Nterminals of diodes 317 and 318. For those skilled in the art understandthat different isolation schemes, such as dummy MOS gate or SBL, canalternatively be applied.

The free stacks 312 of the MTJ 311 can be coupled to a supply voltage V,while the N terminal of the diode 318 can be coupled to a supply voltageV− and the P terminal of the diode 317 can be coupled to another supplyvoltage V+. Programming a 1 in FIG. 11(a) can be achieved by applying ahigh voltage, i.e., 2V to V+ and V−, while keeping V at ground, or 0V.To program a 1, a current flows from diode 317 through the MTJ 311 whilethe diode 318 is cutoff. Similarly, programming a 0 can be achieved byapplying a high voltage to V, i.e., 2V, and keeping V+ and V− at ground.In this case, a current flows from MTJ 311 through diode 318 while thediode 317 is cutoff.

FIG. 11(b) shows a cross section of another embodiment of an MRAM cell310′ with MTJ 311′ and junction diodes 317′ and 318′ as programselectors in accordance with one embodiment. MTJ 311′ has a free layerstack 312′ on top and a fixed layer stack 313′ underneath with adielectric in between to constitute a magnetic tunneling junction. Diode317′ is used to program 1 and diode 318′ is used to program 0. Diodes317′ and 318′ have P+ and N+ active regions on N wells 321′ and 320′,respectively, which are fabricated by shallow N wells with additionalprocess steps. Though more process steps are needed, the cell size canbe smaller. Diode 317′ has P+ active region 315′ and N+ active region314′ to constitute the P and N terminals of the program-1 diode 317′.Similarly, diode 318′ has P+ active 316′ and N+ active 319′ toconstitute the P and N terminals of the program-0 diode 318′. STI 330′isolates different active regions.

The free stacks 312′ of the MTJ 311′ can be coupled to a supply voltageV, while the N terminal of the diode 318′ can be coupled to a supplyvoltage V− and the P terminal of the diode 317′ is coupled to anothersupply voltage V+. Programming a 1 in FIG. 11(b) can be achieved byapplying a high voltage, i.e., 2V to V+ and V−, while keeping V atground, or 0V. To program a 1, a current will flow from diode 317′through the MTJ 311′ while the diode 318′ is cutoff. Similarly,programming 0 can be achieved by applying a high voltage to V, i.e., 2V,and keeping V+ and V− at ground. In this case, a current will flow fromMTJ 311′ through diode 318′ while the diode 317′ is cutoff.

FIG. 12(a) shows one embodiment of a three-terminal 2×2 MRAM cell arrayusing junction diodes 317 and 318 as program selectors and the conditionto program 1 in a cell in accordance with one embodiment. Cells 310-00,310-01, 310-10, and 310-11 are organized as a two-dimensional array. Thecell 310-00 has a MTJ 311-00, a program-1 diode 317-00, and a program-0diode 318-00. The MTJ 311-00 is coupled to a supply voltage V at oneend, to the N terminal of the program-1 diode 317-00 and to the Pterminal of the program-0 diode 318-00 at the other end. The P terminalof the program-1 diode 317-00 is coupled to a supply voltage V+. The Nterminal of the program-0 diode 318-00 is coupled to another supplyvoltage V−. The other cells 310-01, 310-10, and 310-11 are similarlycoupled. The voltage Vs of the cells 310-00 and 310-10 in the samecolumns are connected to BL0. The voltage Vs of the cells 310-01 and310-11 in the same column are connected to BL1. The voltages V+ and V−of the cells 310-00 and 310-01 in the same row are connected to WL0P andWL0N, respectively. The voltages V+ and V− of the cells 310-10 and310-11 in the same row are connected to WL1P and WL1N, respectively. Toprogram a 1 into the cell 310-01, WL0P is set high and BL1 is set low,while setting the other BL and WLs at proper voltages as shown in FIG.12(a) to disable the other program-1 and program-0 diodes. The bold linein FIG. 12(a) shows the direction of current flow.

FIG. 12(b) shows alternative program-1 conditions for the cell 310-01 ina 2×2 MRAM array in accordance with one embodiment. For example, toprogram a 1 into cell 310-01, set BL1 and WL0P to low and high,respectively. If BL0 is set to high in condition 1, the WL0N and WL1Ncan be either high or floating, and WL1P can be either low or floating.The high and low voltages of an MRAM in today's technologies are about2-3V for high voltage and 0 for low voltage, respectively. If BL0 isfloating in condition 2, WL0N and WL1N can be high, low, or floating,and WL1P can be either low or floating. In a practical implementation,the floating nodes are usually coupled to very weak devices to a fixedvoltage to prevent leakage. One embodiment of the program-1 condition isshown in FIG. 12(a) without any nodes floating.

FIG. 13(a) shows one embodiment of a three-terminal 2×2 MRAM cell arraywith MTJ 311 and junction diodes 317 and 318 as program selectors andthe condition to program 0 in a cell in accordance with one embodiment.The cells 310-00, 310-01, 310-10, and 310-11 are organized as atwo-dimensional array. The cell 310-00 has a MTJ 311-00, a program-1diode 317-00, and a program-0 diode 318-00. The MTJ 311-00 is coupled toa supply voltage V at one end, to the N terminal of program-1 diode317-00 and to the P terminal of program-0 diode 318-00 at the other end.The P terminal of the program-1 diode 317-00 is coupled to a supplyvoltage V+. The N terminal of the program-0 diode 318-00 is coupled toanother supply voltage V−. The other cells 310-01, 310-10, and 310-11are similarly coupled. The voltage Vs of the cells 310-00 and 310-10 inthe same columns are connected to BL0. The voltage Vs of the cells310-01 and 310-11 in the same column are connected to BL1. The voltagesV+ and V− of the cells 310-00 and 310-01 in the same row are connectedto WL0P and WL0N, respectively. The voltages V+ and V− of the cells310-10 and 310-11 in the same row are connected to WL1P and WL1N,respectively. To program a 0 into the cell 310-01, WL0N is set low andBL1 is set high, while setting the other BL and WLs at proper voltagesas shown in FIG. 13(a) to disable the other program-1 and program-0diodes. The bold line in FIG. 13(a) shows the direction of current flow.

FIG. 13(b) shows alternative program-0 conditions for the cell 310-01 ina 2×2 MRAM array in accordance with one embodiment. For example, toprogram a 0 into cell 310-01, set BL1 and WL0N to high and low,respectively. If BL0 is set to low in condition 1, the WL0P and WL1P canbe either low or floating, and WL1N can be either high or floating. Thehigh and low voltages of an MRAM in today's technologies are about 2-3Vfor high voltage and 0 for low voltage, respectively. If BL0 is floatingin condition 2, WL0P and WL1P can be high, low, or floating, and WL1Ncan be either high or floating. In a practical implementation, thefloating nodes are usually coupled to very weak devices to a fixedvoltage to prevent leakage. One embodiment of the program-0 condition isas shown in FIG. 13(a) without any nodes floating.

The cells in 2×2 MRAM arrays in FIGS. 12(a), 12(b), 13(a) and 13(b) arethree-terminal cells, namely, cells with V, V+, and V− nodes. However,if the program voltage VDDP is less than twice a diode's thresholdvoltage Vd, i.e. VDDP<2*Vd, the V+ and V− nodes of the same cell can beconnected together as a two-terminal cell. Since Vd is about 0.6-0.7V atroom temperature, this two-terminal cell works if the program highvoltage is less than 1.2V and low voltage is 0V. This is a commonvoltage configuration of MRAM arrays for advanced CMOS technologies thathas supply voltage of about 1.0V. FIGS. 14(a) and 14(b) show schematicsfor programming a 1 and 0, respectively, in a two-terminal 2×2 MRAMarray.

FIGS. 14(a) and 14(b) show one embodiment of programming 1 and 0,respectively, in a two-terminal 2×2 MRAM cell array in accordance withone embodiment. The cells 310-00, 310-01, 310-10, and 310-11 areorganized in a two-dimensional array. The cell 310-00 has the MTJ311-00, the program-1 diode 317-00, and the program-0 diode 318-00. TheMTJ 311-00 is coupled to a supply voltage V at one end, to the Nterminal of program-1 diode 317-00 and the P terminal of program-0 diode318-00 at the other end. The P terminal of the program-1 diode 317-00 iscoupled to a supply voltage V+. The N terminal of the program-0 diode318-00 is coupled to another supply voltage V−. The voltages V+ and V−are connected together in the cell level if VDDP<2*Vd can be met. Theother cells 310-01, 310-10 and 310-11 are similarly coupled. Thevoltages Vs of the cells 310-00 and 310-10 in the same columns areconnected to BL0. The voltage Vs of the cells 310-01 and 310-11 in thesame column are connected to BL1. The voltages V+ and V− of the cells310-00 and 310-01 in the same row are connected to WL0. The voltages V+and V− of the cells 310-10 and 310-11 in the same row are connected toWL1.

To program a 1 into the cell 310-01, WL0 is set high and BL1 is set low,while setting the other BL and WLs at proper voltages as shown in FIG.14(a) to disable other program-1 and program-0 diodes. The bold line inFIG. 14(a) shows the direction of current flow. To program a 0 into thecell 310-01, WL0 is set low and BL1 is set high, while setting the otherBL and WLs at proper voltages as shown in FIG. 14(b) to disable theother program-1 and program-0 diodes. The bold line in FIG. 14(b) showsthe direction of current flow.

The embodiments of constructing MRAM cells in a 2×2 array as shown inFIGS. 12(a)-14(b) are for illustrative purposes. Those skilled in theart understand that the number of cells, rows, or columns in a memorycan be constructed arbitrarily and rows and columns are interchangeable.

The programmable resistive devices can be used to construct a memory inaccordance with one embodiment. FIG. 15(a) shows a portion of aprogrammable resistive memory 100 constructed by an array 101 of n-rowby (m+1)-column single-diode-as-program-selector cells 110 and nwordline drivers 150-i, where i=0, 1, . . . , n−1, in accordance withone embodiment. The memory array 101 has m normal columns and onereference column for one shared sense amplifier 140 for differentialsensing. Each of the memory cells 110 has a resistive element 111coupled to the P terminal of a diode 112 as program selector and to abitline BLj 170-j (j=0, 1, . . . m−1) or reference bitline BLR0 175-0for those of the memory cells 110 in the same column. The N terminal ofthe diode 112 is coupled to a wordline WLBi 152-i through a localwordline LWLBi 154-i, where i=0, 1, . . . , n−1, for those of the memorycells 110 in the same row. Each wordline WLBi is coupled to at least onelocal wordline LWLBi, where i=0, 1, . . . , n−1. The LWLBi 154-i isgenerally constructed by a high resistivity material, such as N well,polysilicon, local interconnect, polymetal, active region, or metal gateto connect cells, and then coupled to the WLBi (e.g., a low-resistivitymetal WLBi) through conductive contacts or vias, buffers, orpost-decoders 172-i, where i=0, 1, . . . , n−1. Buffers or post-decoders172-i may be needed when using diodes as program selectors because thereare currents flowing through the WLBi, especially when one WLBi drivesmultiple cells for program or read simultaneously in other embodiments.The wordline WLBi is driven by the wordline driver 150-i with a supplyvoltage vddi that can be switched between different voltages for programand read. Each BLj 170-j or BLR0 175-0 is coupled to a supply voltageVDDP through a Y-write pass gate 1201 or 125 for programming, where eachBLj 1701 or BLR0 175-0 is selected by YSWBj (j=0, 1, . . . , m−1) orYSWRB0, respectively. The Y-write pass gate 120-j (j=0, 1, . . . , m−1)or 125 can be built by PMOS, though NMOS, diode, or bipolar devices canbe employed in some embodiments. Each BLj or BLR0 is coupled to adataline DLj or DLR0 through a Y-read pass gate 130-j or 135 selected byYSRj (j=0, 1, . . . , m−1) or YSRR0, respectively. In this portion ofmemory array 101, m normal datalines DLj (j=0, 1, . . . , m−1) areconnected to an input 160 of a sense amplifier 140. The referencedataline DLR0 provides another input 161 for the sense amplifier 140 (nomultiplex is generally needed in the reference branch). The output ofthe sense amplifiers 140 is Q0.

To program a cell, the specific WLBi and YSWBj are turned on and a highvoltage is supplied to VDDP, where i=0, 1, . . . n−1 and j=0, 1, . . . ,m−1. In some embodiments, the reference cells can be programmed to 0 or1 by turning on WLRBi, and YSWRB0, where i=0, 1, . . . , n−1. To read acell, a data column 160 can be selected by turning on the specific WLBiand YSRj, where i=0, 1, . . . , n−1, and j=0, 1, . . . , m−1, and areference cell coupled to the reference dataline DLR0 161 can beselected for the sense amplifier 140 to sense and compare the resistancedifference between normal/reference BLs and ground, while disabling allYSWBj and YSWRB0 where j=0, 1, . . . , m−1.

The programmable resistive devices can be used to construct a memory inaccordance with one embodiment. FIG. 15(b) shows a portion of aprogrammable resistive memory 100 constructed by an array 101 of n-rowby (m+1)-column cells 110, as shown in FIG. 6(c 1) and n wordlinedrivers 150-i, where i=0, 1, . . . , n−1, in accordance with oneembodiment. The memory array 101 has m normal columns and one referencecolumn for one shared sense amplifier 140 for differential sensing. Eachof the memory cells 110 has a resistive element 111 coupled to the Pterminal of a diode 112 as program selector, a MOS 113 as read programselector, and to a bitline BLj 170-j (j=0, 1, . . . m−1) or referencebitline BLR0 175-0 for those memory cells 110 in the same column. Thegate of the MOS 113 is coupled to a wordline WLBi 152-i through a localwordline LWLBi 154-i, where i=0, 1, . . . , n−1, for those of the memorycells 110 in the same row. Each wordline WLBi is coupled to at least onelocal wordline LWLBi, where i=0, 1, . . . , n−1. The LWLBi 154-i isgenerally constructed by a high resistivity material, such as N well,polysilicon, polycide, polymetal, local interconnect, active region, ormetal gate to connect cells, and then coupled to the WLBi (e.g., alow-resistivity metal WLBi) through conductive contacts or vias,buffers, or post-decoders 172-i, where i=0, 1, . . . , n−1. Buffers orpost-decoders 172-i may be needed when using diodes as program selectorsor MOS as read selectors to increase performances in other embodiments.The select lines (SLs), 159-0 through 159-(n−1), can be embodied similarto WLBs, that have local SLs, buffers, post-decoders, with low or highresistivity interconnect, etc. Each BLj 170-j or BLR0 175-0 is coupledto a supply voltage VDDP through a Y-write pass gate 120-j or 125 forprogramming, where each BLj 1701 or BLR0 175-0 is selected by YSWBj(j=0, 1, . . . , m−1) or YSWRB0, respectively. The Y-write pass gate120-j (j=0, 1, . . . , m−1) or 125 can be built by PMOS, though NMOS,diode, or bipolar devices can be employed in some embodiments. Each BLjor BLR0 is coupled to a dataline DLj or DLR0 through a Y-read pass gate130-j or 135 selected by YSRj (j=0, 1, . . . , m−1) or YSRR0,respectively. In this portion of memory array 101, m normal datalinesDLj (j=0, 1, . . . , m−1) are connected to an input 160 of a senseamplifier 140. The reference dataline DLR0 provides another input 161for the sense amplifier 140 (no multiplex is generally needed in thereference branch). The output of the sense amplifiers 140 is Q0.

To program a cell, the specific WLBi and YSWBj are turned on and a highvoltage is supplied to VDDP, where i=0, 1, . . . n−1 and j=0, 1, . . . ,m−1. In some embodiments, the reference cells can be programmed to 0 or1 by turning on WLRBi, and YSWRB0, where i=0, 1, . . . , n−1. To read acell, all SLs can be set to low and a dataline 160 can be selected byturning on the specific WLBi (read selector) and YSRj (Y read passgate), where i=0, 1, . . . , n−1, and j=0, 1, . . . , m−1, and areference cell coupled to the reference dataline DLR0 161 can beselected for the sense amplifier 140 to sense and compare the resistancedifference between normal and reference BLs to ground, while disablingall column write pass gates YSWBj and YSWRB0 where j=0, 1, . . . , m−1.

The programmable resistive devices can be used to construct a memory inaccordance with yet another embodiment. FIG. 15(b 1) shows an arrayarchitecture that is built on cells shown in FIG. 6(c 4). Programming aprogrammable resistive cell is by turning on the channel and the drainjunction of a PMOS by pulling the WL and SL low. Reading a programmableresistive cell is by turning on the channel of the PMOS with draincoupled to VDD. In this configuration, program current is high becauseof the combination of MOS channel and drain junction diode current. Readvoltage can be low because the PMOS is operated in triode region thathas very low voltage drop.

FIG. 15(b 1) shows a portion of a programmable resistive memory 100constructed by an array 101 of n-row by (m+1)-column cells 110, as shownin FIG. 6(c 4) and n wordline drivers 150-i, where i=0, 1, . . . , n−1,in accordance with one embodiment. The memory array 101 has m normalcolumns and one reference column for one shared sense amplifier 140 fordifferential sensing. Each memory cell 110 has a resistive element 111coupled to the source of a PMOS 112 as program selector and to a bitlineBLj 170-j (j=0, 1, . . . m−1) or reference bitline BLR0 175-0 for thosememory cells 110 in the same column. The gate of the PMOS 112 is coupledto a wordline WLBi 152-i through a local wordline LWLBi 154-i, wherei=0, 1, . . . , n−1, for those memory cells 110 in the same row. Eachwordline WLBi is coupled to at least one local wordline LWLBi, wherei=0, 1, . . . , n−1. The LWLBi 154-i is generally constructed by a highresistivity material, such as N well, polysilicon, polycide, polymetal,local interconnect, active region, or metal gate to connect cells, andthen coupled to the WLBi (e.g., a low-resistivity metal WLBi) throughconductive contacts or vias, buffers, or post-decoders 172-i, where i=0,1, . . . , n−1. Buffers or post-decoders 172-i may be needed when usingPMOS and/or drain junction diode as program selectors and PMOS as readselectors to increase performances in other embodiments. The selectlines (SLs), 159-0 through 159-(n−1), can be embodied similar to WLBs,that have local SLs, buffers, post-decoders, with low or highresistivity interconnect, etc. Each BLj 1701 or BLR0 175-0 is coupled toa supply voltage VDDP through a Y-write pass gate 120-j or 125 forprogramming, where each BLj 1701 or BLR0 175-0 is selected by YSWBj(j=0, 1, . . . , m−1) or YSWRB0 for programming, respectively. TheY-write pass gate 120-j (j=0, 1, . . . , m−1) or 125 can be built byPMOS, though NMOS, diode, or bipolar devices can be employed in someembodiments. Each BLj or BLR0 is coupled to a dataline DLj or DLR0through a Y-read pass gate 130-j or 135 selected by YSRj (j=0, 1, . . ., m−1) or YSRR0, respectively, for read. In this portion of memory array101, m normal datalines DLj (j=0, 1, . . . , m−1) are connected to aninput 160 of a sense amplifier 140. The reference dataline DLR0 providesanother input 161 for the sense amplifier 140 (no multiplex is generallyneeded in the reference branch except for providing different referenceresistors). The output of the sense amplifiers 140 is Q0.

To program a cell, the specific WLBi for WLB/SL and YSWBj are turned onand a high voltage is supplied to VDDP, where i=0, 1, . . . n−1 and j=0,1, . . . , m−1. The drain of the PMOS in the selected cell can be pulledlow so that the drain junction diode will be turned on to conductcurrent flowing through the PRD 111. The PMOS gate can be also turned onto provide more MOS channel current in additional to the diode currentto program the PRD 111. To read a cell, all SLs (159-0 through159-(n−1)) can be set to VDD while pulling the WLBi low and turn on YSRj(Y read pass gate), where i=0, 1, . . . , n−1, and j=0, 1, . . . , m−1,to select a cell for sensing. A reference cell coupled to a referencedataline DLR0 161 can also be selected for sensing. In some embodiments,the reference cells can be programmed to 0 or 1 by turning on WLRBi, andYSWRB0, where i=0, 1, . . . , n−1. A sense amplifier 140 can compare thecurrents flowing through the cell and the reference branches todetermine the cell resistance into logic 0 or 1. During reading, allcolumn write pass gates YSWBj and YSWRB0 where j=0, 1, . . . , m−1, arenormally disabled, except for low-voltage concurrent programming to testprogram circuits. In other embodiment, the WL and SL of each cell can becoupled together for programming or reading so that needs no duplicatedlocal WL/SL and post-decoders.

FIG. 15(c) shows a schematic of a portion of an OTP array 200, accordingto another embodiment. The OTP array 200 as 2n rows and 2m columnsorganized in a half-populated two dimensional array for a total of 2 nmcells, i.e. the cells at even rows are only coupled to even columns, andthe cells at odd rows are only coupled to the odd columns. The bitlines(BLj, j=0, 1, 2, . . . , 2m−1) run in the column direction and thesource lines/wordline bar (SLi/WLBi, i=0, 1, 2, . . . , 2n−1) run in therow direction. At each intersection of even-row/even-column andodd-row/odd-column is an OTP cell corresponding to the cell shown inFIG. 6(c 1). For example, a cell 221-0,0 is located at (row,column)=(0,0), another cell 221-1,1 is located at (1,1), and so on.Another two reference rows SLe/WLRBe and SLo/WLRBo are provided fordifferential sensing. The reference cells are similar to the normalcells except that the fuse resistance is set about half-way betweenstate 0 and state 1 resistance. This can be achieved by adjusting theratio of fuse width and length in the reference cells, or blocking aportion of silicide on the fuse or put an additional reference resistorin serial with the reference cells outside of the OTP array. Thereference cells on the even row of the reference row are coupled to oddcolumns, such as 221-e,1, 221-e,3, etc. And the reference cells on theodd row of the reference row are coupled to even columns, such as221-0,0, 221-0,2, etc. During read, when a cell in an even column isturned on, another reference cell in the adjacent odd column is alsoturned on too so that BLs in the same column pair can be used fordifferential sensing. Each BLj has a PMOS pullup 222-j coupled to aprogram voltage supply VDDP with the gates coupled to YWBj, where j=0,1, 2, . . . , 2m−1. During program, a cell can be selected by turning ona SLi (i=0, 1, 2, . . . , 2n−1) and YWBj (j=0, 1, 2, . . . , 2m−1) toconduct a current flowing through a diode in the selected cell and thusprogram the cell into a different resistance state. There can be morethan one pair of reference SL/WLR with different reference resistancesupon select to suit different ranges of post-program resistances.

In FIG. 15(c), there are m sense amplifiers 230-j, j=0, 1, 2, . . . ,m−1 to sense data between two adjacent BLs. In the sense amplifier230-0, for example, a pair of NMOS 231 and 232 have their drains andgates cross-coupled and their sources coupled to a drain of a NMOSpulldown device 236. Similarly, a pair of PMOS 233 and 234 have theirdrains and gates cross-coupled and their sources coupled to a drain of aPMOS pullup 237. The drains of the NMOS 231 and PMOS 233 are coupled toBL0 and the drains of the PMOS 232 and PMOS 234 are coupled to BL1. Twoinverters 240 and 241 are coupled to the BL0 and BL1 for local output q0and q1, respectively. The gates of the NMOS 236 and PMOS 237 are coupledto ϕn and ϕp, respectively. A PMOS equalizer 235 has a gate coupled toϕn to equalize the BL0 and BL1 voltages before sensing. The PMOSequalizer 235 can be an NMOS with gate coupled to ϕp in otherembodiment. The equalizer 235 can be replaced by a pair of BL0 and BL1pullups or pulldowns to VDD or ground with gates coupled to ϕn or ϕp,respectively, in another embodiment. The equalizer or pullups/pulldownscan be coupled to a different control signal in yet another embodiment.If the OTP array have k outputs Q0, Q1, . . . , Q(k−1), there can bes=2m/k pairs of ϕn and ϕp to select and activate k sense amplifiers. The2m local outputs, q0, q1, . . . , q(2m−1) can be multiplexed in amultiplexer 205 to generate k outputs Q0, Q1, . . . , Q(k−1)accordingly. The sensing scheme can be applied to the cells using diodeor MOS as read selector.

FIG. 15(d) shows a portion of timing diagram to illustrate how a senseamplifier operates, corresponding to the sense amplifiers 230-j (j=0, 1,2, . . . , m−1) in FIG. 15(c). The sensing procedure is to turn on thePMOS half-latch first and then turn on the NMOS half-latch whiledisabling the selected WLB and RWLB. The BL of the memory cell has aprogrammable resistive element in serial with a diode or MOS as readselector to SL. All normal and reference source lines are set to high inthe read mode. At time T0, X- and Y-addresses are selected for a newread operation. At T1, ϕn is set low and ϕp is set high to disable thecross-coupled latch consists of MOS 231, 232, 233, and 234 and equalizethe BL0 and BL1 so that the data from the previous sensing can be reset.At T2, an even/odd WLB and a corresponding odd/even WLRB are turned onso that a normal and a reference cells in the same BL pair can beselected for sensing. At T3, ϕp is set low to turn on the half latch ofPMOS 233 and 234. The BL0 and BL1 differential voltages can be sensedand latched in a PMOS latch consisting of PMOS 233 and 234. At T4, theWLB and WLRB are turned off and the NMOS pulldown is activated bysetting ϕn high to enable the NMOS half latch consisting of NMOS 231 and232. Full-swing local outputs q0 and q1 will be ready at the outputs ofthe inverters 240 and 241, respectively. The local outputs q0 throughq(2m−1) can be further selected by a multiplexer 250 to generate Q0, Q1,. . . , Q(k−1). The timing sequences of turning off WLB/WLRB and turningon ϕn are not critical.

The programmable resistive devices can be used to construct a memory inaccordance with one embodiment. FIG. 16(a) shows a portion of aprogrammable resistive memory 100 constructed by an array 101 of3-terminal MRAM cells 110 in n rows and m+1 columns and n pairs ofwordline drivers 150-i and 151-i, where i=0, 1, . . . , n−1, accordingto one embodiment. The memory array 101 has m normal columns and onereference column for one shared sense amplifier 140 for differentialsensing. Each of the memory cells 110 has a resistive element 111coupled to the P terminal of a program-0 diode 112 and N terminal of aprogram-1 diode 113. The program-0 diode 112 and the program-1 diode 113serve as program selectors. Each resistive element 111 is also coupledto a bitline BLj 1701 (j=0, 1, . . . m−1) or reference bitline BLR0175-0 for those of the memory cells 110 in the same column. The Nterminal of the diode 112 is coupled to a wordline WLNi 152-i through alocal wordline LWLNi 154-i, where i=0, 1, . . . , n−1, for those of thememory cells 110 in the same row. The P terminal of the diode 113 iscoupled to a wordline WLPi 153-i through a local wordline LWLPi 155-i,where i=0, 1, . . . , n−1, for those cells in the same row. Eachwordline WLNi or WLPi is coupled to at least one local wordline LWLNi orLWLPi, respectively, where i=0, 1, . . . , n−1. The LWLNi 154-i andLWLPi 155-i are generally constructed by a high resistivity material,such as N well, polysilicon, local interconnect, polymetal, activeregion, or metal gate to connect cells, and then coupled to the WLNi orWLPi (e.g., low-resistivity metal WLNi or WLPi) through conductivecontacts or vias, buffers, or post-decoders 172-i or 173-i respectively,where i=0, 1, . . . , n−1. Buffers or post-decoders 172-i or 173-i maybe needed when using diodes as program selectors because there arecurrents flowing through WLNi or WLPi, especially when one WLNi or WLPidrivers multiple cells for program or read simultaneously in someembodiments. The wordlines WLNi and WLPi are driven by wordline drivers150-i and 151-i, respectively, with a supply voltage vddi that can beswitched between different voltages for program and read. Each BLj 170-jor BLR0 175-0 is coupled to a supply voltage VDDP through a Y-write-0pass gate 1201 or 125 to program 0, where each BLj 1701 or BLR0 175-0 isselected by YSOWBj (j=0, 1, . . . , m−1) or YS0WRB0, respectively.Y-write-0 pass gate 120-j or 125 can be built by PMOS, though NMOS,diode, or bipolar devices can be employed in other embodiments.Similarly, each BLj 1701 or BLR0 175-0 is coupled to a supply voltage 0Vthrough a Y-write-1 pass gate 121-j or 126 to program 1, where each BLj170-j or BLR0 175-0 is selected by YS1Wj (j=0, 1, . . . , m−1) orYS1WR0, respectively. Y-write-1 pass gate 121-j or 126 is can be builtby NMOS, though PMOS, diode, or bipolar devices can be employed in otherembodiments. Each BLj or BLR0 is coupled to a dataline DLj or DLR0through a Y-read pass gate 1301 or 135 selected by YSRj (j=0, 1, . . . ,m−1) or YSRR0, respectively. In this portion of memory array 101, mnormal datalines DLj (j=0, 1, . . . , m−1) are connected to an input 160of a sense amplifier 140. Reference dataline DLR0 provides another input161 for the sense amplifier 140, except that no multiplex is generallyneeded in a reference branch. The output of the sense amplifier 140 isQ0.

To program a 0 into a cell, the specific WLNi, WLPi and BLj are selectedas shown in FIG. 13(a) or 13(b) by wordline drivers 150-i, 151-i, andY-pass gate 1201 by YSOWBj, respectively, where i=0, 1 . . . n−1 andj=0, 1, . . . , m−1, while the other wordlines and bitlines are alsoproperly set. A high voltage is applied to VDDP. In some embodiments,the reference cells can be programmed into 0 by setting proper voltagesto WLRNi 158-i, WLRPi 159-i and YS0WRB0, where i=0, 1, . . . , n−1. Toprogram a 1 to a cell, the specific WLNi, WLPi and BLj are selected asshown in FIG. 12(a) or 12(b) by wordline driver 150-i, 151-i, and Y-passgate 121-j by YS1Wj, respectively, where i=0, 1, . . . n−1 and j=0, 1, .. . , m−1, while the other wordlines and bitlines are also properly set.In some embodiments, the reference cells can be programmed to 1 bysetting proper voltages to WLRNi 158-i, WLRPi 159-i and YS1WR0, wherei=0, 1, . . . , n−1. To read a cell, a data column 160 can be selectedby turning on the specific WLNi, WLPi and YSRj, where i=0, 1, . . . ,n−1, and j=0, 1, . . . , m−1, and a reference cell coupled to thereference dataline DLR 161 for the sense amplifier 140 to sense andcompare the resistance difference between normal/reference BLs andground, while disabling all YSOWBj, YS0WRB0, YS1Wj and YS1WR0, wherej=0, 1, . . . , m−1.

Another embodiment of constructing an MRAM memory with 2-terminal MRAMcells is shown in FIG. 16(b), provided the voltage difference VDDP,between high and low states, is less than twice of the diode's thresholdvoltage Vd, i.e., VDDP<2*Vd. As shown in FIG. 16(b), two wordlines perrow WLNi 152-i and WLPi 153-i in FIG. 16(a) can be merged into onewordline driver WLNi 152-i, where i=0, 1, . . . , n−1. Also, the localwordlines LWLNi 154-i and LWLP 155-i per row in FIG. 16(a) can be mergedinto one local wordline LWLNi 154-i, where i=0, 1, . . . , n−1, as shownin FIG. 16(b). Still further, two wordline drivers 150-i and 151-i inFIG. 16(a) can be merged into one, i.e., wordline driver 150-i. The BLsand WLNs of the unselected cells are applied with proper program 1 and 0conditions as shown in FIGS. 14(a) and 14(b), respectively. Since halfof wordlines, local wordlines, and wordline drivers can be eliminated inthis embodiment, cell and macro areas can be reduced substantially.

Differential sensing is a common for programmable resistive memory,though single-end sensing can be used in other embodiments. FIGS. 17(a),17(b), and 17(c) show three other embodiments of constructing referencecells for differential sensing. In FIG. 17(a), a portion of memory 400has a normal array 180 of n×m cells, two reference columns 150-0 and150-1 of n×1 cells each storing all data 0 and 1 respectively, m+1Y-read pass gates 130, and a sense amplifier 140. As an example, n=8 andm=8 are used to illustrate the concept. There are n wordlines WLBi and nreference wordlines WLRBi for each column, where i=0, 1, . . . , n−1.When a wordline WLBi is turned on to access a row, a correspondingreference wordline WLRBi (i=0, 1, . . . , n−1) is also turned on toactivate two reference cells 170-0 and 170-1 in the same row to providemid-level resistance after proper scaling in the sense amplifier. Theselected dataline 160 along with the reference dataline 161 are input toa sense amplifier 140 to generate an output Q0. In this embodiment, eachWLRBi and WLBi (i=0, 1, . . . , n−1) are hardwired together and everycells in the reference columns need to be pre-programmed before read.

FIG. 17(b) shows another embodiment of using a reference cell externalto a reference column. In FIG. 17(b), a portion of memory 400 has anormal array 180 of n×m cells, a reference column 150 of n×1 cells, m+1Y-read pass gates 130, and a sense amplifier 140. When a wordline WLBi(i=0, 1, . . . , n−1) is turned on, none of the cells in the referencecolumn 150 are turned on. An external reference cell 170 with apre-determined resistance is turned on instead by an external referencewordline WLRB. The selected dataline 160 and the reference dataline 161are input to a sense amplifier 140 to generate an output Q0. In thisembodiment, all internal reference wordlines WLRBi (i=0, 1, . . . , n−1)in each row are disabled. The reference column 150 provides a loading tomatch with that of the normal columns. The reference cells or thereference column 150 can be omitted in other embodiments.

FIG. 17(c) shows another embodiment of constructing reference cells fordifferential sensing. In FIG. 17(c), a portion of memory 400 has anormal array 180 of n×m cells, one reference column 150 of n×1, tworeference rows 175-0 and 175-1 of 1×m cells, m+1 Y-read pass gates 130,and a sense amplifier 140. As an example, n=8 and m=8 are used toillustrate the approach. There are n wordlines WLBi and 2 referencewordlines WLRB0 175-0 and WLRB1 175-1 on top and bottom of the array,where i=0, 1, . . . , n−1. When a wordline WLBi (i=0, 1, . . . , n−1) isturned on to access a row, the reference wordline WLRB0 and WLRB1 arealso turned on to activate two reference cells 170-0 and 170-1 in theupper and lower right corners of the array 180, which store data 0 and 1respectively. The selected dataline 160 along with the referencedataline 161 are input to a sense amplifier 140 to generate an outputQ0. In this embodiment, all cells in the reference column 150 aredisabled except that the cells 170-0 and 170-1 on top and bottom of thereference column 150. Only two reference cells are used for the entiren×m array that needs to be pre-programmed before read.

For those programmable resistive devices that have a very smallresistance ratio between states 1 and 0, such as 2:1 ratio in MRAM,FIGS. 17(a) and 17(c) are desirable embodiments, depending on how manycells are suitable for one pair of reference cells. Otherwise, FIG.17(b) is a desirable embodiment for electrical fuse or PCM that hasresistance ratio of more than about 10.

FIGS. 15, 16(a), 16(b), 17(a), 17(b), and 17(c) show only a fewembodiments of a portion of programmable resistive memory in asimplified manner. The memory array 101 in FIGS. 15, 16(a), and 16(b)can be replicated s times to read or program s-cells at the same time.In the case of differential sensing, the number of reference columns tonormal columns may vary and the physical location can also vary relativeto the normal data columns. Rows and columns are interchangeable. Thenumbers of rows, columns, or cells likewise may vary. For those skilledin the art understand that the above descriptions are for illustrativepurpose. Various embodiments of array structures, configurations, andcircuits are possible and are still within the scope of this invention.

The portions of programmable resistive memories shown in FIGS. 15,16(a), 16(b), 17(a), 17(b) and 17(c) can include different types ofresistive elements. The resistive element can be an electrical fuseincluding a fuse fabricated from an interconnect, contact/via fuse,contact/via anti-fuse, or gate oxide breakdown anti-fuse. Theinterconnect fuse can be formed from silicide, polysilicon, silicidedpolysilicon, metal, metal alloy, local interconnect, thermally isolatedactive region, or some combination thereof, or can be constructed from aCMOS gate. The resistive element can also be fabricated fromphase-change material in PCRAM, resistive film in RRAM/CBRAM, or MTJ inMRAM, etc. For the electrical fuse fabricated from an interconnect,contact, or via fuse, programming requirement is to provide asufficiently high current, about 4-20 mA range, for a few microsecondsto blow the fuse by electro-migration, heat, ion diffusion, or somecombination thereof. For anti-fuse, programming requirement is toprovide a sufficiently high voltage to breakdown the dielectrics betweentwo ends of a contact, via or CMOS gate/body. The required voltage isabout 6-7V for a few millisecond to consume about 100 μA of current intoday's technologies. Programming Phase-Change Memory (PCM) requiresdifferent voltages and durations for 0 and 1. Programming to a 1 (or toreset) requires a high and short voltage pulse applied to thephase-change film. Alternatively, programming to a 0 (or to set)requires a low and long voltage pulse applied to the phase change film.The reset needs about 3V for 50 ns and consumes about 300 μA, while setneeds about 2V for 300 ns and consumes about 100 μA. For MRAM, the highand low program voltages are about 2-3V and 0V, respectively, and thecurrent is about +/−100-200 μA.

Most programmable resistive devices have a higher voltage VDDP (˜2-3V)for programming than the core logic supply voltage VDD (˜1.0V) forreading. FIG. 18(a) shows a schematic of a wordline driver circuit 60according to one embodiment. The wordline driver includes devices 62 and61, as shown as the wordline driver 150 in FIGS. 15, 16(a) and 16(b).The supply voltage vddi is further coupled to either VDDP or VDD throughpower selectors 63 and 64 (e.g., PMOS power selectors) respectively. Theinput of the wordline driver Vin is from an output of an X-decoder. Insome embodiments, the power selectors 63 and 64 are implemented as thickoxide I/O devices to sustain high voltage. The bodies of power selector63 and 64 can be tied to vddi to prevent latchup.

Similarly, bitlines tend to have a higher voltage VDDP (˜2-3V) forprogramming than the core logic supply voltage VDD (˜1.0V) for reading.FIG. 18(b) shows a schematic of a bitline circuit 70 according to oneembodiment. The bitline circuit 70 includes a bitline (BL) coupled toVDDP and VDD through power selectors 73 and 74 (e.g., PMOS powerselectors), respectively. If the bitline needs to sink a current such asin an MRAM, an NMOS pulldown device 71 can be provided. In someembodiments, the power selectors 73 and 74 as well as the pulldowndevice 71 can be implemented as thick-oxide I/O devices to sustain highvoltage. The bodies of power selector 73 and 74 can be tied to vddi toprevent latchup.

Using junction diodes as program selectors may have high leakage currentif a memory size is very large. Power selectors for a memory can helpreducing leakage current by switching to a lower supply voltage or eventurning off when a portion of memory is not in use. FIG. 18(c) shows aportion of memory 85 with an internal power supply VDDP coupled to anexternal supply VDDPP and a core logic supply VDD through powerselectors 83 and 84. VDDP can even be coupled to ground by an NMOSpulldown device 81 to disable this portion of memory 85, if this portionof memory is temporarily not in use.

FIG. 19(a) shows one embodiment of a schematic of a pre-amplifier 100according to one embodiment. The pre-amplifier 100 needs specialconsiderations because the supply voltage VDD for core logic devices isabout 1.0V that does not have enough head room to turn on a diode tomake sense amplifiers functional, considering a diode's threshold isabout 0.7V. One embodiment is to use another supply VDDR, higher thanVDD, to power at least the first stage of sense amplifiers. Theprogrammable resistive cell 110 shown in FIG. 19(a) has a resistiveelement 111 and a diode 112 as program selector, and can be selected forread by asserting YSR′ to turn on a gate of a MOS 130 and wordline barWLB. The MOS 130 is a Y-select pass gate to select a signal from one ofthe at least one bitline(s) (BL) coupled to cells to a dataline (DL) forsensing. The pre-amplifier 100 also has a reference cell 115 including areference resistive element 116 and a reference diode 117. The referencecell 115 can be selected for differential sensing by asserting YSRR′ toturn on a gate of a MOS 131 and reference wordline WLRB. The MOS 131 isa reference pass gate to pass a signal from a reference bitline (BLR) toa reference dataline (DLR) for sensing. YSRR′ is similar to YSR′ to turnon a reference cell rather than a selected cell, except that thereference branch typically has only one reference bitline (BLR). Theresistance Ref of the reference resistive element 116 can be set at aresistance approximately half-way between the minimum of state 1 andmaximum of state 0 resistance. MOS 151 is for pre-charging DL and DLR tothe same voltage before sensing by a pre-charge signal Vpc.Alternatively, the DL or DLR can be pre-charged to each other or to adiode voltage above ground in other embodiments. The reference resistorelement 116 can be a plurality of resistors for selection to suitdifferent cell resistance ranges in another embodiment.

The drains of MOS 130 and 131 are coupled to sources of NMOS 132 and134, respectively. The gates of 132 and 134 are biased at a fixedvoltage Vbias. The channel width to length ratios of NMOS 132 and 134can be relatively large to clamp the voltage swings of dataline DL andreference dataline DLR, respectively. The drain of NMOS 132 and 134 arecoupled to drains of PMOS 170 and 171, respectively. The drain of PMOS170 is coupled to the gate of PMOS 171 and the drain of PMOS 171 iscoupled to the gate of PMOS 170. The outputs V+ and V− of thepre-amplifier 100 are the drains of PMOS 170 and PMOS 171 respectively.The sources of PMOS 170 and PMOS 171 are coupled to a read supplyvoltage VDDR. The outputs V+ and V− are pulled up by a pair of PMOS 175to VDDR when the pre-amplifier 100 is disabled. VDDR is about 2-3V(which is higher than about 1.0V VDD of core logic devices) to turn onthe diode selectors 112 and 117 in the programmable resistive cell 110and the reference cell 115, respectively. The CMOS 130, 131, 132, 134,170, 171, and 175 can be embodied as thick-oxide I/O devices to sustainhigh voltage VDDR. The NMOS 132 and 134 can be native NMOS (i.e. thethreshold voltage is ˜0V) to allow operating at a lower VDDR. In anotherembodiment, the read selectors 130 and 131 can be PMOS devices. Inanother embodiment, the sources of PMOS 170 and 171 can be coupled tothe drain of a PMOS pullup (an activation device not shown in FIG.19(a)), whose source is then coupled to VDDR. This sense amplifier canbe activated by setting the gate of the PMOS pullup low after turning onthe reference and Y-select pass gates.

FIG. 19(b) shows one embodiment of a schematic of an amplifier 200according to one embodiment. In another embodiment, the outputs V+ andV− of the pre-amplifier 100 in FIG. 19(a) can be coupled to gates ofNMOS 234 and 232, respectively, of the amplifier 200. The NMOS 234 and232 can be relatively thick oxide I/O devices to sustain the high inputvoltage V+ and V− from a pre-amplifier. The sources of NMOS 234 and 232are coupled to drains of NMOS 231 and 230, respectively. The sources ofNMOS 231 and 230 are coupled to a drain of an NMOS 211. The gate of NMOS211 is coupled to a clock ϕ to turn on the amplifier 200, while thesource of NMOS 211 is coupled to ground. The drains of NMOS 234 and 232are coupled to drains of PMOS 271 and 270, respectively. The sources ofPMOS 271 and 270 are coupled to a core logic supply VDD. The gates ofPMOS 271 and NMOS 231 are connected and coupled to the drain of PMOS270, as a node Vp. Similarly, the gates of PMOS 270 and NMOS 230 areconnected and coupled to the drain of PMOS 271, as a node Vn. The nodesVp and Vn are pulled up by a pair of PMOS 275 to VDD when the amplifier200 is disabled when ϕ goes low. The output nodes Vout+ and Vout− arecoupled to nodes Vn and Vp through a pair of inverters as buffers.

FIG. 19(c) shows a timing diagram of the pre-amplifier 100 and theamplifier 200 in FIGS. 19(a) and 19(b), respectively. The X- andY-addresses AX/AY are selected to read a cell. After some propagationdelays, a cell is selected for read by turning WLB low and YSR high tothereby select a row and a column, respectively. Before activating thepre-amplifier 100, a pulse Vpc can be generated to precharge DL and DLRto ground, to a diode voltage above ground, or to each other. Thepre-amplifier 100 would be very slow if the DL and DLR voltages are highenough to turn off the cascode devices (e.g., NMOS 132 and 134). Afterthe pre-amplifier outputs V+ and V− are stabilized, the clock ϕ 0 is sethigh to turn on the amplifier 200 and to amplify the final output Vout+and Vout− into full logic levels. The precharge scheme can be omitted inother embodiments.

FIG. 20(a) shows another embodiment of a pre-amplifier 100′, similar tothe pre-amplifier 100 in FIG. 19(a), with PMOS pull-ups 171 and 170configured as current mirror loads. The reference branch can be turnedon by a level signal, Sense Amplifier Enable (SAEN), to enable thepre-amplifier, or by a cycle-by-cycle signal YSRR′ as in FIG. 19(a). MOS151 is for pre-charging DL and DLR to the same voltage before sensing bya pre-charge signal Vpc. Alternatively, the DL or DLR can be pre-chargedto ground or to a diode voltage above ground in other embodiments. Inthis embodiment, the number of the reference branches can be sharedbetween different pre-amplifiers at the expense of increasing powerconsumption. The reference resistor 116 can be a plurality of resistorsfor selection to suit different cell resistance ranges in anotherembodiment.

FIG. 20(b) shows level shifters 300 according to one embodiment. The V+and V− from the pre-amplifier 100, 100′ outputs in FIG. 19(a) or FIG.20(a) are coupled to gates of NMOS 301 and 302, respectively. The drainsof NMOS 301 and 302 are coupled to a supply voltage VDDR. The sources ofNMOS 301 and 302 are coupled to drains of NMOS 303 and 304,respectively, which have gates and drains connected as diodes to shiftthe voltage level down by one Vtn, the threshold voltage of an NMOS. Thesources of NMOS 303 and 304 are coupled to the drains of pulldowndevices NMOS 305 and 306, respectively. The gates of NMOS 305 and 306can be turned on by a clock 0. The NMOS 301, 302, 303 and 304 can bethick-oxide I/O devices to sustain high voltage VDDR. The NMOS 303 and304 can be cascaded more than once to shift V+ and V− further to propervoltage levels Vp and Vn. In another embodiment, the level shiftingdevices 303 and 304 can be built using PMOS devices.

FIG. 20(c) shows another embodiment of an amplifier 200′ withcurrent-mirror loads having PMOS 270 and 271 as loads. The inputs Vp andVn of the amplifier 200′ are from the outputs Vp and Vn of the levelshifter 300 in FIG. 20(b) that can be coupled to gates of NMOS 231 and230, respectively. The drains of NMOS 231 and 230 are coupled to drainsof PMOS 271 and 270 which provide current-mirror loads. The drain andgate of PMOS 271 are connected and coupled to the gate of PMOS 270. Thesources of NMOS 231 and 230 are coupled to the drain of an NMOS 211,which has the gate coupled to a clock signal ϕ and the source to ground.The clock signal ϕ enables the amplifier 200′. The drain of PMOS 270provides an output Vout+. The PMOS pullup 275 keeps the output Vout+atlogic high level when the amplifier 200′ is disabled.

FIG. 20(d) shows one embodiment of a pre-amplifier 100′ based on allcore devices according to one embodiment. The programmable resistivecell 110′ has a resistive element 111′ and a diode 112′ as programselector that can be selected for read by asserting YSR′ to turn on agate of a MOS 130′ and wordline bar WLB. The MOS 130′ is a Y-select passgate to select a signal from one of the at least one bitline(s) (BL)coupled to cells to a dataline (DL) for sensing. The pre-amplifier 100′also has a reference cell 115′ including a reference resistive element116′ and a reference diode 117′. The reference resistor 116′ can be aplurality of resistors for selection to suit different cell resistanceranges in another embodiment. The reference cell 115′ can be selectedfor differential sensing by asserting YSRR′ to turn on a gate of a MOS131′ and reference wordline WLRB. The MOS 131′ is a reference pass gateto pass a signal from a reference bitline (BLR) to a reference dataline(DLR) for sensing. YSRR′ is similar to YSR′ to turn on a reference cellrather than a selected cell, except that the reference branch typicallyhas only one reference bitline (BLR). The drains of MOS 130′ and 131′are coupled to drains of PMOS 170′ and 171′, respectively. The gate of170′ is coupled to the drain of 171′ and the gate of 171′ is coupled tothe drain of 170′. The sources of MOS 170′ and 171′ are coupled to thedrains of MOS 276′ and 275′, respectively. The gate of 275′ is coupledto the drain of 276′ and the gate of 276′ is coupled to the drain of275′. The drains of 170′ and 171′ are coupled by a MOS equalizer 151′with a gate controlled by an equalizer signal Veq1. The drains of 276′and 275′ are coupled by a MOS equalizer 251′ with a gate controlled byan equalizer signal Veq0. The equalizer signals Veq0 and Veq1 can be dcor ac signals to reduce the voltage swing in the drains of 170′, 171′and 275′, 276′, respectively. By reducing the voltage swings of the PMOSdevices in the pullup and by stacking more than one level ofcross-coupled PMOS, the voltage swings of the 170′, 171′, 275′, and 276′can be reduced to VDD range so that core logic devices can be used. Forexample, the supply voltage of the sense amplifier VDDR is about 2.5V,while the VDD for core logic devices is about 1.0V. The DL and DLR areabout 1V, based on diode voltage of about 0.7V with a few hundredmillivolts drop for resistors and pass gates. If the cross-coupled PMOSare in two-level stacks, each PMOS only endures voltage stress of(2.5−1.0)/2=0.75V. Alternatively, merging MOS 275′ and 276′ into asingle MOS or using a junction diode in the pullup is anotherembodiment. Inserting low-Vt NMOS as cascode devices between 170′ and130′; 171′ and 131′ is another embodiment. The output nodes from thedrains of 170′ and 171′ are about 1.0-1.2V so that the sense amplifieras shown in FIG. 19(b) can be used with all core logic devices.

FIG. 20(e) shows another embodiment of a pre-amplifier 100″ with anactivation device 275″ according to one embodiment. The programmableresistive cell 110″ has a resistive element 111″ and a diode 112″ asprogram selector that can be selected for read by asserting YSR″ to turnon a gate of a MOS 130″ and wordline bar WLB. The MOS 130″ is a Y-selectpass gate to select a signal from one of the at least one bitline(s)(BL) coupled to cells to a dataline (DL) for sensing. The pre-amplifier100″ also has a reference cell 115″ including a reference resistiveelement 116″ and a reference diode 117″. The reference resistor 116 canbe a plurality of resistors to suit different cell resistance ranges inanother embodiment. The reference cell 115″ can be selected fordifferential sensing by asserting YSRR″ to turn on a gate of a MOS 131″and reference wordline WLRB. The MOS 131″ is a reference pass gate topass a signal from a reference bitline (BLR) to a reference dataline(DLR) for sensing. YSRR″ is similar to YSR″ to turn on a reference cellrather than a selected cell, except that the reference branch typicallyhas only one reference bitline (BLR). The drains of MOS 130″ and 131″are coupled to the sources of MOS 132″ and 134″, respectively. Thedrains of MOS 132″ and 134″ are coupled to the drains of PMOS 170″ and171″, respectively. The gate of 170″ is coupled to the drain of 171″ andthe gate of 171″ is coupled to the drain of 170″. The sources of MOS170″ and 171″ are coupled to the drain of MOS 275″ whose source iscoupled to a supply voltage and gate coupled to a Sensing Enable Bar(SEB). The drains of 170″ and 171″ are coupled by a MOS equalizer 251″with a gate controlled by an equalizer signal Veq0. The sources of 132″and 134″ are coupled by a MOS equalizer 151″ with a gate controlled byan equalizer signal Veq1. The equalizer signals Veq0 and Veq1 can be dcor ac signals to reduce the voltage swings in the sources of 170″, 171″and 132″, 134″, respectively.

FIGS. 19(a), 20(a), 20(d) and 20(e) only show four of many pre-amplifierembodiments. Similarly, FIGS. 19(b), 20(c) and 20(b) only show severalof many amplifier and level shifter embodiments. Various combinations ofpre-amplifiers, level shifters, and amplifiers in NMOS or PMOS, in corelogic or I/O devices, with devices stacked or with an activation device,operated under high voltage VDDR or core supply VDD can be constructeddifferently, separately, or mixed. The equalizer devices can be embodiedas PMOS or NMOS, and can be activated by a dc or ac signal. In someembodiments, the precharge or equalizer technique can be omitted.

FIGS. 21(a), 21(b), and 21(c) show a flow chart depicting embodiments ofa program method 700, a read method 800 and 800′, respectively, for aprogrammable resistive memory in accordance with certain embodiments.The methods 700 and 800 are described in the context of a programmableresistive memory, such as the programmable resistive memory 100 in FIGS.15(a), 16(a), and 16(b). The method 800′ is described in the context ofa programmable resistive memory, such as the programmable resistivememory 100 in FIGS. 15(b) and 15(c). In addition, although described asa flow of steps, one of ordinary skilled in the art will recognize thatat least some of the steps may be performed in a different order,including simultaneously, or skipped.

FIG. 21(a) depicts a method 700 of programming a programmable resistivememory in a flow chart according to one embodiment. In the first step710, proper power selectors can be selected so that high voltages can beapplied to the power supplies of wordline drivers and bitlines. In thesecond step 720, the data to be programmed in a control logic (not shownin FIGS. 15(a), 15(b), 15(c), 16(a), and 16(b)) can be analyzed,depending on what types of programmable resistive devices. Forelectrical fuse, this is a One-Time-Programmable (OTP) device such thatprogramming always means blowing fuses into a non-virgin state and isirreversible. Program voltage and duration tend to be determined byexternal control signals, rather than generated internally from thememory. To more easily program OTP, programming pulses can be appliedmore than one shot consecutively when programming each cell in oneembodiment. A shot pulse can also be applied to all cells in a singlepass and then selectively applied more shots for those cells that arehard to program in another pass to reduce the overall programming timein another embodiment. For PCM, programming into a 1 (to reset) andprogramming into a 0 (to set) require different voltages and durationssuch that a control logic determines the input data and select properpower selectors and assert control signals with proper timings. ForMRAM, the directions of current flowing through MTJs are more importantthan time duration. A control logic determines proper power selectorsfor wordlines and bitlines and assert control signals to ensure acurrent flowing in the desired direction for desired time. In the thirdstep 730, a cell in a row can be selected and the corresponding localwordline can be turned on. In the fourth step 740, sense amplifiers canbe disabled to save power and prevent interference with the programoperations. In the fifth step 750, a cell in a column can be selectedand the corresponding Y-write pass gate can be turned on to couple theselected bitline to a supply voltage. In the step 760, a desired currentcan be driven for a desired time in an established conduction path. Inthe step 770, the data are written into the selected cells. For mostprogrammable resistive memories, this conduction path is from a highvoltage supply through a bitline select, resistive element, diode asprogram selector, and an NMOS pulldown of a local wordline driver toground. Particularly, for programming a 1 to an MRAM, the conductionpath is from a high voltage supply through a PMOS pullup of a localwordline driver, diode as program selector, resistive element, andbitline select to ground.

FIG. 21(b) depicts a method 800 of reading a programmable resistivememory in a flow chart according to one embodiment. In the first step810, proper power selectors can be selected to provide supply voltagesfor local wordline drivers, sense amplifiers, and other circuits. In thesecond step 820, all Y-write pass gates, i.e. bitline program selectors,can be disabled. In the third step 830, desired local wordline(s) can beselected so that the diode(s) as program selector(s) have a conductionpath to ground. In the fourth step 840, sense amplifiers can be enabledand prepared for sensing incoming signals. In the fifth step 850, thedataline and the reference dataline can be pre-charged to the V− voltageof the programmable resistive device cell. In the sixth step 860, thedesired Y-read pass gate can be selected so that the desired bitline iscoupled to an input of the sense amplifier. A conduction path is thusestablished from the bitline to the resistive element in the desiredcell, diode(s) as program selector(s), and the pulldown of the localwordline driver(s) to ground. The same applies for the reference branch.In the step 870, the sense amplifiers can compare the read current withthe reference current to determine a logic output of 0 or 1 to completethe read operations and output the read data in the step 880.

FIG. 21(c) depicts a method 800′ of reading a programmable resistivememory, in a flow chart according to another embodiment. In the firststep 810′, proper power selectors can be selected to provide supplyvoltages for local wordline drivers, sense amplifiers, and othercircuits. In the second step 820′, all Y-write pass gates, i.e. bitlineprogram selectors, can be disabled and all SLs are set to high. In thethird step 830″, desired wordline bar or local wordline bar can beselected so that the MOS devices as read selectors can be turned on. Inthe fourth step 840′, sense amplifiers can be enabled and prepared forsensing incoming signals. In the fifth step 850′, the dataline and thereference dataline can be pre-charged for proper functionality orperformance of the sense amplifiers. In the sixth step 860′, the desiredY-read pass gate can be selected so that the desired bitline can becoupled to an input of the sense amplifier. A conduction path is thusestablished from the bitline to the resistive element in the desiredcell, MOS as read selector(s), and the source line (SL). The sameapplies for the reference branch. In the step 870′, the sense amplifierscan compare the read current with the reference current to determine alogic output of 0 or 1 to complete the read operations and output theread data in the step 880′.

FIG. 21(d) depicts a flow chart of a programming method 900 torandomizing OTP resistance according to one embodiment. In a first step910, select a cell to program. In a second step 920, determine a rangeof the program voltage and/or program time based on data to reach “0” or“1” In a third step 930, select a random number to generate a programvoltage and/or program time within the selected ranges. In a fourth step940, program the selected cell accordingly with the determined programvoltage and program time. In a fifth step 950, check if all cells areprogrammed. If no, go to step 910 to select another cell to program. Ifyes, stop the procedure in step 999.

FIG. 21(e) depicts a flow chart of a programming method 900′ to reach adesirable OTP resistance according to one embodiment. In a first step910′, select a cell to program. In a second step 920′, determine adesired OTP resistance to be reach. In a third step 930′, determine aprogram voltage and program time to reach a desired OTP resistance. In afourth step 940′, program the selected cell with the program voltage andprogram time using at least one pulse. In a step 945′, verify the cellresistance by measuring cell current or logic state. In step 950′, checkif the cell has been verified. If not verified, increment the pulsecount in step 960′ and then and go to 970′. If verified, check if allcells are programmed in step 980′. If all cells have been programmed instep 980′, then the programming method 900′ can stop in step 999′ with asuccess. If all cells have'nt been programmed, go to step 910′ to selectanother cell to program. Following step 960′, in step 970′, check if thepulse count reaches the maximum. If yes, stop in step 998′ with anerror. If no, go to step 930′ to start another pulse to program.

FIG. 22 shows a processor system 700 according to one embodiment. Theprocessor system 700 can include a programmable resistive device 744,such as in a cell array 742, in programmable resistive device (PRD)memory 740, according to one embodiment. The processor system 700 can,for example, pertain to a computer system. The computer system caninclude a Central Process Unit (CPU) 710, which communicate through acommon bus 715 to various memory and peripheral devices such as I/O 720,hard disk drive 730, CDROM 750, memory 740, other memory 760 and powermanagement block 770. Other memory 760 is a conventional memory such asSRAM, DRAM, or flash, typically interfaces to CPU 710 through a memorycontroller. The power management block 770 can be silicon-based orwide-bandgap semiconductor to handle high output voltage or current. CPU710 generally is a microprocessor, a digital signal processor, or otherprogrammable digital logic devices. Programmable resistive memory 740 ispreferably constructed as an integrated circuit, which includes thememory array 742 having at least one programmable resistive device 744.The PRD memory 740 typically interfaces to CPU 710 through a memorycontroller. If desired, the memory 740 may be combined with theprocessor, for example CPU 710, in a single integrated circuit. Thepower management block 770 can also be integrated with PRD memory 740 ina single chip for power-related applications.

The invention can be implemented in a part or all of an integratedcircuit in a Printed Circuit Board (PCB), or in a system. Theprogrammable resistive device can be fuse, anti-fuse, or emergingnonvolatile memory. The fuse can be silicided or non-silicidedpolysilicon fuse, thermally isolated active-region fuse, localinterconnect fuse, metal fuse, contact fuse, via fuse, or fuseconstructed from CMOS gates. The anti-fuse can be a gate-oxide breakdownanti-fuse, contact or via anti-fuse with dielectrics in-between. Theemerging nonvolatile memory can be Magnetic RAM (MRAM), Phase ChangeMemory (PCM), Conductive Bridge RAM (CBRAM), or Resistive RAM (RRAM).Though the program mechanisms are different, their logic states can bedistinguished by different resistance values.

The above description and drawings are only to be consideredillustrative of exemplary embodiments, which achieve the features andadvantages of the present invention. Modifications and substitutions ofspecific process conditions and structures can be made without departingfrom the spirit and scope of the present invention.

The many features and advantages of the present invention are apparentfrom the written description and, thus, it is intended by the appendedclaims to cover all such features and advantages of the invention.Further, since numerous modifications and changes will readily occur tothose skilled in the art, it is not desired to limit the invention tothe exact construction and operation as illustrated and described.Hence, all suitable modifications and equivalents may be resorted to asfalling within the scope of the invention.

What is claimed is:
 1. A programmable resistive memory integrated withwide-bandgap semiconductor devices, comprising: a plurality ofprogrammable resistive cells, at least one of the cells comprising: aprogrammable resistive element (PRE) having one end coupled to a firstsupply voltage line; a selector having at least a first active regionand a second active region, where the first active region having a firsttype of dopant and a second active region having a first or a secondtype of dopant, the first active region providing a first terminal ofthe selector, the second active region providing a second terminal ofthe selector, both the first and second active regions built on asemiconductor material on a semiconductor or insulator substrate, thefirst active region coupled to the PRE and the second active regioncoupled to a second supply voltage line; a gate fabricated on the layerof the semiconductor material with a sandwich of dielectric in between;the gate coupled to a third supply voltage line that can controlconductivity between the first and the second active region; and whereinthe PRE is configured to be programmable by applying voltages to thefirst, second, and/or the third supply voltage lines to thereby changeits logic state.
 2. A programmable resistive memory as recited in claim1, wherein the substrate comprises at least one of silicon, wide bandgapsemiconductor, or sapphire.
 3. A programmable resistive memory asrecited in claim 1, wherein the semiconductor material consists of atleast silicon
 4. A programmable resistive memory as recited in claim 1,wherein the semiconductor material consists of at least one of groupIV-IV, III-V, or II-VI crystalline or compound semiconductor that has abandgap significantly wider than silicon.
 5. A programmable resistivememory as recited in claim 4, wherein the semiconductor materialconsists of at least one of silicon carbide or gallium nitride.
 6. Aprogrammable resistive memory as recited in claim 1, wherein theprogrammable resistive element consists of at least one of aphase-change film in PCRAM or resistive thin film in RRAM.
 7. Aprogrammable resistive memory as recited in claim 1, wherein theprogrammable resistive element consists of at least one of a magnetictunnel junction (MTJ) in MRAM.
 8. A programmable resistive memory asrecited in claim 1, wherein programmable resistive element consists ofat least one of a one-time-programmable (OTP) element.
 9. A programmableresistive memory as recited in claim 8, wherein OTP element consists atleast one of a MOS device to trap charges or to be breakdown in gateoxide to determine the program state.
 10. A programmable resistivememory as recited in claim 8, wherein OTP element comprises a metal,polysilicon, silicided polysilicon, or thermally insulated wide-bandgapsemiconductor.
 11. A programmable resistive memory as recited in claim8, wherein OTP element has a substantially rectangular shape.
 12. Aprogrammable resistive memory as recited in claim 8, wherein OTP elementhas an OTP body between two nearest contacts in two ends, and has alength-to-width ratio of between 2 to 7 in the OTP body.
 13. Aprogrammable resistive memory as recited in claim 8, wherein the OTPelement has more contacts in one end than in the other.
 14. Aprogrammable resistive memory as recited in claim 8, wherein the OTPelement has only one contact in one end.
 15. An electronics system,comprising: a circuit block fabricated by wide-bandgap semiconductor,and a programmable resistive memory operatively connected to the circuitblock, the programmable resistive memory including a plurality ofprogrammable resistive cells, at least one of the cells comprising: aprogrammable resistive element (PRE) having one end coupled to a firstsupply voltage line; a selector having at least a first active regionand a second active region, where the first active region having a firsttype of dopant and a second active region having a first or a secondtype of dopant, the first active region providing a first terminal ofthe selector, the second active region providing a second terminal ofthe selector, both the first and second active regions built on asemiconductor material on a semiconductor or insulator substrate, thefirst active region coupled to the PRE and the second active regioncoupled to a second supply voltage line; and a gate fabricated on thelayer of semiconductor material with a sandwich of dielectric inbetween, the gate coupled to a third supply voltage line to control theconductivity between the first and the second active region; and whereinthe PRE is configured to be programmable by applying voltages to thefirst, second, and/or the third supply voltage lines to thereby changeits logic state.
 16. A programmable resistive memory as recited in claim15, wherein the substrate substantially consists of a silicon,wide-bandgap semiconductor, or sapphire.
 17. A programmable resistivememory as recited in claim 15, wherein the semiconductor materialsubstantially consists of at least one of wide-bandgap semiconductor,such as silicon carbide or gallium nitride.
 18. A programmable resistivememory as recited in claim 15, wherein the programmable resistiveelement includes an OTP element that has at least one metal,polysilicon, silicided polysilicon, or thermally insulated wide-bandgapsemiconductor.
 19. A method for operating a programmable resistivememory on a semiconductor integrated with wide-bandgap semiconductordevices, the method comprises: providing a plurality of programmableresistive cells, at least one of the programmable resistive cellsincludes at least (i) a programmable resistive element having one endcoupled to a first supply voltage line; and (ii) a selector having atleast one first active region and a second active region, where thefirst active region having a first type of dopant and the second regionhaving a first or a second type of dopant, both the first and secondactive regions being fabricated on a semiconductor material on asemiconductor or insulator substrate, the first active region coupled tothe OTP element, and the second active region coupled to a second supplyvoltage line, (iii) a gate fabricated on the semiconductor material witha sandwich of dielectric in between, the gate coupled to a third supplyvoltage to control the conductivity between the first and the secondactive regions; and programming a logic state into at least one of theprogrammable resistive cells by applying voltages to the first, thesecond, and/or the third voltage lines.
 20. A method as recited in claim19, wherein the semiconductor material consists of at least awide-bandgap semiconductor.
 21. A method as recited in claim 20, whereinthe wide-bandgap semiconductor comprises silicon carbide or galliumnitride.